Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 32A Issue 2
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- Pages.89-95
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- 1995
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- 1016-135X(pISSN)
HgCdTe Junction Characteristics after the Junction Annealing Process
열처리 조건에 따른 HgCdTe의 접합 특성
- Jeong, Hi-Chan (Dept. of Elec. Eng., Korea Advanced Institute of Science and Technology) ;
- Kim, Kwan (Dept. of Elec. Eng., Korea Advanced Institute of Science and Technology) ;
-
Lee, Hee-Chul
(Dept. of Elec. Eng., Korea Advanced Institute of Science and Technology) ;
- Kim, Hong-Kook (Agency for Defence Development) ;
- Kim, Jae-Mook (Agency for Defence Development)
- 정희찬 (한국과학기술원 전기 및 전자공학과) ;
- 김관 (한국과학기술원 전기 및 전자공학과) ;
-
이희철
(한국과학기술원 전기 및 전자공학과) ;
- 김홍국 (국방과학연구소) ;
- 김재묵 (국방과학연구소)
- Published : 1995.02.01
Abstract
The structure of boron ion-implanted pn junctio in the vacancy-doped p-type HgCdTe was investigated with the differential Hall measurement. The as-implanted junction showed the electron concentration as high as 1
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