• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.255-260
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• 2023

As demanding the detection of explosive molecules, it is required to develop rapidly and precisely responsive sensors with ultra-high sensitivity. Since two-dimensional semiconductors have an atomically thin body nature where mobile carriers accumulate, the abrupt modulation carrier in the thin body channel can be expected. To investigate the effectiveness of WSe₂ semiconductor materials as a detection material for TNT (Trinitrotoluene) explosives, WSe₂ was synthesized using thermal chemical vapor deposition, and afterward, WSe₂ FETs (Field Effect Transistors) were fabricated using standard photo-lithograph processes. Raman Spectrum and FT-IR (Fourier-transform infrared) spectroscopy reveal that the adsorption of TNT molecules induces the structural transition of WSe₂ crystalline. The electrical properties before and after adsorption of TNT molecules on the WSe₂ surface were compared; as -50 V was applied as the back gate bias, 0.02 μA was recorded in the bare state, and the drain current increased to 0.41 μA with a dropping 0.6% (w/v) TNT while maintaining the p-type behavior. Afterward, the electrical characteristics were additionally evaluated by comparing the carrier mobility, hysteresis, and on/off ratio. Consequently, the present report provides the milestone for developing ultra-sensitive sensors with rapid response and high precision.

• Journal of the Korean Electrochemical Society
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• v.23 no.1
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• pp.18-23
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• 2020

Antimony telluride (Sb_xTe_y) thin films were synthesized by an electrodeposition method with a control of applied potential at room temperature. Characterization of electrical and thermoelectric properties such as conductivity, Seebeck coefficient, and power factor (P.F.) were conducted as a function of the chemical composition of the electrodeposited films. Morphology of thin films were dense and uniform and the composition was tailored from 25 to 60 at.% of the Sb content by altering the applied potential from -0.13 to -0.27 V (vs. SCE). The conductivity of the films were ranged from 2 × 10^-4 ~ 5 × 10^-1 S/cm indicating their amorphous behavior. The meaured Seebeck coefficient of films were relatively high compared to that of bulk single cyrstal Sb_xTe_y due to their low carrier concentration. The variation of the Seebeck coefficient of the films was also related to the change of chemical composition, showing the power factor of ~10 ㎼/mK².

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.68-71
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• 2020

In this study, SiNx and Al₂O₃ thin film was manufactured using PECVD deposition process and applied to crystalline silicon solar cells, resulting in 16.7% conversion efficiency. The structural improvement experiment of the rear electrode resulted in a 1.7% improvement in conversion efficiency compared to the reference cell by reducing the recombination rate of minority carriers and increasing the carrier lifetime by forming a passivation layer consisting of SiNx and Al₂O₃ thin films through the PECVD process.

• Journal of the Korea Society of Computer and Information
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• v.10 no.6 s.38
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• pp.209-218
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• 2005

In this paper, we present an Active Optical Network(AON) . The AON uses the Dense Wavelength Division Multiplexing(DWDM) from optical communication access network of ring type, and will be able to provide the smoothly service in the Bandwidth on Demand by using DWDM. It supports the connection of the multiple wavelength and the Sub-Carrier from the optical gigabit ethernet switch. The Wavelength Add Drop Multiplexer(WADM) extracts a specific wavelength, and composes a node of the ring network. The specific wavelength becomes demultiplexing in the Sub-Carrier and it is distributed in the user The active connection of optical gigabit ethernet switch where the distribution of access network is started and access terminal connection equipment is possible. By the BoD from the AON it compares the buffer size which changes, and it analyzes. Also the Time delay of bit compares with the throughput of server The limit of amount of time is decided. Consequently it will be able to realize the dynamic use protocol and an efficient algorithm of the network.

• International Journal of Computer Science & Network Security
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• v.23 no.5
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• pp.172-178
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• 2023

In this paper, performance of autoencoder based OFDM communication systems is compared with IEEE 802.11a Wireless Lan System (Wi-Fi). The proposed autoencoder based OFDM system is composed of the following steps. First, one sub-carrier's transmitter - channel - receiver system is created by autoencoder. Then learning process of the one sub-carrier autoencoder generates constellation map. Secondly, using the plural sub-carrier autoencoder systems, parallel bundle is configured with inserting IFFT and FFT before and after the channel to configure OFDM system. Finally, the receiver part of the OFDM communication system was updated by re-learning process for adapting channel condition such as multipath channel. For performance comparison, IEEE802.11a and the proposed autoencoder based OFDM system are compared. For channel estimation, Wi-Fi uses initial long preamble to measure channel condition. but Autoencoder needs re-learning process to create an equalizer which compensate a distortion caused by the transmission channel. Therefore, this autoencoder based system has basic advantage to the Wi-Fi system. For the comparison of the system, additive random noise and 2-wave and 4-wave multipaths are assumed in the transmission path with no inter-symbol interference. A simulation was performed to compare the conventional type and the autoencoder. As a result of the simulation, the autoencoder properly generated automatic constellations with QPSK, 16QAM, and 64QAM. In the previous simulation, the received data was relearned, thus the performance was poor, but the performance improved by making the initial value of reception a random number. A function equivalent to an equalizer for multipath channels has been realized in OFDM systems. As a future task, there is not include error correction at this time, we plan to make further improvements by incorporating error correction in the future.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.62-69
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• 1998

