• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1254-1257
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• 2004

Comparative study on the effects of $H_2$ vs. $O_2$ plasma pretreatment of gate oxide on the degradation phenomenon of p-channel low-temperature polysilicon (LTPS) thin-film transistors (TFTs) were performed. After high drain current stress (HDCS) with $V_{gs}$ = $V_{ds}$, the p-channel TFTs pretreated by $O_2$ plasma showed increased immunity to the degradation of device characteristics such as threshold voltage and maximum field effect mobility because of the higher binding energy of Si-O bond than that of Si-H bond. The investigation of degradation phenomenon of these parameters with the applied power suggests that self-heating can be the major cause of degradation of polysilicon TFTs.

• Korean Journal of Veterinary Research
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• v.36 no.2
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• pp.305-312
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• 1996

Cell volume regulatory mechanisms are usually disclosed by exposure of cell to anisotonic media. If a cell is suddenly exposed to hypotonic media, it swells initially like an osmometer but within minutes regains its original cell volume. This behavior has been labelled as regulatory cell volume decrease(RVD). RVD is believed to result from the loss of permeable ions through the membrane. In this study, we examined hypotonically induced changes in the membrance currents involved in RVD by using whole cell voltage clamp technique in the unfertilized hamster egg. At -40mV of the holding potential, the stationary current was maintained in the hamster egg exposed to isotonic solution composed of, mainly, 115mM NaCl and 40mM mannitol. Hypotonic solution was prepared by removing mannitol. Therefore, the concentrations of $Na^+$ and $Cl^-$ in this hypotonic media were the same as those in the isotonic solution. Following 30 to 60 sec after applying the hypotonic media to the egg, the inward current was evoked. This inward current was eliminated by $100{\mu}M$ 4-acetamido-4'-isothiocyanostil-bene-2,2'-disulfonic acid(SITS), an anion channel blocker, leaving the small outward current component. Further addition of 2mM $Ba^{2+}$, a broad $K^+$ channel blocker, completely abolished the small outward current left even in the presence of SITS during hypotonic stress. These results suggest that $K^+$ and $Cl^-$ move out of cells, resulting in RVD. To test the involvement of $Na^+$ in RVD, 20mM Na-isethionate was substituted for mannitol in isotonic media(135mM $Na^+$) and Na-isethionate (20mM) was freed the hypotonic solution. Only $Cl^-$ concentration in both isotonic and hypotonic media was kept constant at 115mM, whereas concentration of $Na^+$ was lowered in hypotonic solution to 115mM from 135mM in isotonic solution. Hypotonic medium induced the outward current in the egg equilibrated isotonically. This current was reduced by $100{\mu}M$ SITS but was augmented by 2 mM $Ba^{2+}$. In terms of RVD, these results imply that $Cl^-$ efflux is coupled with $K^+$, maybe for electroneutrality during hypotonic stress and/or with $Na^+$ via unknown transport mechanism(s). From the overall results, the hypotonic stress facilitates the movement of $Cl^-$ and $K^+$ out of the hamster egg to regain cellular volume with electroneutrality. If there exist a difference in $[Na^+]_0$ between isotonic and hypotonic solution, another transport mechanism concerned with $Na^+$ may, at least partly, participate in regulatory volume decrease.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.77-83
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• 1994

Characteristics of hot-electron-induced degradation by AC, DC was investigated for p-MOSFET's(W/L=25/l$\mu$m) with sub-10nm RTP-CVD gate oxides. It was confirmed that the surface channel p-MOSFET of a thinner gate oxide shows less degradation. Mechanisms for this effect were analyzed using a simple MOS Device degradation model. It was found that the number of generated electron traps(fixed charge) is determined by the amount of peak gate current, dependent of the gate oxide thickness, and the major cause of the smaller degradation in the thinner gate oxide devices is the lower hot electron trapping carriers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.526-532
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• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

• Journal of the Society of Naval Architects of Korea
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• v.30 no.4
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• pp.136-152
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• 1993

This study is intended to develop an accurate and efficient, analytical thin-walled beam model, and to analyze overall behavior of SWATH ship under repeated overloads. SWATH ship is idealized to a simple thin-walled beam of channel type. An analytical beam model is formulated by the stress component with geometrically(fully) nonlinear thin-walled beam and treated numerically by the Finite Element Method. An efficient cyclic plasticity model is also included, suitable for material nonlinear behavior under complex loading conditions. The local stress distribution can be very exactly represented and the material yielding propagation, easily traced. In addition, the local treatment of the effect of shear deformation improves the representation of deformation and shear stress distribution along the section contour. It is desirable to use the analytical thin-walled beam at initial design stage, and is needed to improve the practical thin-walled beam model advancing the current approach.

