1 |
G. J. Norga, S. Jin, L. Fe, D. J Wouters, H. Bender, and H. E. Maes, 'Growth of (111)-oriented layers on nanocrystalline electrodes using the sol-gel technique', Journal of Materials Research, Vol. 16, No.3, p. 828, 2001
|
2 |
H. Fukakubo, T. Hioki, M. Otsu, K. Shinozaki, and N. Mizutani, 'Film thickness dependence of dielectric property and crystal structure of film prepared on Pt//Si substrate by metal organic chemical vapor deposition', Jpn. J. Appl. Phys., Vol. 32, No. 9B, p. 4175, 1993
|
3 |
S. O. Chung, J. W. Kim, G. H. Kim, C. O. Park, and W. J. Lee, 'Formation of a lead zirconate titanate (PZT)/Pt interfacial layer and structural changes in the Pt/Ti//Si substrate during the deposition of PZT thin film by electron cyclotron resonance plasma-enhanced chemical vapor deposition', Jpn. J. Appl. Phys., Vol. 36, No. 7A, p. 4386, 1997
|
4 |
J. J. Lee and S. B. Desu, 'Electrode contacts on ferroelectric thin films and their influence on fatigue properties', Ferroelectrics, Vol. 20, p. 27, 1995
|
5 |
T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, 'Preparation of thin films on Ir and electrodes', Jpn. J Appl. Phys., Vol. 33, No. 9B, p. 5207, 1994
|
6 |
G. Asano, H. Morioka, H. Funakubo, T. Shibutami, and N. Oshima, 'Fatigue-free capacitor prepared by metalorganic chemical vapor deposition at ', Appl. Phys. Lett, Vol. 83, No. 26, p. 5505, 2003
|
7 |
Y. Masuda and T. Nozaka, 'The influence of various upper electrodes on fatigue properties of perovskite thin films', Jpn. J Appl. Phys., Vol. 42, No. 9B, p. 5941, 2003
|
8 |
C. V. R. Vasant Kumar, R. Pascual, and M. Sayer, 'Crystallization of sputtered lead zirconate titanate films by rapid thermal processing', J. Appl. Phys., Vol. 71, No. 2, p. 864, 1992
DOI
|
9 |
H. N. AI-Shareef, K. R. Bellur, O. Auciello, and A I. Kingon, 'Effects of electrodes on the phase evolution and microstructure of films', Ferroelectrics, Vol. 152, p. 85, 1994
|
10 |
H. Hase, T. Sakuma, Y. Miyasaka, K. Hirata, and N. Hosokawa, 'Preparation of thin films by multi-target sputtering', Jpn. J. Appl. Phys., Vol. 32, No. 9B, p. 4061, 1993
|