1 |
Y. Taur, "MOSFET channel length : extraction and interpretation," IEEE Trans. Electron Devices, Vol. 47, No.1, pp.160-170, Jan., 2000.
DOI
ScienceOn
|
2 |
S. Lee, "A new RF capacitance method to extract the effective channel length of MOSFET's using Sparameters," in Proc. IEEE Hong Kong Electron Devices Mtg., pp.56-59, June 2000.
DOI
|
3 |
A. Ferrero and U. Pisani, "QSOLT: A new fast calibration algorithm for two port S parameter measurements," 38th ARFTG Conference Digest, pp. 15-24, Winter 1991.
DOI
|
4 |
S. Lee, "Effects of pad and interconnection parasitics on forward transit time in HBTs," IEEE Trans. Electron Devices, Vol.46, No.2, pp.275-280, Feb., 1999.
DOI
ScienceOn
|
5 |
J.-Y. Kim, B.-H. Ko, M.-K. Choi, and S. Lee, "RF extraction method for source/drain overlap and depletion length of deep-submicron RF MOSFETs using intrinsic gate-bulk capacitance," Electron. Lett., Vol.46, No.23, pp.1566-1568, Nov., 2010.
DOI
ScienceOn
|
6 |
Y. Tsividis, "Operation and modeling of the MOS transistor", 2nd ed, McGraw-Hill, p.404, 1999.
|
7 |
N. Arora, "MOSFET modeling for VLSI simulation : theory and practice," World Scientific, p.468, 2007.
|
8 |
C. T. Yao, I. A. Mack, and H. C. Lin, "Accuracy of effective channel-length extraction using the capacitance method," IEEE Electron Device Lett., Vol.EDL-7, No.4, pp.268-270, Apr., 1986.
DOI
ScienceOn
|