• Proceedings of the Korean Biophysical Society Conference
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• 2003.06a
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• pp.39-39
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• 2003

In our previous study, WEHI-231, an immature B cell line, showed intractable increase in [C $a^{2+}$]$_{c}$ after the B-cell receptor (BCR) ligation and treatment with 2-aminoethoxydiphenylborate (2-APB), which was never observed in Bal-17, a mature B cell line (Nam et al., 2003, FEBS Lett). In this study, a whole cell voltage clamp study revealed a specific expression of a novel type of $K^{+}$ current, namely voltage-independent background-type $K^{+}$ channels (IK-bg), in WEHI-231 cells. IK-bg was dramatically increase by the application of 2-APB (50 $\square$M), which induced severe hyperpolarization of WEHI-231 from -45 ㎷ to -90 ㎷, When dialyzed with $Mg^{2+}$ and ATP-free pipette solution, a spontaneous development of IK-bg and membrane hyperpolarization were observed. IK-bg was insensitive to classical $K^{+}$ channel blockers (TEA, glibenclamide, $Ba^{2+}$(1 mM)), whereas blocked by quinine and quinidine in a voltage-dependent manner ($IC_{50}$/=6~9 $\square$M at +60㎷). Phorbol myrstate, a PKC activator, decreased the amplitude of IK-bg. Extracellular acidification (pH 6.5) slightly inhibited IK-bg. Arachidonic acid, riluzole, or hyposmotic stress could not affect the IK-bg after the full development by the intracellular dialysis with Mg-ATP-free solution. In a cell-attached mode of single channel recording from WEHI231, we found two types of voltage-independent $K^{+}$ channels with unitary conductance of 300 pS and 120 pS, respectively. Both channels showed very short mean open times and their open probabilities were increase by the application of 2-APB. In Bal-17 cells, no such $K^{+}$ current was observed in 50 cells tested. In summary, WEHI-231 immature B cells express background $K^{+}$ channels. The pharmacological properties and the large unitary conductance suggest that novel types of two-pore domain $K^{+}$ channels (2-P-K channels) might be expressed in WEHI-231, which may provide an intriguing targets of signal transduction in the immature B lymphocytes.e B lymphocytes.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.126-126
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• 2018

