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Effect of Output-conductance on Current-gain Cut-off frequency in In0.8Ga0.2As High-Electron-mobility Transistors (In0.8Ga0.2As HEMT 소자에서 Output-conductance가 차단 주파수에 미치는 영향에 대한 연구)

  • Rho, Tae-Beom;Kim, Dae-Hyun
    • Journal of Sensor Science and Technology
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    • v.29 no.5
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    • pp.324-327
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    • 2020
  • The impact of output conductance (go) on the short-circuit current-gain cut-off frequency (fT) in In0.8Ga0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of fT in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for fT in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with Lg from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (goi) on fT was negligible. This was because, from the simplified SSM perspective, three model parameters, such as gm_ext, Cgs_ext and Cgd_ext, were weakly dependent on goi. However, in short-channel devices, goi was found to play a significant role in degrading fT as Lg was scaled down. The increase in goi in short-channel devices caused a considerable reduction in gm_ext and an overall increase in the total extrinsic gate capacitance, yielding a decrease in fT with goi. Finally, the results were used to infer how fT is influenced by goi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down Lg.

SPLITTING TYPE, GLOBAL SECTIONS AND CHERN CLASSES FOR TORSION FREE SHEAVES ON PN

  • Bertone, Cristina;Roggero, Margherita
    • Journal of the Korean Mathematical Society
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    • v.47 no.6
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    • pp.1147-1165
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    • 2010
  • In this paper we compare a torsion free sheaf F on $P^N$ and the free vector bundle $\oplus^n_{i=1}O_{P^N}(b_i)$ having same rank and splitting type. We show that the first one has always "less" global sections, while it has a higher second Chern class. In both cases bounds for the difference are found in terms of the maximal free subsheaves of F. As a consequence we obtain a direct, easy and more general proof of the "Horrocks' splitting criterion", also holding for torsion free sheaves, and lower bounds for the Chern classes $c_i$(F(t)) of twists of F, only depending on some numerical invariants of F. Especially, we prove for rank n torsion free sheaves on $P^N$, whose splitting type has no gap (i.e., $b_i{\geq}b_{i+1}{\geq}b_i-1$ 1 for every i = 1,$\ldots$,n-1), the following formula for the discriminant: $$\Delta(F):=2_{nc_2}-(n-1)c^2_1\geq-\frac{1}{12}n^2(n^2-1)$$. Finally in the case of rank n reflexive sheaves we obtain polynomial upper bounds for the absolute value of the higher Chern classes $c_3$(F(t)),$\ldots$,$c_n$(F(t)) for the dimension of the cohomology modules $H^iF(t)$ and for the Castelnuovo-Mumford regularity of F; these polynomial bounds only depend only on $c_1(F)$, $c_2(F)$, the splitting type of F and t.

Ovarian Follicular Dynamics, Ovarian Follicular Growth, Oocyte Yield, In vitro Embryo Production and Repeated Oocyte Pick Up in Thai Native Heifers Undergoing Superstimulation

  • Chasombat, J.;Nagai, T.;Parnpai, R.;Vongpralub, T.
    • Asian-Australasian Journal of Animal Sciences
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    • v.26 no.4
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    • pp.488-500
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    • 2013
  • The objective of this study was to compare the effectiveness of the protocols for superstimulation of follicular growth in Thai native heifers. Heifers (n = 20) were randomly divided into four groups of five heifers/group. Heifers were given a single dose by i.m. administration of 100 mg Follicle Stimulating Hormone dissolved in polyvinylpyrrolidone (FSHp) at 24 h. Ovum pick up (OPU) occurred at 72 h ($F_{24}O_{72}$ protocol; Group 1) or 96 h ($F_{24}O_{96}$ protocol; Group 2), and at 36 h and OPU at 72 h ($F_{36}O_{72}$ protocol; Group 3) or 96 h ($F_{36}O_{96}$ protocol; Group 4) after follicular ablation. The dynamics of ovarian follicular growth were monitored by twice-daily ultrasonographic examinations. Blood sample collections were performed every 12 h after initiation of treatment for assessment of FSH, E2 and P4 profiles. All heifers were subjected to eight repeated sequential sessions of OPU. The follicular deviation commenced $24{\pm}5.32$ h after follicular ablation in all groups. The circulatory FSH surged quickly from 24 to 36 h (>0.8 ng/ml) after follicular ablation and circulatory estrogen levels steadily increased from 36 h until OPU in all groups. At the end of the OPU sessions, the mean number of aspirated follicles/heifer/session in $F_{36}O_{72}$ protocol (Group 3) and $F_{36}O_{96}$ protocol (Group 4) were higher than in the two other groups (p<0.05). The number of cumulus-oocyte complexes (COCs), cleaved and day 8 blastocysts rates in the $F_{36}O_{72}$ protocol (Group 3) were higher than in the other groups (p<0.05). It can be concluded that a single dose i.m. administration of 100 mg FSHp at 36 h and OPU at 72 h after follicular ablation ($F_{36}O_{72}$ protocol; Group 3) was the most effective protocol for superstimulation of follicular growth for repeated OPU and subsequent in vitro embryo production in Thai native heifers.

