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http://dx.doi.org/10.46670/JSST.2020.29.5.324

Effect of Output-conductance on Current-gain Cut-off frequency in In0.8Ga0.2As High-Electron-mobility Transistors  

Rho, Tae-Beom (School of Electronics Engineering, Kyungpook National Unversity)
Kim, Dae-Hyun (School of Electronics Engineering, Kyungpook National Unversity)
Publication Information
Journal of Sensor Science and Technology / v.29, no.5, 2020 , pp. 324-327 More about this Journal
Abstract
The impact of output conductance (go) on the short-circuit current-gain cut-off frequency (fT) in In0.8Ga0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of fT in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for fT in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with Lg from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (goi) on fT was negligible. This was because, from the simplified SSM perspective, three model parameters, such as gm_ext, Cgs_ext and Cgd_ext, were weakly dependent on goi. However, in short-channel devices, goi was found to play a significant role in degrading fT as Lg was scaled down. The increase in goi in short-channel devices caused a considerable reduction in gm_ext and an overall increase in the total extrinsic gate capacitance, yielding a decrease in fT with goi. Finally, the results were used to infer how fT is influenced by goi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down Lg.
Keywords
Current gain cut-off frequency ($f_T$); HEMTs; short channel effect; small-signal model and output conductance;
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