• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.214-218
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• 2020

In this study, Mg_xZn_1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg_0.3Zn_0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg²⁺/Zn²⁺. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg_0.3Zn_0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

• Restorative Dentistry and Endodontics
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• v.32 no.4
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• pp.313-326
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• 2007

The purpose of this study was to prove that an intermediate resin layer (IRL) oan increase the bond strength to dentin by reducing the permeability of single-step adhesives. Flat dentin surfaces were created on buccal and lingual side of freshly extracted third molar using a low-speed diamond saw under copious water flow. Approximately 2.0 mm thick axially sectioned dentin slice was abraded with wet #600 SiC paper. Three single-step self-etch adhesives; Adper Prompt L-Pop (3M ESPE, St Paul, MN, USA), One-Up Bond F (Tokuyama Corp, Tokyo, Japan) and Xeno III (Dentsply, Konstanz, Germany) were used in this study. Each adhesive groups were again subdivided into ten groups by; whether IRL was used or not; whether adhesives were cured with light before application or IRL or not; the mode of composite application. The results of this study were as follows; 1. Bond strength of single-step adhesives increased by an additional coating of intermediate resin layer, and this increasement was statistically signigicant when self-cured composite was used (p < 0.001). 2. When using IRL, there were no difference on bond strengths regardless the curing procedure of single-step adhesives. 3. There were no significant difference on bond strengths between usage of AB2 or SM as an IRL. 4. The thickness of Hybrid layer was correlated with the acidity of adhesive used, and the nanoleakage represented by silver deposits and grains was examined within hybrid and adhesive layer in most of single-step adhesives. 5. Neither thickness of hybrid layer nor nanoleakage were related to bond strength.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.107-107
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• 2000

최근 반도체 소자의 고집적화 및 대용량화의 경향에 다라 MOSFET 소자 제작에 이동되는 게이트 산화막의 두께가 수 nm 정도까지 점점 얇아지는 추세이고 Giga-DRAM급 차세대 UNSI소자를 제작하기 위해 5nm이하의 게이트 절연막이 요구된다. 이런 절연막의 두께감소는 게이트 정전용량을 증가시켜 트랜지스터의 속도를 빠르게 하며, 동시에 저전압동작을 가능하게 하기 때문에 게이트 산화막의 두께는 MOS공정세대가 진행되어감에 따라 계속 감소할 것이다. 따라서 절연막 두께는 소자의 동작 특성을 결정하는 중요한 요소이므로 이에 대한 정확한 평가 방법의 확보는 공정 control 측면에서 필수적이다. 그러나, 절연막의 두께가 작아지면서 게이트 산화막과 crystalline siliconrksm이 계면효과가 박막의 두께에 심각한 영향을 주기 때문에 정확한 두께 계측이 어렵고 계측방법에 따라서 두께 계측의 차이가 난다. 따라서 차세대 반도체 소자의 개발 및 양산 체계를 확립하기 위해서는 산화막의 두께가 10nm보다 작은 1nm-5nm 수준의 박막 시료에 대한 두께 계측 방법이 확립이 되어야 한다. 따라서, 본 연구에서는 습식 산화 공정으로 제작된 3nm-7nm 의 게이트 절연막을 현재까지 알려진 다양한 두께 평가방법을 비교 연구하였다. 절연막을 MEIS (Medim Energy Ion Scattering), 0.015nm의 고감도를 가지는 SE (Spectroscopic Ellipsometry), XPS, 고분해능 전자현미경 (TEM)을 이용하여 측정 비교하였다. 또한 polysilicon gate를 가지는 MOS capacitor를 제작하여 소자의 Capacitance-Voltage 및 Current-Voltage를 측정하여 절연막 두께를 계산하여 가장 좋은 두께 계측 방법을 찾고자 한다.다. 마이크로스트립 링 공진기는 링의 원주길이가 전자기파 파장길이의 정수배가 되면 공진이 일어나는 구조이다. Fused quartz를 기판으로 하여 증착압력을 변수로 하여 TiO2 박막을 증착하였다. 그리고 그 위에 은 (silver)을 사용하여 링 패턴을 형성하였다. 이와 같이 공진기를 제작하여 network analyzer (HP 8510C)로 마이크로파 대역에서의 공진특서을 측정하였다. 공진특성으로부터 전체 품질계수와 유효유전율, 그리고 TiO2 박막의 품질계수를 얻어내었다. 측정결과 rutile에서 anatase로 박막의 상이 변할수록 유전율은 감소하고 유전손실은 증가하는 결과를 나타내었다.의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.406-406
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• 2010

