Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors |
Kim, Jonghwa
(School of Electrical Engineering, Kookmin University)
Choi, Sungju (School of Electrical Engineering, Kookmin University) Jang, Jaeman (School of Electrical Engineering, Kookmin University) Jang, Jun Tae (School of Electrical Engineering, Kookmin University) Kim, Jungmok (School of Electrical Engineering, Kookmin University) Choi, Sung-Jin (School of Electrical Engineering, Kookmin University) Kim, Dong Myong (School of Electrical Engineering, Kookmin University) Kim, Dae Hwan (School of Electrical Engineering, Kookmin University) |
1 | T. Kamiya et al., "Present status of amorphous In-Ga-Zn-O thin-film transistors," Sci. Technol. Adv. Mater., vol. 11, no. 4, p. 044305, Aug. 2010. DOI ScienceOn |
2 | T. Kamiya et al., "Device applications of transparent oxide semiconductors: Excitonic blue LED and transparent flexible TFT," J. Electroceramics, vol. 17, pp. 267-275, Dec. 2006. DOI |
3 | J. C. Park et al., "High performance amorphous oxide thin film transistors with self-aligned topgate structure," Tech. Dig. - Int. Electron Devices Meet. IEDM, pp. 191-194, Dec. 2009. |
4 |
M. Fujii et al., "Thermal Analysis of Degradation in |
5 | S. Urakawa et al., "Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect," Appl. Phys. Lett., vol. 102, p. 053506, Feb. 2013. DOI ScienceOn |
6 | S. H. Choi and M. K. Han, "Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress," Appl. Phys. Lett., vol. 100, no. 4, p. 043503, Jan. 2012. DOI ScienceOn |
7 | S. M. Lee et al., "Device instability under high gate and drain biases in InGaZnO thin film transistors," IEEE Trans. Device Mater. Reliab., vol. 14, no. 1, pp. 471-476, Mar. 2014. DOI ScienceOn |
8 |
M. Fujii et al., "Experimental and Theoretical Analysis of Degradation in |
9 | Atlas User's Manual, Silvaco, Santa Clara, CA, 2014. |
10 | S. C. Andrews et al., "Atomic-level control of the thermoelectric properties in polytypoid nanowires," Chem. Sci., vol. 2, pp. 706-714, Jan. 2011. DOI ScienceOn |
11 | K. Watanabe and T. Asano, "Self-heating of laterally grown polycrystalline silicon thin-film transistor," Jpn. J. Appl. Phys., vol. 48, no. 3S2, p. 03B005, Mar. 2009. |
12 | H. Im et al., "Effects of the defect creation on the bidirectional shift of threshold voltage with hump characteristics of InGaZnO TFTs under bias and thermal stress," Active-Matrix Flatpanel Displays and Devices, pp. 153-156, 2014. |
13 | S. Lee et al., "Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance-Voltage Characteristics," IEEE Electron Device Lett., vol. 31, no. 3, pp. 231-233, Feb. 2010. DOI ScienceOn |
14 | T. C. Fung et al., "2-D numerical simulation of high performance amorphous In-Ga-Zn-O TFTs for flat panel displays," Proc. AM-FPD '08, pp. 251-252, Jul. 2008. |
15 | O. K. B. Lui and P. Migliorato, "A New Generation-Recombination Model For Device Simulation Including The Poole-Frenkel Effect And Phonon-Assisted Tunneling," Solid-State Electronics, vol. 41, no. 4, pp. 575-583, 1997. DOI ScienceOn |
16 | A. Janotti and C. G. Van de Walle. "Oxygen vacancies in ZnO," Appl. Phys. Lett., vol. 87, no. 12, p. 122102, Sep. 2005. DOI ScienceOn |
17 | T. C. Chen et al., "Self-heating enhanced charge trapping effect for InGaZnO thin film transistor," Appl. Phys. Lett., vol. 101, no. 4, p. 042101, Jul. 2012. DOI ScienceOn |
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