• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.159-160
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• 2015

Recently, it is increased to use the portable device with small size. It is also increasing for demand of a small size adapter. To reduce the size of components, switching frequency has to be increased. But it causes higher switching loss and temperature of components. Especially, the temperature of adapter must be limited because adapter can be easily touched when portable device is being charged. To reduce temperature of adapter, high efficiency is essential. To solve this problem, this paper proposes design of resonance frequency optimization for LLC converter with high efficiency and low temperature of passive components.

• Journal of Power Electronics
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• v.17 no.6
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• pp.1490-1499
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• 2017

The modular multilevel converter (MMC) is generally considered to be a promising topology for medium-voltage and high-voltage applications. However, in order to apply it to high-power applications, a huge number of switching devices is essential. The numerous switching devices lead to considerable switching losses, high cost and a larger heat sink for each of the switching device. In order to reduce the switching losses of a MMC, this paper analyzes the performance of the conventional discontinuous pulse-width modulation (DPWM) method and its efficiency. In addition, it proposes a modified novel DPWM method for advanced switching losses reduction. The novel DPWM scheme includes an additional rotation method for voltage-balancing and power distribution among sub modules (SMs). Simulation and experimental results verify the effectiveness and performance of the proposed modulation method in terms of its switching losses reduction capability.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.357-358
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• 2013

The non-linear characteristics of ON states are important for the application to the high density cross-point memory industry because the sneak current in neighbor cells occurred during reading, erasing, and writing process. Kw of above 20 in ON states, which is the writing current @ Vwrite/the current @ 1/2Vwrite, was required in cross-point ReRAM memory industry. The high current density non-linear IV curve of ZnSe selector was shown and the ALD HfO2 switching device has the linear properties of ON states and the compliance current of 100 uA. To evaluate the performance of the selection device, we connected itto HfO2 switching device in series. The bottom electrode of the selection device was connected to the top electrode of the RRAM. All of the bias was applied with respect to the top electrode of the selection device, whereas the bottom electrode of the RRAM was grounded. In the cross-point application, 1/2Vwrite and -1/2Vwrite were applied to the word-line and bit-line, respectively, which were connected to the selected cell, and a zero bias was applied to the unselected word-lines and bit-lines. The current @ 1/2Vwrite of the unselected cells was blocked by the selection device, thus eliminating the sneak path and obtaining a writing voltage margin. Using this method, the writing voltage margin was analyzed on the basis of the memory size.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.96-103
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• 2006

This paper proposes a new technique for improving the efficiency of single phase high frequency switch mode boost converter. This converter includes an additional boost converter that follows the main hish frequency switching device. The additional converter, which is controlled at lower frequencies, bypasses almost all the current in the main switch and the high frequency switching loss is greatly reduced. Both switching devices are controlled by a simple method; each controller consists of a one-shot multivibrator, a comparator and an AND gate, and the maximum switching frequency can be limited without any clock generator. The converter works cooperatively in high efficiency and acts as though it were a conventional high frequency switch mode converter with one switching device. This paper describes the proposed converter configuration, design, and discusses the steady state performance concerning the switching loss reduction and efficiency improvement. and the proposed method is verified by computer simulation.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.285-288
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• 1998

In this paper, we present mSROS(Micro-Scalable Realtime Operating System) to be applied commonly to the device controller systems in the HANbit ACE256 system. The device controller systems in HANbit ACE256 system are organized as many kinds of device controller. Applying modified PPOS(Peripheral Processor Operating System)which is an operating system for devices of the TDX-10 switching system to the firmwares for them, the inefficiency in development and maintenance exists inherently. To remove the inefficiency nd to improve the performqance of firmwares, we build a common operating system platform that including multi-tasking microkernel so that the firmwares among devices can acquire convenient development and cheap cost of maintencance. Especially, building a virtual machine as a development methodology, it is possible to remove dependency from the kernel so that any kinds of commercial real-time kernels can be used in mSROS as a basic kernel. The virtual machine in mSROS is compatible with the API of SROS(Scalable Realtime Operating System), PPOS, and CROS(Concurrent Realtime Operating System).

• Journal of Information Display
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• v.10 no.4
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• pp.184-187
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• 2009

A liquid crystal device with switchable dynamic and memory modes was investigated and developed. The proposed device reveals the splay, $\pi$-twist, and bend states via selective switching among them. In the dynamic mode, the device is operated in the bend state, which exhibits a wide viewing-angle and a fast-response-time due to its self-compensated bend structure and flow-accelerated fast response time, respectively. In the memory mode, the permanent memory characteristics in the splay and $\pi$-twist sates are obtained, respectively. The switching mechanisms of the tristate device are also proposed.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.600-603
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• 2009

The liquid crystal device with switchable dynamic mode and memory mode has been investigated and developed. The proposed device reveals splay, ${\pi}$ twist and bend states by selective switching among them. In the dynamic mode, this device is operated in the bend state which exhibits the wide view angle and fast response time properties due to the self-compensated bend structure and flow accelerated fast response time. In the memory mode, the permanent memory characteristics in the splay and ${\pi}$ twist sates are obtained, respectively. The switching mechanisms of the tristate device are also proposed.

• Journal of the Korea Society of Computer and Information
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• v.8 no.3
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• pp.163-169
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• 2003

This study was carried out develope a motor power change speed device of motor by used micro- controller. This system was producted a auto-change speed device which switching frequency was 1,000MHz by used a auto- controller. It had a continuous output current such as 5A, 11A, 25A, 35A, 50A. It used a variable voltage from 9V to 18V(Maximum). We designed hardware of and software of micro-controller, we are made up of a auto cut-off function by 3.7V for detected power-loss prevention.

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.209-215
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• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

• Journal of Electrical Engineering and Technology
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• v.7 no.2
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• pp.236-239
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• 2012

In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.