The general degradation model has been applied to analyze the hot carrier induced degradation of the DC and RF characteristics of RF-nMOSFET. The degradation of cut-off frequency has been severer than the degradation of bulk MOSFET drain current. The value of the degradation rate n and the degradation parameter m for RF-nMOSFET has been equal to those for bulk MOSFET. The decrease of device degradation with the increase of fingers could be explained by the large source/drain parasitic resistance and drain saturation voltage. It has been also found that the RF performance degradation could be explained by the decrease of $g_{m}$ and $C_{gd}$ and the increase of $g_{ds}$ after stress. The degradation of the DC and RF characteristics of RF-nMOSFET could be predicted by the measurement of the substrate current.t.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.294-301
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• 2013

OFDM technique uses multiple sub-carriers for the data transmission. Therefore, bit error rate increases because of inter-carrier interference caused by nonlinear high power amplifier and carrier frequency offset. Wireless OFDM transmission over multi path fading channels is characterized by small transmission gain in multiple sub-carrier frequency interval. Therefore bit error rate increases because of burst errors. Inter-leaver and convolution error control coding are effective for the reduction of this burst error. Pilot symbol is used for the channel estimation in OFDM systems. However, imperfect channel estimates in this systems degrade the performance. The performance of this convolution coding OFDM systems using inter-leaver, gauged by the bit error rate, is analyzed considering the nonlinear high power amplifier, carrier frequency offset and channel estimation error.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2226-2234
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• 2016

Orthogonal Frequency Division Multiplexing (OFDM) technique uses multiple sub-carriers for the data transmission. Therefore, Inter Carrier Interference(ICI) is generated because of nonlinear high power amplifier and carrier frequency offset. Wireless OFDM transmission over Doppler fading channels also causes ICI. In OFDMA(Orthogonal Frequency Division Multiplexing Access), multiple sub-carriers are allocated to each user. Therefore, inter carrier interference causes interference to other users. I evaluate the BER performance of OFDMA systems in frequency selective fading channel, considering Multi-User Interference (MUI) owing to the carrier frequency offset, the nonlinear high power amplifier, and the Doppler fading. In the uplink OFDMA, multi-user interference introduces larger BER degradation than in the downlink. I explain the reason and obtain the required characteristics of the nonlinear amplifier and the value of frequency offset for good BER performance. And I also analyze the BER degradation upon Doppler fading channel.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.271-277
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• 2004

A Si(Silicon) MEMS(Micro Electro Mechanical System) package using a doped lossy Si carrier for CPW(Coplanar Waveguide) MMICs(Microwave and Millimeter-wave Integrated Circuits) is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed chip-carrier scheme is verified by fabricating and measuring a GaAs CPW on the two types of carriers(conductor-back metal, doped lossy Si) in the frequency from 0.5 to 40 ㎓. The proposed MEMS package using the lightly doped lossy(15 Ω$.$cm) Si chip-carrier and the HRS(High Resistivity Silicon, 15 ㏀$.$cm) shows the optimized loss and parasitic problems-free since the doped lossy Si-carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss of only - 2.0 ㏈ and a power loss of - 7.5 ㏈ at 40 ㎓.

• Korean Chemical Engineering Research
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• v.59 no.4
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• pp.514-520
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• 2021

A drug delivery system (DDS) based on nanoparticles has been used as a mediator to improve the efficacy of a drug by controlling the amount of drug released and delivering it to a target place. Chitosan, which is non-toxic and biodegradable, has good biocompatibility and excellent adsorption, so it can be used as a drug delivery vehicle. Valine, the essential amino acids, helps muscle growth and tissue recovery, and along with other amino acids. It lowers blood sugar levels and increases growth hormone production. In this study, Valine was adsorbed on magnetic chitosan which is capable of drug absorption, and Fe₃O₄-Valine CNPs was prepared through cross-linking with TPP (Tripolyphosphate). And then absorption and release trends of valine were investigated with the Fe₃O₄-Valine CNPs. Fe₃O₄, which has relatively high stability, is used to make the drug carrier magnetic so that the drug can be delivered to a target place. At optimal conditions, the absorption and release tendency of Fe₃O₄-Valine CNP was confirmed by analyzing by UV-Vis through the Ninhydrin test which is the color reaction of amino acids and by measuring the size of the particles, it was confirmed that it is suitable as a drug carrier.