일반적으로, 나노스케일의 MOS 소자에서는 게이트 절연체 두께가 감소함에 따라 tunneling effect의 증가로 인해 PID (plasma induced damage)로 인한 소자 특성 저하 현상을 감소하는 추세로 알려져 있다. 하지만 요즘 많이 사용되고 있는 high-k 게이트 절연체의 경우에는 오히려 더 많은 charge들이 trapping 되면서 PID가 오히려 더 심각해지는 현상이 나타나고 있다. 이러한 high-k 게이트 식각 시 현재는 주로 Hf-based wet etch나 dry etch가 사용되고 있지만 gate edge 영역에서 high-k 게이트 절연체의 undercut 현상이나 PID에 의한 소자특성 저하가 보고되고 있다. 본 연구에서는 이에 차세대 MOS 소자의 gate stack 구조중 issue화 되고 있는 metal gate 층과 gate dielectric 층의 식각공정에 각각 중성빔 식각과 중성빔 원자층 식각을 적용하여 전기적 손상 없이 원자레벨의 정확한 식각 조절을 해줄 수 있는 새로운 two step 식각 공정에 대한 연구를 진행하였다. 먼저 TiN metal gate 층의 식각을 위해 HBr과 $Cl_2$ 혼합가스를 사용한 중성빔 식각기술을 적용하여 100 eV 이하의 에너지 조건에서 하부층인 $HfO_2$와 거의 무한대의 식각 선택비를 얻었다. 하지만 100 eV 조건에서는 낮은 에너지에 의한 빔 스케터링으로 실제 패턴 식각시 etch foot이 발생되는 현상이 관찰되었으며, 이를 해결하기 위하여 먼저 높은 에너지로 식각을 진행하고 $HfO_2$와의 계면 근처에서 100 eV로 식각을 해주는 two step 방법을 사용하였다. 그 결과 anistropic 하고 하부층에 etch stop된 식각 형상을 관찰할 수 있었다. 다음으로 3.5nm의 매우 얇은 $HfO_2$ gate dielectric 층의 정확한 식각 깊이 조절을 위해 $BCl_3$와 Ar 가스를 이용한 중성빔 원자층 식각기술을 적용하여 $1.2\;{\AA}$/cycle의 단일막 식각 조건을 확립하고 약 30 cycle 공정시 3.5nm 두께의 $HfO_2$ 층이 완벽히 제거됨을 관찰할 수 있었다. 뿐만 아니라, vertical 한 식각 형상 및 향상된 표면 roughness를 transmission electron microscope(TEM)과 atomic force microscope (AFM)으로 관찰할 수 있었다. 이러한 중성빔 식각과 중성빔 원자층 식각기술이 결합된 새로운 gate recess 공정을 실제 MOSFET 소자에 적용하여 기존 식각 방법으로 제작된 소자 결과를 비교해 본 결과 gate leakage current가 약 one order 정도 개선되었음을 확인할 수 있었다.

• Parasites, Hosts and Diseases
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• v.29 no.4
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• pp.315-324
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• 1991

Each of SPF chicken(Hi-Line strain, 2-day-old males) was inoculated with 2.5 or $5\times10^4$ oocysts by stomach tube. The oocyst was the medium type of Cryptosporidium previously isolated from Korean chicken origin, and passed in 2-day-old SPF chicken. The patterns of oocyst discharge were monitored daily, and in order to observe the ultrastructure of the developmental stages, the bursa of Fabricius of the chicken was examined by transmission electron microscopy (TEM) on the 12th day postinoculation. The prepatent period for 8 chicken was 5.9 days postinoculation on the average, and the patent period was 12.9 days. The number of oocysts discharged per day for the chicken was reached peak on day 12 postinoculation on the average. A large number of oocysts was found in fecal samples obtained from inoculated chicken on days 8~14 postinoculation. The ultrastructural feature of almost every developmental stage of the medium type from chicken was very similar to that of Cryptosporidium previously isolated from mammalia including human and birds except for the attachment site of C. tsuris to the mucus cell from mammalia, but dimension of the oocysts from fecal samples of the medium type was different from those of C. meleagridis and mammalia origin. The above results reveal that the medium type of Cryptosporidium of Korean chicken origin is identified as Cryptosporidium baileyi.

