Test-bed of Total Ionizing Dose (TID) Test by Cosmic Rays for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) |
Sin, Gu-Hwan
(한국과학기술원)
Yu, Gwang-Seon (한국과학기술원) Gang, Gyeong-In (한국과학기술원) Kim, Hyeong-Myeong (한국과학기술원) Jeong, Seong-In (한국과학기술원) |
1 | http://satrec.kaist.ac.kr/data_new/data_ 3.htm |
2 | 채종원 ' 우주방사선 해석 기술 동향 -TID 해석을 중심으로' 항공우주산업기술동향, 제 2권 2호 2004, pp. 84-94 |
3 | 윤의식 '한국과학기술원 물리전자 EE561 강의 자료 8장' 2003, pp. 8-1-8-29 |
4 | International Rectifier Data Sheet, 'IRF9Z34' |
5 | J.V. Osborn, RC. Lacoe, D.C. Mayer, and G. Yabiku, ' Total Dose Hardness of Three Commercial CMOS Microelectronics Foundries' , IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 45, NO.3, 1998, pp. 1458-1463 DOI ScienceOn |
6 | Stefano Bertazzoni, Domenico Di Giovenale, Marcello Salmeri, Lorenzo Mongiardo, Marco Florean, Adelio Salsano, Jeffert Wyss, and Riccardo Rando, ' TID Test for SDRAM Based IEEM Calibration System' , Nuclear Science Symposium Conference Record 2004 IEEE, Vol. 2, 2004, pp. 752-755 |
7 | T. R. Oldham, and F. B. McLean, ' Total Inoizing Dose Effects in MOS Oxides and Devices' , IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 50, NO.3, 2003, pp. 483-499 DOI ScienceOn |