Crystal Structure of 1-Cyclopropyl-7-(2,7-diazabicyclo[3.3.0]oct-4-en-7-yl)-6-fluoro-8-methoxy-4-oxo-1,4-dihydroquinoline-3-carboxylic acid (HCI salt) (1-Cyclopropyl-7-(2,7-diazabicyclo[3.3.0]oct-4-en-7-yl)-6-fluoro-8-methoxy-4-oxo-1,4-dihydroquinoline-3-carboxylic acid 염산염의 결정구조)

  • 김문집;신준철
    • Korean Journal of Crystallography
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    • v.6 no.2
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    • pp.103-110
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    • 1995
  • The crystal structure of 1-Cyclopropyl-7-(2,7-diazabicyclo[3.3.0]oct-4-en-7-yl)-6-fluoro-8-methoxy-4-oxo-1,4-dihydroquinoline-3-carboxylic acid (HCI salt) has been determined from single crystal x-ray diffraction study ; C20H21N3O4FCl, Monoclinic, C2/c, a=28.349(2)Å, b=11.941(2)Å, c=12.806(2)Å, β=96.428(9)°, V=4307.8Å3, T=296(2)K, Z=8, CuKα(λ=1.5418Å). The molecular structure was solved by direct method and refined by full-matrix least squares to a final R=4.96% for 2258 unique observed F0>4σ(F0) reflections and 293 parameters. The conformation of the molecule is stabilized by an intramolecular O(28)-H(28)…O(25) [2.517(4)Å, 156.7(447)°] hydrogen bond. Intermoleculars distances correspond to van der Waals contacts.

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ON THE COMPACT METHODS FORABSTRACT NONLINEAR FUNCTIONAL EVOLUTION EQUATIONS

  • Park, Jong-Yeoul;Jung, Jong-Soo
    • Communications of the Korean Mathematical Society
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    • v.9 no.3
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    • pp.547-564
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    • 1994
  • Let X be a real Banach space. We consider the existence of solutions of the abstract nonlinear functional evolution equation : $$ (E) \frac{du(t)}{dt} + A(t)u(t) + F(u)(t) \ni h(t), $$ $$ u(s) = x_o \in D(A(s)), 0 \leq s \leq t \leq T, $$ where u : $[s, T] \to x$ is an unknown function, ${A(t) : 0 \leq t \leq T}$ is a given family of nonlinear (possibly multivalued) operators in X, and $F : C([s, t];X) \to L^{\infty}([s, X];X)$ and $h : [s, T] \to X$ are given functions.

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The Characteristics of Ti-O Buffer Layered Ta/Ta2O5Capacitors on the Al2O3 substrate (Al2O3 기판위에 형성된 Ti-O 완충층을 가진 Ta/Ta2O5커패시티의 특성)

  • 김현주;송재성;김인성;김상수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.9
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    • pp.807-811
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    • 2003
  • We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

LIPSCHITZ STABILITY CRITERIA FOR A GENERALIZED DELAYED KOLMOGOROV MODEL

  • El-Sheikh, M.M.A.
    • Journal of applied mathematics & informatics
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    • v.10 no.1_2
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    • pp.75-81
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    • 2002
  • Lipschitz stability and Lipschitz ø$_{o}$ - equistability of the functional differential equation x'= B(x)f(t, x, $x_{t}$), $x_{to}$ =$\theta$$_{o}$ are discussed. Sufficient conditions are given using the comparison with the corresponding scalar equation.ion.n.