• Biomaterials Research
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• v.22 no.4
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• pp.328-336
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• 2018

Background: Biogenic fabrication of silver nanoparticles from naturally occurring biomaterials provides an alternative, eco-friendly and cost-effective means of obtaining nanoparticles. It is a favourite pursuit of all scientists and has gained popularity because it prevents the environment from pollution. Our main objective to take up this project is to fabricate silver nanoparticles from lichen, Usnea longissima and explore their properties. In the present study, we report a benign method of biosynthesis of silver nanoparticles from aqueous-ethanolic extract of Usnea longissima and their characterization by ultraviolet-visible (UV-vis), Fourier transform infrared (FTIR) spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM) analyses. Silver nanoparticles thus obtained were tested for antimicrobial activity against gram positive bacteria and gram negative bacteria. Results: Formation of silver nanoparticles was confirmed by the appearance of an absorption band at 400 nm in the UV-vis spectrum of the colloidal solution containing both the nanoparticles and U. longissima extract. Poly(ethylene glycol) coated silver nanoparticles showed additional absorption peaks at 424 and 450 nm. FTIR spectrum showed the involvement of amines, usnic acids, phenols, aldehydes and ketones in the reduction of silver ions to silver nanoparticles. Morphological studies showed three types of nanoparticles with an abundance of spherical shaped silver nanoparticles of 9.40-11.23 nm. Their average hydrodynamic diameter is 437.1 nm. Results of in vitro antibacterial activity of silver nanoparticles against Staphylococcus aureus, Streptococcus mutans, Streptococcus pyrogenes, Streptococcus viridans, Corynebacterium xerosis, Corynebacterium diphtheriae (gram positive bacteria) and Escherichia coli, Klebsiella pneuomoniae and Pseudomonas aeruginosa (gram negative bacteria) showed that it was effective against tested bacterial strains. However, S. mutans, C. diphtheriae and P. aeruginosa were resistant to silver nanoparticles. Conclusion: Lichens are rarely exploited for the fabrication of silver nanoparticles. In the present work the lichen acts as reducing as well as capping agent. They can therefore, be used to synthesize metal nanoparticles and their size may be controlled by monitoring the concentration of extract and metal ions. Since they are antibacterial they may be used for the treatment of bacterial infections in man and animal. They can also be used in purification of water, in soaps and medicine. Their sustained release may be achieved by coating them with a suitable polymer. Silver nanoparticles fabricated from edible U. longissima are free from toxic chemicals and therefore they can be safely used in medicine and medical devices. These silver nanoparticles were stable for weeks therefore they can be stored for longer duration of time without decomposition.

• Journal of Hydrogen and New Energy
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• v.29 no.6
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• pp.559-569
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• 2018

Catalytic supports made of carbon have many advantages, such as high coking resistance, tailorable pore and surface structures, and ease of recycling of waste catalysts. Moreover, they do not require pre-reduction. In this study, ash-free coal (AFC) was obtained by the thermal extraction of carbonaceous components from raw coal and its performance as a carbon catalytic support was compared with that of well-known activated carbon (AC). Nickel was dispersed on the carbon supports and the resulting catalysts were applied to the steam reforming of toluene (SRT), a model compound of biomass tar. Interestingly, nickel catalysts dispersed on AFC, which has a very small surface area (${\sim}0.13m^2/g$), showed higher activity than those dispersed on AC, which has a large surface area ($1,173A/cm^2$). X-ray diffraction (XRD) analysis showed that the particle size of nickel deposited on AFC was smaller than that deposited on AC, with the average values on AFC ${\approx}11nm$ and on AC ${\approx}23nm$. This proved that heteroatomic functional groups in AFC, such as carboxyls, can provide ion-exchange or adsorption sites for the nano-scale dispersion of nickel. In addition, the pore structure, surface morphology, chemical composition, and chemical state of the prepared catalysts were analyzed using Brunauer-Emmett-Taylor (BET) analysis, transmission electron microscopy (TEM), scanning electron microscopy (SEM), x-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, and temperature-programmed reduction (TPR).

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.