• Current Optics and Photonics
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• 제3권6호
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• pp.516-521
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• 2019

The electrical leakage levels of GaN-based light-emitting diodes (LEDs) containing leakage paths are estimated using photoluminescence (PL) and photovoltaic properties under photoexcitation conditions. The PL intensity and open-circuit voltage (V_OC) decrease because of carrier leakages depending on photoexcitation conditions when compared with reference values for typical LED chips without leakage paths. Changes of photovoltage-photocurrent characteristics and PL intensity due to carrier leakage are employed to assess the leakage current levels of LEDs with leakage paths. The current corresponding to the reduced V_OC of an LED with leakage from the photovoltaic curve of a reference LED without leakage is matched with the leakage current calculated using the PL intensity reduction ratio and short-circuit current of the LED with leakage. The current needed to increase the voltage for an LED with a leakage under photoexcitation from V_OC of the LED up to V_OC of a reference LED without a leakage is identical to the additional current needed for optical turn-on of the LED with a leakage. The leakage current level estimated using the PL and photovoltaic properties under photoexcitation is consistent with the leakage level measured from the voltage-current characteristic obtained under current injection conditions.

• 한국통신학회논문지
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• 제40권7호
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• pp.1433-1440
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• 2015

본 논문에서는 이진 옵셋 반송파 (binary offset carrier: BOC) 신호의 추적 성능 향상을 위한 비모호 상관함수를 제안한다. 구체적으로는 BOC 신호의 부반송파를 여러 개의 펄스가 존재하는 형태로 해석하고, BOC 신호의 자기상관함수를 여러 개의 부분상관함수들의 합으로 해석한다. 이후 두 개의 부분상관함수를 조합하여 새로운 두개의 부상관함수를 생성하고, 부상관함수와 부분상관함수의 조합을 통하여 폭을 조절할 수 있으며 주변 첨두를 가지지 않는 비모호 상관함수를 제안한다. 모의실험을 통해 신호 추적에 제안한 상관함수를 이용한 경우 기존의 상관함수들을 이용한 경우에 비해 더욱 향상된 추적 오류 표준편차를 가지는 것을 확인한다.

• International Journal of Computer Science & Network Security
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• 제23권6호
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• pp.27-34
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• 2023

This paper proposed an Inter-Carrier-Interference (ICI) Canceling Orthogonal Frequency Division Multiplexing (OFDM) receiver for 5G mobile system to support 500 km/h linear motor high speed terrestrial transportation service. A receiver in such high-speed train sees the transmission channel which is composed of multiple Doppler-shifted propagation paths. Then, a loss of sub-carrier orthogonality due to Doppler-spread channels causes ICI. The ICI Canceler is realized by the following three steps. First, using the Demodulation Reference Symbol (DMRS) pilot signals, it analyzes three parameters such as attenuation, relative delay, and Doppler-shift of each multi-path component. Secondly, based on the sets of three parameters, Channel Transfer Function (CTF) of sender sub-carrier number 𝒏 to receiver sub-carrier number 𝒍 is generated. In case of 𝒏≠𝒍, the CTF corresponds to ICI factor. Thirdly, since ICI factor is obtained, by applying ICI reverse operation by Multi-Tap Equalizer, ICI canceling can be realized. ICI canceling performance has been simulated assuming severe channel condition such as 500 km/h, 2 path reverse Doppler Shift for QPSK, 16QAM, 64QAM and 256QAM modulations. In particular, for modulation schemes below 16QAM, we confirmed that the difference between BER in a 2 path reverse Doppler shift environment and stationary environment at a moving speed of 500 km/h was very small when the number of taps in the multi-tap equalizer was set to 31 taps or more. We also confirmed that the BER performance in high-speed mobile communications for multi-level modulation schemes above 64QAM is dramatically improved by the use of a multi-tap equalizer.

