• Bulletin of the Korean Chemical Society
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• v.29 no.1
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• pp.139-147
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• 2008

New PPV derivatives which contain electron-withdrawing CF3F4phenyl group, poly[2-(2-ethylhexyloxy)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (CF3F4P-PPV), and poly[2-(4-(2-etylhexyloxy)-phenyl)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (P-CF3F4P-PPV), have been synthesized by GILCH polymerization. As the result of the introduction of the electron-withdrawing CF3F4phenyl group to the phenyl backbone, the LUMO and HOMO energy levels of CF3F4P-PPV (3.14, 5.50 eV) and P-CF3F4P-PPV (3.07, 5.60 eV) were reduced. The PL emission spectra in solid thin film are more red-shifted over 50 nm and increased fwhm (full width at half maximum) than solution conditions by raising aggregation among polymer backbone due to electron withdrawing effect of 2,3,5,6-tetrafluoro-4-trifluoromethylphenyl group. The EL emission maxima of CF3F4P-PPV and P-CF3F4P-PPV appear at around 530-543 nm. The current density-voltage-luminescence (J-V-L) characteristics of ITO/PEDOT/polymer/Al devices of CF3F4P-PPV and P-CF3F4P-PPV show that turn-on voltages are around 12.5 and 7.0 V, and the maximum brightness are about 82 and 598 cd/m2, respectively. The maximum EL efficiency of P-CF3F4P-PPV (0.51 cd/A) was higher than that of CF3F4P-PPV (0.025 cd/A).

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.357-363
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• 2015

The development of the environment-friendly tire that meets the standard requirements according to tire labeling system can be improved through using highly homogeneous silica immobilized zinc oxide nanoparticles. In this study, a considerable amount of nanoporous silica was essentially added into nano zinc oxide to improve the physiochemical properties of the formed composite. The introduction of nanoporous silica materials in the composite facilitates the improvement of the wear-resistance and increases the elasticity of the tread. Therefore, the introduction of nanoporous silica can replace carbon black as filler in the formation of composites with desirable properties for conventional green tire. Herein, mesoporous silica immobilized zinc oxide nanoparticle with desirable properties for rubber compounds was investigated. Composites with homogeneous dispersion were obtained in the absence of dispersants. The dispersion stability was controlled through varying the molar ratio, ageing time and mixing order of the reactants. A superior dispersion was achieved in the sample obtained using 0.03 mol of zinc precursor as it had the smallest grain size (50.5 nm) and then immobilized in silica aged for 10 days. Moreover, the specific surface area of this sample was the highest ($649m^2/g$).

• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.634-638
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• 1998

Monodisperse, spherical $PMSQ/TiO_2$ composite fine powders were prepared by modified sol-gel process where 300 nm $TiO_2$ fine powders were used as seed particles for hetero-condensation with hydrolyzed MTMS (Methyltrimethoxysilane). The reaction was carried out under $N_2$ atmosphere at ambient temperature using $NH_3$ as a catalyst. Methanol was used as a solvent. Powder was obtained by the filtration of the solution with a glass filter and washing with acetone. The stirring rate, reaction temperature, $[H_2O]/[MTMS]$ and $[MTMS]/[TiO_2]$ ratio were varied to investigate shapes and sizes of particles. Monodisperse particles of $1-2{\mu}m$ diameter were obtained with [MTMS]=0.2 M, $[NH_3]=0.6M$, $[H_2O]/[MTMS]=100$, $[MTMS]/[TiO_2]=10-50$ at ambient temperature with mild stirring condition. These composite particles had a contact angle of almost 180 degree contact angle with water, which proves their excellent hydrophobicity. The study of UV absorption spectra showed that they have UV protecting effect.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.240-245
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• 2013

