• Journal of Astronomy and Space Sciences
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• v.18 no.2
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• pp.153-162
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• 2001

In this paper, space radiation environment and total ionizing dose(TID) effect have been analyzed for the KOMPSAT-2 operational orbit. It has been revealed that the trapped protons are concentrated in the SAA(South Atlantic Anomaly) area and that the trapped protons and electrons, and solar protons are main factors affecting TID. It turned out that low energy Particles can be effectively blocked by aluminum shielding thickness, but high energy Particles can not be effectively blocked by increasing aluminum shielding thickness. KOMPSAT-2 total radiation dose which is accumulated continuously to spacecraft electronics has been expressed as the function of aluminum thickness. These values ran be used as the criteria for the selection of electronic parts and shielding thinkness of the KOMPSAT-2 structure or electronic box.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.41 no.1
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• pp.79-84
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• 2013

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a PWM-IC (pulse width modulation-integrated circuit) controller, a MOSFET (metal-oxide semiconductor field effect transistor), inductor, capacitor, etc. It is shown that the variation of threshold voltage and the offset voltage in the electrical characteristics of PWM-IC increase by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 4 heavy ions applied for SEL (Single Event Latch-up) make the PWM pulse unstable. Also, the output waveform for the given input in the DC/DC converter is observed by the simulation program with integrated circuit emphasis (SPICE). TID testing on PWM-IC is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the PWM operation is studied at SEL testing after implementation of the controller board.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.11
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• pp.981-987
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• 2014

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of a MOSFET (metal-oxide semiconductor field effect transistor), a PWM-IC (pulse width modulation-integrated circuit) controller, inductor, capacitor, etc. It is shown that the variation of threshold voltage and the breakdown voltage in the electrical characteristics of MOSFET occurs by radiation effects in TID (Total Ionizing Dose) testing at the low energy ${\gamma}$ rays using $^{60}Co$, and 5 heavy ions make the gate of MOSFET broken in SEGR (Single Event Gate Rupture) testing. TID testing on MOSFET is accomplished up to the total dose of 40 krad, and the cross section($cm^2$) versus LET(MeV/mg/$cm^2$) in the MOSFET operation is studied at SEGR testing after implementation of the controller board.

• Journal of the Korean Society of Radiology
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• v.11 no.3
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• pp.101-108
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• 2017

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The advanced DC/DC converter uses a PWM-IC with OP-Amp. (Operational Amplifier) to control a MOSFET (metal-oxide semiconductor field effect transistor), which is a switching component, efficiently. In this paper, it is shown that the electrical characteristics of OP-Amp. are affected by radiations of ${\gamma}$ rays using $^{60}Co$ for TID (Total Ionizing Dose) testing and 5 heavy ions for SEL (Single Event Latch-up) testing. TID testing on OP-Amp. is accomplished up to the total dose of 30 krad, and the cross section($cm^2$) versus LET($MeV/mg/cm^2$) in the OP-Amp. operation is evaluated SEL testing after implementation of the controller board.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.34 no.11
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• pp.84-91
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• 2006

Recently, all the electrical parts for satellite application are required more strong against cosmic rays, because spacecraft's life time and function are depending on the their conditions. Also, a TID effect test was undertaken with units and/or subsystems which are already assembled on the PCB in past time. However, it is very hard to know and analyze that some abnormal states are appeared after launch. Moreover, it is necessary to perform a test of TID effects based on the parts level for preparing preliminary data in cosmic rays. Therefore, this paper presents a test-bed to perform a TID effect test of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) which is a fundamental element for electronics.

• Journal of Astronomy and Space Sciences
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• v.22 no.4
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• pp.537-558
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• 2005

This paper addresses the results of HAUSAT-2 radiation environment and effect analyses, including TID and SEE analyses. Trapped proton and electron, solar proton, galactic cosmic ray models were considered for HAUSAT-2 TID radiation environment analysis. TID was analyzed through total dose-depth curve and the radiation tolerance of TID for HAUSAT-2 components was verified by using DMBP method and sectoring analysis. HAUSAT-2 LET spectrum for heavy ion and proton were also analyzed for SEE investigation. SEE(SEU, SEL) analyses were accomplished for MPC860T2B microprocessor and K6X8008T2B memory. It was estimated that several SEUs may occur without SEL during the HAUSAT-2 mission life(2 years). Software Hamming Code EDAC has been implemented to detect and correct the SEU. In this study, all radiation analyses were conducted by using SPENVIS software.

• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• Journal of IKEEE
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• v.27 no.3
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• pp.303-307
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• 2023

In this paper, the creation of an Electron-Hole Pair due to Total Ionizing Dose (TID) effects inside the oxide of a Buried Channel Array Transistor (BCAT) device is induced, resulting in an increase in leakage current and threshold due to an increase in hole trap charge at the oxide interface. By comparing and simulating changes in voltage with the previously proposed Partial Isolation Buried Channel Array Transistor (Pi-BCAT) structure, the characteristics in leakage current and threshold voltage changed regardless of the increased oxide area of the Pi-BCAT device, compared to the asymmetrically doped BCAT structure. It shows superiority.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.71-75
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• 2004

This paper proposes a new bandgap reference (BGR) circuit which takes advantage of a cascode current mirror biasing to reduce the V$\_$ref/ variation, and sizing technique, which utilizes two related ratio numbers k and N, to reduce the PNP BJT area. The proposed BGR is designed and fabricated on a test chip with a goal to provide a reference voltage to the 10 bit A/D(4-4-4 pipeline architecture) converter of the CMOS Active Pixel Sensor (APS) imager to be used in X-ray imaging. The basic temperature variation effect on V$\_$ref/ of the BGR has a maximum delta of 6 mV over the temperature range of 25$^{\circ}C$ to 70$^{\circ}C$. To verify that the proposed BGR has radiation hardness for the X-ray imaging application, total ionization dose (TID) effect under Co-60 exposure conditions has been evaluated. The measured V$\_$ref/ variation under the radiation condition has a maximum delta of 33 mV over the range of 0 krad to 100 krad. For the given voltage, temperature, and radiation, the BGR has been satisfied well within the requirement of the target 10 bit A/D converter.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.189-194
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• 2024

This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 ㎛ process and verified through a test up to 230 kGy (SiO₂) at a rate of 10.46 kGy (SiO₂)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.