최근 차세대 디스플레이인 flexible 하고 transparent 한 디스플레이 개발이 진행 중 이며, 이러한 디스플레이가 개발 되기 위해 백 플레인으로 사용되는 Thin Film Transistor (TFT) 또한 차세대 디스플레이 못지 않게 연구가 진행 되고 있다. 기존의 무기물을 기반으로 하고 Rigid한 TFT는 현재 많은 곳에 적용이 되어 사람들이 사용 하고 있다. 하지만 이미 시장은 포화상태이며 차세대 디스플레이 컨셉인 flexible 하고 투명한 것과 맞지 않는다. 그래서 유연하며 투명한 특성을 가진 TFT에 대한 연구가 활발히 진행 되고 있으며 많은 성과를 이루었다. 이러한 소자를 이용하여 훗날 Electronic-skin(e-skin)이라 부르는 전자 피부를 활용하여 실시간 모니터링 할 수 있는 헬스 케어 분야 등에 활용 가치 또한 높다. 현재 유연하며 투명한 기판 및 물질 개발에 많은 연구 개발이 진행 되고 있다. 하지만 유연한 기판을 사용하여 TFT를 제작한 후 stress나 bending에 대한 내구성과 안정성, 신뢰성 등이 무기물을 기반으로 한 TFT에 비해 좋지 않은 실정이다. 따라서 유연하며 투명한 기판을 사용한 TFT에 대한 안정성, 신뢰성 등을 확보하여야 한다. 본 연구 에서는 유연한 기판을 사용하여 TFT를 제작 한 후, TFT특성과 안정성을 확보하는 것을 목표로 실험을 진행하였다. 우리는 Mo전극과 Parylene 기판을 사용하여 유연한 TFT소자를 탑 게이트 구조로 제작 하였고 Rigid한 Glass기판 위에 Floating Process를 진행하기 위해 PVA층을 코팅 후 그 위에 Parylene을 CVD로 증착 하고 IGZO를 Sputter를 사용해 증착했다. Parylene은 DI Water 70도에서 Floating 공정을 통해 Rigid 기판에서 탈착 시켰다. 유연한 기판 위에 TFT를 제작 후 bending에 대한 특성 변화 및 안정성에 대한 측정을 실시하였다. Bending에 대한 특성 변화는 우수한 결과가 나왔지만 안정성 측정 중 Negative Bias Stress(NBS) 상에서 비정상적인 On Current Drop 현상이 발생 되었다. Parylene과 Channel층 사이 interface roughness로 인해 charge trap이 되고 이로 인해 On Current Drop 이라는 현상으로 나타났다. 그래서 우리는 Parylene 기판과 Channel 층간의 surface roughness를 개선하기 위한 방법으로 UV Treatment를 사용하였고 시간을 다르게 하여 surface 개선을 진행했다. Treatment 시간을 증가 시킴에 따라 Surface roughness가 많이 좋아 졌으며, Surface를 개선하고자 비정상적인 On Current Drop 현상이 없어졌으며 위 실험으로 Polymer의 surface roughness에 따라 TFT에 대한 안정성에 대한 신뢰성이 확보 될 수 있는 것을 확인 하였다.

• The korean journal of orthodontics
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• v.30 no.2 s.79
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• pp.197-204
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• 2000

[$K^+$]-selective ion channels were studied in excised inside-out membrane patches from human osteoblast-like cells (G292). Three classes of $K^+$channels were present and could be distinguished on the basis of conductance. Conductances were $270\pm27\;pS,\;113\pm12\;pS,\;48\pm8\;pS$ according to their approximate conductances in symmetrical 140 mM KCl saline at holding potential of -80 mV It was found that the small conductance (48 pS) $K^+$channel activation was dependent on membrane voltage. In current-voltage relationship, small conductance $K^+$channel showed outward rectification, and it was activated by the positive potential inside the membrane. In recordings, single channel currents were activayed by a negative pressure outside the membrane. The membrane pressure increased $P_{open}$ of the $K^+$ channel in a pressure-dependent manner. In the excised-patch clamp recordings, G292 osteoblast-like cells have been shown to contain three types of $K^+$ channels. Only the small conductance (48 pS) $K^+$channel is sensitive to the membrane stretch. These findings suggest that a hyperpolarizing current, mediated in part by this channel, may be associated with early events during the mechanical loading of the osteoblast. In G292 osteoblast-like cells, $K^+$channel is sensitive to membrane tension, and may represent a unique adaptation of the bone cell membrane to mechanical stress.

• KIEAE Journal
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• v.5 no.1
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• pp.43-49
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• 2005

People grow up and build up most of their character through living in dwelling space and have relax and refresh at home. Creating healthy dwelling space is being considered very important in architectural planning and design for providing comfortable living environment and improving quality of life. One of the properties of the earth is that the earth has a magnetic field associated with it- the Geomagnetic field. The geomagnetic field is produced by a combination of crustal rocks, external electric current systems that surround the earth that surround the earth and currents induced in the outer layers of the earth by magnetic field variations. Human beings have evolved with the background of magnetic field, they are accustomed to living in its presence. Geopathic stress occurs at geopathic zones where the geomagnetic field is disturbed. Geopathic zones exhibit magnetic charges. Geopathic zones are characterized by variations in geomagnetism, for the geomagnetic field is not uniform but exhibits many highly localized distortions, some random, some fairly regular. These occur in geological faults, caves and underground water channel. Many research papers and experiments of the western countries indicates that the geomagnetic field affects the people and living organism in dwellings. Therefore, it is necessary to investigate the geomagnetic field and people's response in living space. In this study the Health Hazard of geomagneic field in dwelling are studied through literature survey of related science field.