• 공업화학
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• 제30권1호
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• pp.43-48
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• 2019

본 연구는 매체순환연소공정용 산소전달입자로서 $CaSnO_3$ 입자의 타당성을 조사하기 위해 수행하였다. $CaSnO_3$은 페롭스카이트 구조를 가지고, 반복되는 환원-산화 반응 후에도 구조적안정성을 보였다. 산소전달량은 환원 반응 시 결정구조 변화를 통해 계산된 이론 수치와 거의 동일한 15.4 wt%를 가졌다. 10번의 환원과 산화 반응 후에, 산소전달량과 산소전달속도는 작동 온도에서 일정하게 유지되었다. 결론적으로, $CaSnO_3$ 입자는 CLC의 산소 운반체로서 좋은 대체 물질이 될 수 있다고 판단하였다.

• Journal of information and communication convergence engineering
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• 제16권4호
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• pp.248-251
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• 2018

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

• 한국광학회지
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• 제17권2호
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• pp.181-185
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• 2006

리튬나이오베이트 기판의 분극 반전 기술을 이용하여 300Hz 대역 광변조기를 제작하였고 60 GHz 광캐리어 발생기로 응용하였다. 주기적인 분극반전은 도파광과 RF사이의 QVM(Quasi-Velocity-Matching)을 유발하여 대역변조를 가능하게 하였다. 제작된 광변조기는 30.3 GHz에서 최대 변조효율을 보였으며, 3 dB 변조 대역폭은 약 5.1 GHz로 측정되었다. DSB-SC(Double Sideband Suppressed Carrier) 측정 실험을 통해 입사된 광 주파수로부터 30 GHz 간격으로 USB(Upper Sideband)와 LSB(Lower Sideband)를 발생시켰으며 입사광의 스펙트럼은 발생된 USB 혹은 LSB에 비해 28 dB정도 억제됨으로써, 30GHz 대역 광변조기가 60 GHz 광캐리어 발생기로 응용될 수 있음을 보였다.

• Advances in nano research
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• 제13권3호
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• pp.259-267
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• 2022

Two-dimensional (2D) transition metal carbides/nitrides or "MXenes" belong to a diverse-class of layered compounds, which offer composition- and electric-field-tunable electrical and physical properties. Although the majority of the MXenes, including Ti₃C₂T_x, are metallic, they typically show semiconductor-like behaviour in their percolated thin-film structure; this is also the most common structure used for fundamental studies and prototype device development of MXene. Magnetoconductance studies of thin-film MXenes are central to understanding their electronic transport properties and charge carrier dynamics, and also to evaluate their potential for spin-tronics and magnetoelectronics. Since MXenes are produced through solution processing, it is desirable to develop deposition strategies such as inkjet-printing to enable scale-up production with intricate structures/networks. Here, we systematically investigate the extrinsic negative magnetoconductance of inkjetprinted Ti₃C₂T_x MXene thin-films and report a crossover from weak anti-localization (WAL) to weak localization (WL) near 2.5K. The crossover from WAL to WL is consistent with strong, extrinsic, spin-orbit coupling, a key property for active control of spin currents in spin-orbitronic devices. From WAL/WL magnetoconductance analysis, we estimate that the printed MXene thin-film has a spin orbit coupling field of up to 0.84 T at 1.9 K. Our results and analyses offer a deeper understanding into microscopic charge carrier transport in Ti₃C₂T_x, revealing promising properties for printed, flexible, electronic and spinorbitronic device applications.

• 한국분말재료학회지
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• 제31권2호
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• pp.119-125
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• 2024

The n-type Bi_2-xSb_xTe₃ compounds have been of great interest due to its potential to achieve a high thermoelectric performance, comparable to that of p-type Bi_2-xSb_xTe₃. However, a comprehensive understanding on the thermoelectric properties remains lacking. Here, we investigate the thermoelectric transport properties and band characteristics of n-type Bi_2-xSb_xTe₃ (x = 0.1 - 1.1) based on experimental and theoretical considerations. We find that the higher power factor at lower Sb content results from the optimized balance between the density of state effective mass and nondegenerate mobility. Additionally, a higher carrier concentration at lower x suppresses bipolar conduction, thereby reducing thermal conductivity at elevated temperatures. Consequently, the highest zT of ~ 0.5 is observed at 450 K for x = 0.1 and, according to the single parabolic band model, it could be further improved by ~70 % through carrier concentration tuning.

• 센서학회지
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• 제31권1호
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• pp.41-44
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• 2022

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al₂O₃/HfO₂ = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 10³ at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

• Advances in nano research
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• 제10권5호
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.