Electrochemical surface treatment is commonly used to form a thin, rough, and porous oxidation layer on the surface of titanium. The purpose of this study was to investigate the formation of nanotubular titanium oxide arrays during short anodization processing. The specimen used in this study was 99.9% pure cp-Ti (ASTM Grade II) in the form of a disc with diameter of 15 mm and a thickness of 1 mm. A DC power supplier was used with the anodizing apparatus, and the titanium specimen and the platinum plate ($3mm{\times}4mm{\times}0.1mm$) were connected to an anode and cathode, respectively. The progressive formation of $TiO_2$ nanotubes was observed with FE-SEM (Field Emission Scanning Electron Microscopy). Highly ordered $TiO_2$ nanotubes were formed at a potential of 20 V in a solution of 1M $H_3PO_4$ + 1.5 wt.% HF for 10 minutes, corresponding with steady state processing. The diameters and the closed ends of $TiO_2$ nanotubes measured at a value of 50 cumulative percent were 100 nm and 120 nm, respectively. The $TiO_2$ nanotubes had lengths of 500 nm. As the anodization processing reached 10 minutes, the frequency distribution for the diameters and the closed ends of the $TiO_2$ nanotubes was gradually reduced. Short anodization processing for $TiO_2$ nanotubes of within 10 minutes was established.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.41-47
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• 2020

The effect of Co interlayer on the interfacial reliability of SiN_x/Co/Cu thin film structure for advanced Cu interconnects was systematically evaluated by using a double cantilever beam test. The interfacial adhesion energy of the SiN_x/Cu thin film structure was 0.90 J/㎡. This value of the SiN_x/Co/Cu thin film structure increased to 9.59 J/㎡.Measured interfacial adhesion energy of SiN_x/Co/Cu structure was around 10 times higher than SiN_x/Cu structure due to CoSi₂ reaction layer formation at SiN_x/Co interface, which was confirmed by X-ray photoelectron spectroscopy analysis. The interfacial adhesion energy of SiN_x/Co/Cu structure decreased sharply after post-annealing at 200℃ for 24 h due to Co oxidation at SiN_x/Co interface. Therefore, it is required to control the CoO and Co₃O₄ formation during the environmental storage of the SiN_x/Co/Cu thin film to achieve interfacial reliability for advanced Cu interconnections.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.846-850
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• 2004

NiCo silicide films have been fabricated from $300{\AA}-thick\;Ni_{1-x}Co_{x}(x=0.1\sim0.9)$ on Si-substrates by varying RTA(rapid thermal annealing) temperatures from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 sec. Sheet resistance, cross-sectional microstructure, and chemical composition evolution were measured by a four point probe, a transmission electron microscope(TEM), and an Auger depth profilemeter, respectively. For silicides of the all composition and temperatures except for $80\%$ of the Ni composition, we observed small sheet resistance of sub- $7\;{\Omega}/sq.,$ which was stable even at $1100^{\circ}C$. We report that our newly proposed NiCo silicides may obtain sub 50 nm-thick films by tunning the nickel composition and silicidation temperature. New NiCo silicides from NiCo-alloys may be more appropriate for sub-0.1${\mu}m$ CMOS process, compared to conventional single phase or stacked composit silicides.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.2
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• pp.15-21
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• 2019

We investigated the structural, electrical and optical properties of zinc oxide (ZnO) ultra-thin films grown at $150^{\circ}C$ by atomic layer deposition (ALD). Diethylzinc and deionized water were used as metal precursors and reactants, respectively, for the deposition of ZnO thin films. The growth rate per ALD cycle was a constant 0.21 nm/cycle at $150^{\circ}C$, and samples below 50 cycles had amorphous properties due to the relatively thin thickness at the initial ALD growth stage. With the increase of the thickness from 100 cycles to 200 cycles, the crystallinity of ZnO thin films was increased and hexagonal wurtzite structure was observed. In addition, the particle size of the ZnO thin film increased with increasing number of ALD cycles. Electrical properties analysis showed that the resistivity value decreased with the increase of the thin film thickness, which is correlated with the decrease of the grain boundary concentration in the thicker ZnO thin film due to the increase of grain size and the improvement of the crystallinity. Optical characterization results showed that the band edge absorption in the near ultraviolet region (300 nm~400 nm) was increased and shifted. This phenomenon is due to the increase of the carrier concentration with the increase of the ZnO thin film thickness. This result agrees well with the decrease of the resistivity with the increase of the thin film thickness. Consequently, as the thickness of the thin film increases, the stress on the film surface is relaxed, the band gap decreases, and the crystallinity and conductivity are improved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.47-54
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• 2020

