• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.211.2-211.2
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• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.38.1-38.1
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• 2010

Nanofibers have a large potential in air filtration applications. In this work, we have developed a photocatalytic polyvinyl alcohol PVA/$TiO_2$ nanofibers membrane for the treatment of air filtration by using electrospinning method. PVA were electrospun into nanofibrous membranes and $TiO_2$ nanoparticles were loaded in PVA nanofibers in various contents from 10% (w/w) to 50% (w/w). The UV-Vis spectra were conducted for testing the existence of $TiO_2$ nanoparticles in PVA fibers. SEM analysis indicated that $TiO_2$ nanoparticles were loaded on the surface of PVA fibers and dispersed linearly along the fiber direction, which originated from the effect of polarization and orientation caused by high electric field. X-ray diffraction (XRD) was used to determine the crystalline of the membrane. Tensile strength was measured to evaluate the physical properties of the membrane. Therefore, our work suggested that PVA/$TiO_2$ nanofiber membrane has a potential application in air filtration area.

• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.222-227
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• 2006

RAINBOW(Reduced And Internally Biased Oxide Wafers) are a new class of high-displacement, piezoelectric actuator produced by selectively removing oxygen from one surface of ceramic using a high-temperature chemical reduction process. In this paper, RAINBOW actuator materials of $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_{x}Ti_{1-x})O_3$ ceramics were prepared. Its dielectric and piezoelectric properties were investigated in the vicinity of MPB. The piezoelectric properties showed the maximum value of ${\epsilon}r$ = 4871, $d_{33}$ = 610 ($10^{-12}$ m/V), $d_{31}$ = -299 ($10^{-12}$ m/V), $k_{33}$ = $71\%$, Qm = 70, in $0.4Pb(Ni_{1/3}Nb_{2/3})O_{3}-0.6Pb(Zr_{405}Ti_{595})O_3$ composition sintered at $1250^{\circ}C$. The strain - electric field characteristics of RAINBOW actuator were significantly improved comparison with the conventional bulk actuator. The prepared RAINBOW actuator showed about $390\;{\mu}m/100\;V$ displacement.

• 공업화학
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• 제31권5호
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• pp.552-559
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• 2020

Activated carbon-nickel (II) oxide (AC-NiO) electrodes were studied as materials for the capacitive deionization (CDI) of aqueous sodium chloride solution. AC-NiO electrodes were fabricated through physical mixing and low-temperature heating of precursor materials. The amount of NiO in the electrodes was varied and its effect on the deionization performance was investigated using a single-pass mode CDI setup. The pure activated carbon electrode showed the highest specific surface area among the electrodes. However, the AC-NiO electrode with approximately 10 and 20% of NiO displayed better deionization performance. The addition of a dielectric material like NiO to the carbon material resulted in the enhancement of the electric field, which eventually led to an improved deionization performance. Among all as-prepared electrodes, the AC-NiO electrode with approximately 10% of NiO gave the highest salt adsorption capacity and charge efficiency, which are equal to 7.46 mg/g and 90.1%, respectively. This finding can be attributed to the optimum enhancement of the physical and chemical characteristics of the electrode brought by the addition of the appropriate amount of NiO.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.983-989
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• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

• Journal of Magnetics
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• 제14권2호
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• pp.80-85
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• 2009

The mineral dissolution sensor system using GMR-SV and glass/Mg(200 nm) was prepared and characterized. The magnetic field sensitivity of GMR-SV to microscopic magnetic variation was about 0.8%/Oe. The change that occurs when Mg-film dissolves in water, the solubility of water, which is one of the basic properties of mineral water, was sensed by measuring the subtle variation of an electric current. In the case of edible water with Mg mineral added, bubbles were generated on the surface of the Mg film in the first 45 minutes, and the number of drops that were dissolved more rapidly than with the tap and DI waters later reduced to zero. For the edible water samples that each had different mineral Mg concentrations, the Mg solubility speed significantly differed. After injecting Mg film into the edible water, the magnetoresistance of the output GMR-SV signal decreased from a maximum of $45.4\;{\Omega}$ to a minimum of $43.6\;{\Omega}$. The measurement time was within 1 min, giving the rate of change ${\Delta}R/{\Delta}t=0.18\;{\Omega}/s$. This measurement system can be applied to develop a mineral Mg solubility GMR-SV sensor that can be used to sense the change from edible water to reduced alkali.

