Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Constant Voltage Stress (CVS) and Hot Carrier Injection (HCI) Degradations of Vertical Double-date InGaAs TFETs for Bio Sensor Applications

바이오 센서 적용을 위한 수직형 이중게이트 InGaAs TFET의 게이트 열화 현상 분석

  • Baek, Ji-Min (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kim, Dae-Hyun (School of Electronic and Electrical Engineering, Kyungpook National University)
  • 백지민 (경북대학교 전자전기공학부) ;
  • 김대현 (경북대학교 전자전기공학부)
  • Received : 2021.10.19
  • Accepted : 2022.01.14
  • Published : 2022.01.31
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Abstract

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al2O3/HfO2 = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 103 at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

Keywords

Acknowledgement

이 논문은 2021 년도 정부 (과학기술정보통신부)의 재원으로 한국연구재단-나노·소재기술개발사업의 지원을 받아 수행된 연구임 (NRF-2017M3A7B4049517).

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