• 한국결정성장학회지
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• 제7권4호
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• pp.548-554
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• 1997

수직 Bridgman방법으로 $Mg_{0.18}Zn_{0.84}$Te:Co(Co:0.01 mole%)단결정을 성장시켰다. 성장된 단결정의 결정구조와 광흡수 spectra를 연구하였다. X 선 회절무늬로부터 성장된 단결정의 구조는 cubic구조이었고 격자상수 a=6.1422 $\AA$이었다. 광흡수 측정결과 $Co^{2+}$ 이온에 기인된 $A-band:^4A_2(^4F){\to}^4T_2(^4F),\; B-band:^4A_2(^4F){\to}^4T_1(^4F), C- band:^4A_2(^4F){\to}^4T_1(^4P)$의 intracenter transition과, 흡수단 근처의 charge transfer에 의한 photoionization transition에 관계된 D-band를 550-770 nm의 파장영역에서 관측하였다. 또한 결정장 이론에 의해 결정매개변수(Dq)와 Racah parameter(B)를 결정하였다.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.497-501
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• 2010

Nano structure $Bi_2Te_3$ films were deposited on (100) GaAs substrates using a modified MOCVD system and the effect of growth parameters on the structural properties were investigated. Different from conventional MOCVD systems, our reactor consist of pressure control unit and two heating zones ; one for formation of nano-sized particles and the other for the growth of nano particles on substrates. By using this instrument we successfully grow $Bi_2Te_3$ films with nano-grain size. The film grown at high reactor pressure has large grain size. On the contrast, the grain size decreases with a decrease in pressure of the reactor. Here, we introduce new growth methods of nano-grain structured $Bi_2Te_3$ films for high thermoelectric figure of merit.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1135-1140
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• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.425-425
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• 2008

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

• 한국진공학회지
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• 제9권4호
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• pp.406-410
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• 2000

Hot-wall epitaxy 방법으로 GaAs (100) 기판 위에 9 $\mu\textrm{m}$의 CdTe (111)을 완충층으로 성장하고 그 위에 in-situ로 $Hg_{1-x}Cd_x$/Te (MCT)박막을 성장하였다. 성장된 MCT박막의 2결정 x-선 요동곡선의 반치폭 값은 125 arcsec이었으며 표면 형상의 roughness는 10 nm의 작고 깨끗한 면을 나타내었다. 성장된 MCT 박막에 대한 광전류 측정으로부터 최대 peak 파장과 cut off 파장은 각각 1.1050 $\mu\textrm{m}$ (1.1220 eV)와 1.2632 $\mu\textrm{m}$ (0.9815 eV)임을 알았다 이 peak 파장은 광전도체의 intrinsic transition에 기인한 band gap에 대응하는 봉우리이다. 이로부터 MCT 박막은 1.0 $\mu\textrm{m}$에서 1.6 $\mu\textrm{m}$의 근적외선 파장 영역을 감지할 수 있는 광전도체용 검출기로 쓰일 수 있음을 알았다.

• 대한화학회지
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• 제28권2호
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• pp.79-85
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• 1984

부피 퍼센트 95%의 에탄올-물 혼합용매내에서 2,4,6,N-테트라메틸 피리디늄요오드(TeMPI)의 이온회합 상수(K)를 수정한 자외선분광 및 전기 전도도 혼용법으로 온도범위 $25^{\circ}C{\sim} 50^{\circ}C$, 압력범위 1 ${\sim}$ 2,000 bars에서 결정하였다. K값은 압력이 증가함에 따라서 증가하였고 $40^{\circ}C$에서 최대값을 나타내었다. 부분몰부피변화(${\Delta}V$)는 비교적 작은 음의 값이었으며 ${\Delta}V$의 절대값은 $40^{\circ}C$에서 최소값을 보여주었다. TeMPI의 이온 크기 변수(a)는 $40^{\circ}C$에서 최대값을 가졌다. ${\Delta}H^{\circ}$값은 40, $25^{\circ}C$ 그리고 $50^{\circ}C$에서 각각 영, 음수 및 양수로 나타났으며 엔트로피(${\Delta}S^{\circ}$)와 자유에너지(${\Delta}G^{\circ}$)와 같은 다른 열역학변수 값도 계산하였다. 이와 같은 실험결과로부터 우리들은 TeMPI가 압력증가에 대하여 안정화되고, $40^{\circ}C$까지는 온도증가에 따라서도 안정화됨을 보여주었다. 그러나 $40^{circ}C$에서는 TeMPI 두 분자에 있는 8개 메틸기의 분자간 소수성 상호작용으로 인하여 약한 이량체를 형성하고 $50^{\circ}C$이상에서는 다시 열적으로 분해된다는 결론을 얻게 되었다.

