• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.129-132
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• 2000

In this paper, a 1.8㎓ low noise amplifier was designed and simulated using 0.2$\mu\textrm{m}$ Si CMOS process. Noise characteristics and s parameters were extracted for the 300$\mu\textrm{m}$ gate width and 0.25$\mu\textrm{m}$ gate length NMOS transistors. For high available power gain, each stage was designed cascode type. It revealed available power gain of 23.5dB, noise figure of 2.0dB, power consumption of 15㎽ at 2.5V. It was shown that designed low noise amplifier had good RF performance. Designed Si CMOS LNA is expected to be used for RF front-end in transceiver.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.650-656
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• 2016

Voltage controlled oscillator (VCO) is widely used circuit component in high-performance microprocessors and modern communication systems as a frequency source. In present work, VCO designs using the different combination of NAND gates with three transistors and CMOS inverter are reported. Three, five and seven stages ring VCO circuits are designed. Coarse and fine tuning have been done using two different supply sources. The frequency with coarse tuning varies from 3.31 GHz to 5.60 GHz in three stages, 1.77 GHz to 3.26 GHz in five stages and 1.27 GHz to 2.32 GHz in seven stages VCO respectively. Moreover, for fine tuning frequency varies from 3.70 GHz to 3.94 GHz in three stages, 2.04 GHz to 2.18 GHz in five stages and 1.43 GHz to 1.58 GHz in seven stages VCO respectively. Results of power consumption and phase noise for the VCO circuits are also been reported. Results of proposed VCO circuits have been compared with previously reported circuits and present circuit approach show significant improvement.

• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.364-366
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• 2009

광 바이오 센서 시스템에서 Trans-Impedance amplifier (TIA)는 광검출기로부터 입력단으로 들어오는 미세한 전기 신호를 원하는 신호레벨까지 증폭하는 역할을 한다. TIA는 광 바이오 센서 시스템의 감도 (sensitivity)를 결정하는 매우 중요한 회로로 저잡음, 저전력, 낮은 입력 임피던스 등의 특성이 요구되어진다. 본 논문에서는 광 바이오 센서 시스템에서 요구되어 지는 저전력, 저잡음 성능을 구현하기 위하여 regulated cascode (RGC) TIA를 설계하였다. 본 연구에서는 기존 common gate (CG) 기법의 TIA에서 전류원 역할을 하는 current source를 저항으로 대체하고, local feedback stage를 이용하는 RGC TIA를 저잡음, 저전력 특성 및 회로 면적 감소의 장점을 갖도록 설계하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.116-126
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• 1994

In this paper, the switch-level fault simulator for CMOS circuits with a gate-to-drain/source short fault is implemented. A fault model used in this paper is based on the graphical analysis of the electrical characteristics of the faulty MOS devices and the conversion of the faulty CMOS circuit to the equivalent faulty CMOS inverter in order to find its effect on the successive stage. This technique is very simple and has the increased accuracy of the simulation. The simulation result of the faulty circuit using the implemented fault simulator is compared with the result of the SPICE simulation.

• Water for future
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• v.22 no.1
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• pp.91-98
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• 1989

This study was aimed to determine a discharge coefficient of flow through gate piers. The coefficient was Calbrated with water stage data observed during 1984 to 1987 at the Young San Estuary Dam. The coefficient is the function of the dimensionless parameters combined with the difference between up and down stream water level to down stream water depth ratio and water surface draw down ratio. From the verification with existing methods and actual drainages, drainages predicted by the relationship have the most consistency with the actual drainages, also Matthai's method can be used within the proposed condition originally.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.82-87
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• 2021

In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 ㎛ CMOS process.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.3
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• pp.35-41
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• 2013

An efficient multi-stage rectifier for wireless power transfer in deep implant medical devices is implemented using $0.18-{\mu}m$ CMOS technology. The presented three-stage rectifier employs a cross-coupled topology to boost a small input AC signal from the external device to produce a 1.2-1.5 V output DC signal for the implant device. The designed rectifier achieves a maximum measured power conversion efficiency of 70% at 13.56 MHz under the conditions of a low 0.6-Vpp RF input signal with a $10-k{\Omega}$ output load resistance.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.1-6
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• 2001

In this paper, a 1.5 V high-gain high-frequency CMOS complementary operational amplifier is presented. The input stage of op-amp is designed for supporting the constant transconductance on the Input stage by consisting of the parallel-connected rail-to-rail complementary differential pairs. And consisting of the class-AB rail-to-rail output stage using the concept of elementary shunt stage and the grounded-gate cascode compensation technique for improving the low PSRR which was a disadvantage in the general CMOS complementary input stage, the load dependence of open loop gain and the stability of op- amp on the output load are improved, and the high-gain high-frequency operation can be achieved. The designed op-amp operates perfectly on the complementary mode with the 180° phase conversion for a 1.5 V supply voltage, and shows the DC open loop gain of 84 dB, the phase margin of 65°, and the unity gain frequency of 20 MHz. In addition, the amplifier shows the 0.1 % settling time of .179 ㎲ for the positive step and 0.154 ㎲ for the negative step on the 100 mV small-signal step, respectively, and shows the total power dissipation of 8.93 mW.

• Journal of the Korean Institute of Gas
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• v.1 no.1
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• pp.81-86
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• 1997

This study is to estimate the possibility of accident in chemical plants from the analysis of system component which affects the occurrence of top event. Among the various risk assessment techniques, the Fault Tree Analysis which approaches deductively on the route of accident development was used in this study. By gate-by-gate method and minimal cut set, the qualitative and quantitative risk assessment for hazards in plants was performed. The probability of occurrence and frequency of top event was calculated from failure or reliability data of system components at stage of the quantitative risk assessment. In conclusion, the probability of accident was estimated according to logic pattern based on the Fault Tree Analysis. And the failure path which mostly influences on the occurrence of top event was found from Importance Analysis.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.46-54
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• 1984

A silicon-gate n-well CMOS process with 3 $\mu$m gate length was developed and its possibility for the applications was discussed,. Threshold voltage was easily controlled by ion implantation and 3-$\mu$m gate length with 650 $\AA$ oxide shows ignorable short channel effect. Large value of Al-n+ contact resistance is one of the problems in fabrications of VLSI circuits. Transfer characteristics of CMOS inverter is fairly good and the propagation delay time per stage in ring oscillator with layout of (W/L) PMOS /(W/L) NMOS =(10/5)/(5/5) is about 3.4 nsec. catch-up occurs on substrate current of 3-5 mA in this process and critically dependent on the well doping density and nt-source to n-well space. Therefore, research, more on latch-up characteristics as a function of n-well profile and design rule, especially n+-source to n-well space, is required.