• Journal of the Korean Applied Science and Technology
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• v.31 no.1
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• pp.59-65
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• 2014

Indoor air quality including metro subway is of recent interests in large cities. Inflow air to the inside of the train and circulating air flow through MVAC of stations contain large amount of iron based fine particles. This paper evaluated the collection of such a dust by magnetic filters as comparing to conventional particle capturing mechanisms such as inertia, direct impaction and diffusion. It was found that filtration velocity, magnetic field intensity, and fiber size were the most important parameters for magnetic filtration. Application of magnetic force obviously enhances the collection efficiency particularly in fine modes smaller than 10 mm. However, its effect was found greater in 2.5 mm than submicron particles.

• Journal of Powder Materials
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• v.11 no.2
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• pp.149-157
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• 2004

High temperature deformation behavior of activated sintered W powder compacts was investigated. The compression tests were carried out in the temperature range between 900 and 110$0^{\circ}C$ at the strain rate of $10^{-3}s^{-1}$. The sintered specimens of Ni-doped submicron W powder compacts showed decrease in W grain size with increasing the Ni content. As the result, the flow stress was significantly increased with increasing the Ni content. We obtained Ni-activated sintered W compacts with the relative density of 94 $\pm$ l％and the average grain size of less than 5${\mu}{\textrm}{m}$. A moderate true strain up to 0.60 was obtained without fracture even at 110$0^{\circ}C$ with the strain rate of $10^{-3}s^{-1}$ for the activated W compact despite adding the 1.0 wt％Ni to submicron W powder.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• Journal of information and communication convergence engineering
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• v.13 no.1
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• pp.56-61
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• 2015

The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.130-133
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• 2011

A comparative study of two capacitance methods to measure the effective channel length in deep-submicron MOSFETs has been made in detail. Since the reduction of the overlap capacitance in the accumulation region is smaller than the addition of the inner fringe capacitance at zero gate voltage, the capacitance method removing the parasitic capacitance in the accumulation region extracts a more accurate effective channel length than the method removing that at zero gate voltage.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.469-472
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• 1987

The hot-carrier induced degradation in very short-channel MOSFET was studied systematically. Under the traditional DC stress conditions, the threshold voltage shift (${\Delta}Vt$) and the transconductance degradation (${\Delta}Gm$/(Gmo-${\Delta}Gm$)) were confirmed to depend exponentially on the stress time and the dependency between the two parameters was proved to be linear. And the degradation due to the DC stress across gate and drain was studied. As the AC dynamic process is more realistic in actual device operation, the effects of dynamic stresses were studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1084-1090
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• 1998

As device sizes are scaled down to submicron dimensions, planarization technology becomes increasingly important for both device fabrication and formation of multilevel interconnects. Chemical mechanical polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. The polishing process has many variables, and most of which are not well understood. The factors determine the planarization performance are slurry and pad type, insert material, conditioning technique, and choice of polishing tool. Circuit density, pattern size, and wiring layout also affect the performance of a CMP planarization process. This paper presents the results of studies on CMP process window characterization for 0.35 micron process with 5 metal layers.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.368-369
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• 2006

By means of magnetic pulsed compaction and sintering of weakly aggregated alumina based nanopowders the jet forming nozzle samples for the hydroabrasive cutting were fabricated. The ceramics was obtained from pure alumina, as well as from alumina, doped by $TiO_2$, MgO and AlMg. It was shown that the samples sintered from AlMg doped $Al_2O_3$ powder have the best mechanical properties and structural characteristics: relative density ${\sim}0.97$, channel microhardness. - 18-20 GPa, channel surface roughness ${\sim}0.7\;{\mu}m$, average crystallite size ${\sim}1\;{\mu}m$.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2005.11a
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• pp.315-316
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• 2005

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1995.04a
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• pp.35-35
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• 1995