Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.425-425
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- 2008
MOCVD를 이용한 $BiSbTe_3$ 박막성장 및 열전소자 제작
- Kwon, Sung-Do (Department of Electrical Engineering, Korea University) ;
- Yoon, Seok-Jin (Thin Film Material Research Center, Korea Institute of Science and Technology) ;
- Ju, Byeong-Kwon (Department of Electrical Engineering, Korea University) ;
- Kim, Jin-Sang (Thin Film Material Research Center, Korea Institute of Science and Technology)
- Published : 2008.11.06
Abstract
Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type