$NO_x$ Sensing Characteristic of $TiO_2$ Thin Film Deposited by R.F Magnetron Sputtering (R.F 마그네트론 스퍼트링으로 작성된 $TiO_2$박막의 $NO_x$ 감지 특성)

  • 고희석;박재윤;박상현
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.12
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    • pp.567-572
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    • 2002
  • In these days, diesel vehicle or power plant emits $NO_X\; and SO_2$ which cause air pollution like acid-rain, ozone layer destroy and optical smoke, therefore there are many kinds of methods considered for removing them such as SCR, catalyst, plasma process, and plasma-catalyst hybrid process. T$TiO_2$ is commonly used as catalyst to remove $NO_X$ gas because it have very excellent chemical characteristic as photo catalyst. In this paper, $NO_X$ sensing characteristic of $TiO_2$ thin film deposited by R.F Magnetron sputtering is investigated. A finger shaped electrode on $Al_2$O$_3$ substrate is designed and $TiO_2$ is deposited on the electrode by the magnetron sputtering deposition system. Chemical composition of the deposited $TiO_2$ thin film is $TiO_{1.9}$ by RBS analysis. When the UV is irradiated on it with flowing air, capacitance of $TiO_2$ thin film increases, however, when NO gas is put into the system with air, it immediately decreases because of photo chemical reaction. and it monotonously decreases with increasing NO concentration.

Characterization of step-edge dc SQUID magnetometer fabricated on sapphire substrate (사파이어 기판 위에 제작된 step-edge dc SQUID magnetometer의 특성)

  • 임해용;박종혁;정구락;한택상;김인선;박용기
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.127-130
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    • 2002
  • Step-edge dc SQUID magnetometers have been fabricated on sapphire substrate. Ce$O_{2}$ buffer layer and $YBa_{2}$$Cu_{3}$ $O_{7}$(YBCO) films were deposited in-situ on the low angle (~$35^{\circ}$)steps formed on the substrates. Typical 5-$\mu$m-wide junction has $R_{N}$ of 4 $\Omega$ and $I_{c}$ of 60 $\mu$A with $I_{c}$$R_{N}$ product of 240 $\mu$V at 77 K. According to applied bias current, depth of voltage modulation was changed and maximum voltage was measured 100~300 fT/$\checkmark$ Hz at 100 Hz, and about 1.5 pT/$\checkmark$ Hz at 1 Hz. For ac bias reversal method, field noise was decreased in the 1/f region. The QRS peak of magneto-cardiogram was measured 50 pT in the magnetically shielded room.

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Thermal Phenomenon of $BaMgAl_{10}O_{17}$:$Eu^{2+}$ Blue Phosphor by XANES and Rietveld Method

  • Kim, Kwang-Bok;Koo, Kyung-Wan;Chun, Hui-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.210-213
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    • 2002
  • The blue phosphor, $BaMgAl_{10}O_{17}$:$Eu^{2+}$, showing a blue emission band at about 450 nm were prepared by solid state reaction of BaC $O_3$, A $l_2$ $O_3$, MgO and E $u_2$ $O_3$ with Al $F_3$ as a flux. The thermal quenching of BaMgAl $O_{17}$:E $u^{2+}$ phosphor significantly reduces the intensity of the blue emission. It is reduced by an amount of 50% after heating at around 800$^{\circ}C$ for 1 hr. The red emission in the 580∼720 nm region of $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_1$ and $^{5}$ $D_{0}$\longrightarro $w^{7}$ $F_2$ transition of $Eu^{3+}$ is produced from the phosphor heated above 1,100$^{\circ}C$. The EPR spectrum also reveals that some part of E $u^{2+}$ ions are oxidized to trivalent ions above 1,100$^{\circ}C$ at around 90 and 140mT. This oxidation evidence is also detected from XANES absorption spectra for $L_{III}$ shell of Eu ions: an absorption peak is at 6,977eV of E $u^{2+}$ and 6,984eV of $Eu^{3+}$. The combined X-ray and neutron data suggests that the new phase of EuMgA $l_{11}$ $O_{19}$ magnetoplumbite structure may be formed by heat treatment.eat treatment.tment.eat treatment.tment.t.

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