• 한국세라믹학회지
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• 제37권3호
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• pp.233-239
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• 2000

Sr0.9Bi2+xTa2O9(x=0, 0.1, 0.2, 0.3) thin films on IrO2/SiO2/Si or Pt/Ti/SiO2/Si substrate were prepared by spin coating method using SBT stock solutions synthesized by MOD process. SBT thin films on IrO2 transformed to layered perovskite phase at $700^{\circ}C$, but showed low breakdown voltage due to their porous microstructure. The smaple of Sr0.9Bi2+xTa2O9 composition showed the best dielectric and electrical properties. When the sample of the same composition was annealed at 80$0^{\circ}C$, the dielectric and electric properties were improved due to the grian growth and dense surface. the remanent polarization values(2Pr) at $\pm$3 V for IrO2 and Pt electrodes were 10.5, 7.15$\mu$C/$\textrm{cm}^2$, respectively. The SBT thin film with IrO2 electrode showed the lower coercive field. The leakage current density and breakdown voltage of SBT thin films on IrO2 were higher than those on Pt.

• Korean Chemical Engineering Research
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• 제46권5호
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• pp.852-857
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• 2008

광촉매의 고정화는 광촉매의 이용범위를 넓히기 위해서 매우 중요한 기술이다. 광촉매를 고정화시키기 위해 티타늄 표면을 양극산화 시켜 $TiO_2$로 전환시킬 수 있다. 양극산화에 의해 제조된 $TiO_2$는 광촉매 활성을 가지고 있으며 표면은 스펀지와 비슷한 형태를 나타내었다. 다양한 초기농도, 습도, 방전전압 하에서 양극산화에 의해 티타니아를 제조 이를 이용하여 기상의 아세트알데히드와 VOC의 광촉매 분해반응을 연구하였다. 양극산화 티타니아의 반응성은 상대습도가 증가함에 따라 증가하였으나 너무 높은 습도는 반응성을 감소시켰다. 광촉매 반응과 전기 방전을 결합시키면 VOC 제거효율이 크게 증가 되었으나, 과도한 전압을 가하여 코로나 방전이 발생되면 반응속도가 오히려 감소되었다. 최적 상대습도는 40%였으며 최적 방전전압은 암방전 영역인 5 kV였다.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.75-80
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• 2012

Polymer composites which have electrical properties have been studied in various industries. The Multi-walled carbon nanotube (MWCNT) are thought to be reinforcements for polymers because of their high aspect ratio and specially mechanical, thermal and electrical properties. We introduced MWCNT and impact modifier in order to improve thermal and mechanical properties of Polyphenylene sulfide (PPS) and give electric characteristic to PPS. The thermal properties were investigated by Differential scanning calorimeter (DSC) and Thermogravimetric analysis (TGA). The morphology, mechanical properties and electrical characteristic were performed by Field emission scanning electron microscopy (FE-SEM), Izod impact tester and surface resistance meter. As a result, we could find that the PPS/MWCNT composites have high conductivity and good mechanical properties than neat PPS resin.

• ETRI Journal
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• 제26권1호
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• pp.7-13
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• 2004

To improve the characteristics of breakdown voltage and specific on-resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon-on-insulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific on-resistance. The breakdown voltage and the specific on-resistance of the fabricated device is 352 V and $18.8 m{\Omega}{\cdot}cm^2$ with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on-state is over 200 V and the saturation current at $V_{gs}=5V$ and $V_{ds}$=20V is 16 mA with a gate width of $150{\mu}m$.