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http://dx.doi.org/10.5139/JKSAS.2006.34.11.084

Test-bed of Total Ionizing Dose (TID) Test by Cosmic Rays for Metal Oxide Semiconductor Field Effect Transistor (MOSFET)  

Sin, Gu-Hwan (한국과학기술원)
Yu, Gwang-Seon (한국과학기술원)
Gang, Gyeong-In (한국과학기술원)
Kim, Hyeong-Myeong (한국과학기술원)
Jeong, Seong-In (한국과학기술원)
Publication Information
Journal of the Korean Society for Aeronautical & Space Sciences / v.34, no.11, 2006 , pp. 84-91 More about this Journal
Abstract
Recently, all the electrical parts for satellite application are required more strong against cosmic rays, because spacecraft's life time and function are depending on the their conditions. Also, a TID effect test was undertaken with units and/or subsystems which are already assembled on the PCB in past time. However, it is very hard to know and analyze that some abnormal states are appeared after launch. Moreover, it is necessary to perform a test of TID effects based on the parts level for preparing preliminary data in cosmic rays. Therefore, this paper presents a test-bed to perform a TID effect test of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) which is a fundamental element for electronics.
Keywords
MOSFET; Total Ionizing Dose; Proton Irradiation;
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  • Reference
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