• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.7C
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• pp.907-914
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• 2004

In this paper, we propose an application of the receiver antenna switching to an conventional adaptive modulation system and derived the optimal antenna switching threshold of the system to maximize the average transmission bit rate and analyzed its performance. Also, we compare the performances of the presented scheme with those of an adaptive modulation using the antenna selection diversity and the one with a single antenna in terms of the average number of bits per symbol and the probability of no transmission. Performance comparison results show that the proposed system has an SNR gain of 1.4 dB over the adaptive modulation using a single antenna when the average number of bits per a symbol is two and yields an SNR gain of 6 dB for maintaining the probability of no transmission at the level of 0.1.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.12a
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• pp.128-128
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• 2013

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1094-1097
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• 2003

In this paper, the cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum wire (QWR) laser at each subband were investigated. At short cavity lasers less than $300{\mu}m$, a discrete wavelength switching from the n=1 to the n=2 subband occurred due to the increased threshold gain, resulting from the increased cavity loss. Using the characteristic of the wavelength shift from n=1 to the n=2 subband with shortening the cavity length, ultrafast lasing behaviors under gain switching at the n=1 and the n=2 subband transition were demonstrated and compared.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.191-194
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• 1999

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I$_{D}$-V$_{D}$ curve as 6㎃/$\textrm{cm}^2$ and decreases as much as 50% after fatigue. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.lms.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.187-190
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• 2005

Alignment pattern of checkerboard was constructed by the stylus of atomic force microscope. Orientational bistability of the nematic liquid crystal was realized on that frustrated surface alignment. Macroscopic orientational switching between two perpendicular directions took place by an appropriate in-plane electric field. The threshold electric fields decreased in both switching directions as temperature increased. The focused laser heated up only the limited domains in the cell including a light-absorbing medium. Irradiating the laser concurrently with an appropriate electric field, we switched the selected unit domains in the alignment pattern. The switched domains maintained stably the switched direction without the disturbance from the exterior. Extending and repeating this process, we realized extremely fine devices of bistable switching.

• Korean Journal of Optics and Photonics
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• v.10 no.1
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• pp.53-57
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• 1999

We established the laser oscillator using Nd:YAG crystal grown at Ssang Yong company in Korea and investigated the characteristics of oscillation, Q-switching and wave front of output beam. We measured the single pass gain by controlling the threshold input energy with two output couplers of different output reflectances. Moreover, we compared the gain measured by different output couplers with the gain directly measured by the laser amplifier. The peak power of Q-switching, the pulse width, and the single pass gain coefficient at the threshold energy were 1.5 MW, 30ns, and 0.0958 cm-$^1$ respectively and they were compared with those of the commercial Nd:YAG crystal. Our crystal was proved to be as good as the commercial crystal.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.504-510
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• 2015

This paper presents a power and area efficient SAR ADC for multi-channel near threshold-voltage (NTV) applications such as neural recording systems. This work proposes a split dual-capacitive-array (S-DCA) structure with shifted input range for ultra low-switching energy and architecture of multi-channel single-ended SAR ADC which employs only one comparator. In addition, the proposed ADC has the same amount of equivalent capacitance at two comparator inputs, which minimizes the kickback noise. Compared with conventional SAR ADC, this work reduces the total capacitance and switching energy by 84.8% and 91.3%, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.477-481
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• 2011

Composites of insulating polyethylene and carbon black are widely used in switching elements, conductive paint, and other applications due to the large gap of resistance value. This research addresses the critical exponent of dielectric breakdown strength of polymer matrix composites (PMC) made with carbon black and polyethylene below the percolation threshold (Pt) for the first time. Here, Pt means the volume fraction of carbon black of which the resistance of the PMC is transferred from its sharp decrease to gradual decrease in accordance with the increase of carbon-black-filled content. First, the Pt is determined based on the critical exponents of resistivity and relative permittivity. Although huge cohesive bodies of carbon black are formed in case of being less than the Pt, a percolation path connecting the conducting phases is not formed. The dielectric breakdown strength (Dbs) of the PMC below Pt is measured by using an impulse voltage in the range from 10 kV to 40 kV to avoid the effect of joule heating. Although the observed Dbs data seems to be well fitted to a straight line with a slope of 0.9 on a double logarithm of (Pt-$V_{CB}$) and Dbs, the least squares method gives a slope of 0.97 for the PMC. It has been found that finite carbon-black clusters play an important role in dielectric breakdown.