To develop the bright-vivid red- and yellow-inorganic fluorescent pigments with high luminescence properties, A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ inorganic pigments were synthesized by a water assisted solid state reaction (WASSR) method and a conventional solid state reaction method. Although impurity peaks corresponding to the AVO₃ and AV₃O₈ (A = K, Rb, and Cs) were observed in all samples prepared, the trigonal structure A₃V₅O₁₄ (A = K and Rb) and orthorhombic structure Cs₂V₄O₁₁ were successfully obtained as a main phase. These inorganic pigments showed the broad absorption band (under 550 nm) originated from CT transitions of VO₄ polyhedron, and the strong broad red- and green-emission bands due to ³T₂ → ¹A₁ and ³T₁ → ¹A₁ transitions of the [VO₄]^3- group. The A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ pigments showed a bright-vivid red- and yellow-body color, where the a* values of the A₃V₅O₁₄ (A = K and Rb) were +35.5 and +45.9, respectively, and b* value of Cs₂V₄O₁₁ pigments was +50.3. The L* values of the A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ inorganic pigments were over +45. These results indicate that the A₃V₅O₁₄ (A = K and Rb) and Cs₂V₄O₁₁ inorganic pigments could be an attractive candidate as a bright-vivid red- and yellow inorganic pigments.

• Journal of the Korea Organic Resources Recycling Association
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• v.30 no.3
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• pp.5-12
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• 2022

This study suggests the effective recycling method of sludge waste from various industrial fields to synthesize uniform colloidal silica nanoparticles. In detail, polymers are removed from the sludge waste to attain sludge-extracted silica (s-SiO₂) micron-sized particles, and ammonia assisted sonication is applied to s-SiO₂, which has effectively extracted the silanol precursor. The nano-sized silica (n-SiO₂) particles are successfully synthesized by a typical sol-gel method using silanol precursor. Also, the yield amounts of n-SiO₂ are determined by the function of s-SiO₂ etching time. Finally, n-SiO₂-based slurry is synthesized for the practical CMP application. As a result, rough-surfaced semiconductor chip is successfully polished by the n-SiO₂-based slurry to exhibit the mirror-like clean surface. In this regard, sludge wastes are successfully prepared as valuable semicondutor grade materials.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.51-55
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• 2007

This paper investigates the subthreshold behavior of Fin Field Effect Transistor (FinFET). The FinFET is considered to be an alternate MOSFET structure for the deep sub-micron regime, having excellent device characteristics. As the channel length decreases, the study of subthreshold behavior of the device becomes critically important for successful design and implementation of digital circuits. An accurate analysis of subthreshold behavior of FinFET was done by simulating the device in a 3D process and device simulator, Taurus. The subthreshold behavior of FinFET, was measured using a parameter called S-factor which was obtained from the $In(I_{DS})\;-\;V_{GS}$ characteristics. The value of S-factor of devices of various fin dimensions with channel length $L_g$ in the range of 20 nm - 50 nm and with the fin width $T_{fin}$ in the range of 10 nm - 40 nm was calculated. It was observed that for devices with longer channel lengths, the value of S-factor was close to the ideal value of 60 m V/dec. The S-factor increases exponentially for channel lengths, $L_g\;<\;1.5\;T_{fin}$. Further, for a constant $L_g$, the S factor was observed to increase with $T_{fin}$. An empirical relationship between S, $L_g$ and $T_{fin}$ was developed based on the simulation results, which could be used as a rule of thumb for determining the S-factor of devices.