• 대한방사선기술학회지:방사선기술과학
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• 제37권4호
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• pp.253-259
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• 2014

Traveling heater method(THM) 방법을 이용하여 성장시킨 CdZnTe(CZT) 단결정 방사선 소자에 대한 고에너지(high energy) 감마선 에너지 분해능(energy resolution)을 평가하고자 $6{\times}6{\times}12mm^3$ 크기의 CZT 소자를 제작하였다. 두꺼운 방사선 소자의 경우, 전자에 비해 상대적으로 이동속도가 느린 정공(hole)으로 인해 발생하는 hole-tailing 효과가 심화되어 고에너지 영역의 에너지 분해능이 저하되는 현상이 발생한다. 전자(electron)와 정공(hole)의 두 개의 전하 운반자(charge carrier) 중에서 하나의 전하 운반자를 선택적으로 수집하여 에너지 분해능을 높이는 것이 가능하다. 가상 Frisch-그리드(virtual Frisch-grid) 소자는 소자 내부의 가중 퍼텐셜(weighting potential)을 조절하여 전자에 의한 유도전류(induced current)만을 선택적으로 이용하는 방법으로써 제작 과정과 적용이 용이하다. 본 연구에서는 THM 방법으로 성장한 큰 부피의 CZT 방사선 소자의 특성과 가상 Frisch-그리드의 효용성을 평가하였다. 가상 Frisch-그리드의 적절한 위치와 너비는 Maxwell ver.14(ANSYS, 미국)를 이용하여 모의실험으로 정하였다. $^{137}Cs$ 동위원소를 이용한 펄스 높이 스펙트럼(pulse height spectrum) 측정에서 가상 Frisch-그리드를 적용했을 때 662 keV 피크에 대해 2.2%의 에너지 분해능을 확인할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.7-11
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• 2006

The changes of the electrical conductivity in chalcogenide amorphous semiconductors, $Ge_{1}Se_{1}Te_{2}$, have been studied. A phase change random access memory (PRAM) device without an access transistor is successfully fabricated with the $Ge_{1}Se_{1}Te_{2}$-phase-change resistor, which has much higher electrical resistivity than $Ge_{2}Sb_{2}Te_{5}$ and its electric resistivity can be varied by the factor of $10^5$ times, relating with the degree of crystallization. 100 nm thick $Ge_{1}Se_{1}Te_{2}$ thin film was formed by vacuum deposition at $1.5{\times}10^{-5}$ Torr. The static mode switching (DC test) is tested for the $100\;{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device. In the first sweep, the amorphous $Ge_{1}Se_{1}Te_{2}$ thin film showed a high resistance state at low voltage region. However, when it reached to the threshold voltage, $V_{th}$, the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the $20{\mu}m-sized$ $Ge_{1}Se_{1}Te_{2}$ PRAM device showed that the reset of device was done with a 80 ns-8.6 V pulse and the set of device was done with a 200 ns-4.3 V pulse.

• 전자공학회논문지A
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• 제32A권2호
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• pp.89-95
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• 1995

The structure of boron ion-implanted pn junctio in the vacancy-doped p-type HgCdTe was investigated with the differential Hall measurement. The as-implanted junction showed the electron concentration as high as 1${\times}10^{18}/cm^{3}$ and the junction depth of 0.6.mu.m. When the HgCdTe junction was heated in oven, the electron concentration near the junction decreased and the junction depth increased as the annealing temperature and time increased. The junction structure after the thermal annealing was n$^{+}$/n$^{-}$/p. For the 200.deg. C 20min annealed sample, the electron mobility was 10$^{4}cm^{2}/V{\cdot}$s near the surface(n$^{+}$), and was larger thatn 10$^{5}cm^{2}/V{\cdot}$s near the junction(n$^{+}$). The junction formation mechanism is conjectured as follows. When HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms near the surface. The displaced Hg vacancies diffuse in easily by the thernal treatment and a fill the Hg vacancies in the p-HgCdTe substrate. With the Hg vacancies filled completely, the GfCdTe substrate becomes n-type because of the residual n-type impurity which was added during the wafer growing. Therefore, the n$^{+}$/n$^{-}$/p regions are formed by crystal defects, residual impurities, and Hg vacancies, respectively.

• Molecules and Cells
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• 제41권3호
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• pp.198-206
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• 2018

Aortic dissection (AD) is a catastrophic disease with high mortality and morbidity, characterized with fragmentation of elastin and loss of smooth muscle cells. Although AD has been largely attributable to polymorphisms defect in the elastin-coding gene, tropoelastin (TE), other undermined factors also appear to play roles in AD onset. Here, we investigated the effects of post-transcriptional control of TE by microRNAs (miRNAs) on elastin levels in aortic smooth muscle cells (ASMC). We found that miR-144-3p is a miRNA that targets TE mRNA in both human and mouse. Bioinformatics analyses and dual luciferase reporter assay showed that miR-144-3p inhibited protein translation of TE, through binding to the 3'-UTR of the TE mRNA. Interestingly, higher miR-144-3p levels and lower TE were detected in the ASMC obtained from AD patients, compared to those from non-AD controls. In a mouse model for human AD, infusion of adeno-associated viruses (serotype 6) carrying antisense for miR-144-3p (asmiR-144-3p) under CAG promoter significantly reduced the incidence and severity of AD, seemingly through enhancement of TE levels in ASMC. Thus, our data suggest an essential role of miR-144-3p on the pathogenesis of AD.