• 제목/요약/키워드: Stack Voltage

검색결과 246건 처리시간 0.046초

Two-Stage Charge Equalization Scheme for Hybrid Electric Vehicle Lithium-Ion Battery Cells

  • Park, Hong-Sun;Kim, Chong-Eun;Moon, Gun-Woo;Lee, Joong-hui
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2007년도 하계학술대회 논문집
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    • pp.241-243
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    • 2007
  • Two-stage charge equalization scheme for HEV lithium-ion battery string is proposed with the optimal power rating design rule in this paper, where in the first stage the over charged energy of higher voltage cells is drawn out to the single common output capacitor and then, that discharged energy is recovered into the overall battery stack in the second stage. To achieve charge equalization of sort, the conventional flyback DC/DC converters of low power and minimized size are employed. The industrial sample employing both the proposed two-stage cell balancing scheme and the optimal power rating design rule shows good cell balancing performance with reduced size as well as low voltage stresses of the electronic devices.

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캐스캐이드형 연료전지 모듈 벤트 로직 최적화 (Optimization of Vent Logic for Cascade Type Fuel Cell Module)

  • 임종구;박종철;권기욱;신현길
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 추계학술대회 초록집
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    • pp.87.2-87.2
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    • 2011
  • Many type of fuel cell stacks have been developed to improve the efficiency of reactants usage. The cascade type fuel cell stack using dead end operation is able to attain above 99% usage of hydrogen and oxygen. It is sectionalized to several parts and the residual reactants which are used previous parts would be supplied again to next parts which have less number of cells in dead end operation stack. The oversupply of reactants which is usually 120%~150% of the theoretical amount to generate current for preventing the flooding effect could be provided to each part except the last one. The final section which is called monitoring cells is supposed to be supplied insufficient the fuel or oxidant that would have some accumulated inert gas from former parts. It makes some voltage drop in the part and the fresh reactants must be supplied to the part for recovering it by venting the residual gas. So the usage of fuel and oxidant is depend on the time and frequency of opening valves for venting of residual gas and it is important to optimize the vent logic for achieving higher usage of hydrogen and oxygen. In this research, many experiments are performed to find optimal condition by evaluating the effect of time and frequency under several power conditions using over 100kW class fuel cell module. And the characteristics of the monitoring cells are studied to know the proper cell voltage which decide the condition of opening the vent valve for stable performance of the cascade type fuel cell module.

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Physics-based Algorithm Implementation for Characterization of Gate-dielectric Engineered MOSFETs including Quantization Effects

  • Mangla, Tina;Sehgal, Amit;Saxena, Manoj;Haldar, Subhasis;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권3호
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    • pp.159-167
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    • 2005
  • Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

수동형 직접 메탄올 연료전지의 특성 연구 (Characterization of Passive Direct Methanol Fuel Cells)

  • 고백균;김영진;오인환;홍성안;하흥용
    • 전기화학회지
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    • 제6권1호
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    • pp.23-27
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    • 2003
  • 본 연구는 휴대용 전원으로 사용 가능성이 높은 소형 직접메탄을 연료전지의 단위전지와 모노폴라 스택의 운전특성을 살펴본 것이다. 공기와 메탄올이 외부에서 강제로 공급되지 않는 수동형(passive)의 운전조건에서 최적 메탄을 농도는 4M이었으며, 촉매 담지량도 $8mg/cm^2$에서 가장 높은 성능을 나타내었다. 상온 상압 수동형 조건에서 얻은 최대 성능은 $55mW/cm^2$이었다. 6개의 단전지로 이루어진 모노폴라 스택에서는 셀간의 성능차이는 크게 나타나지 않았으며, 출력밀도는 $37mW/cm^2$이고, 1W의 출력을 보였다. 또한, 16셀로 구성된 2.4W급 모노폴라 스택을 제작하여 모형 자동차에 장착하고 시범 운전을 성공적으로 수행하였다.

Investigation on Etch Characteristics of FePt Magnetic Thin Films Using a $CH_4$/Ar Plasma

  • Kim, Eun-Ho;Lee, Hwa-Won;Lee, Tae-Young;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.167-167
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    • 2011
  • Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

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The Influence of $O_2$ Gas on the Etch Characteristics of FePt Thin Films in $CH_4/O_2/Ar$ gas

  • Lee, Il-Hoon;Lee, Tea-Young;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.408-408
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    • 2012
  • It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

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Etch Characteristics of MgO Thin Films in Cl2/Ar, CH3OH/Ar, and CH4/Ar Plasmas

  • Lee, Il Hoon;Lee, Tea Young;Chung, Chee Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.387-387
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    • 2013
  • Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

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FTA를 이용한 볼트 유도가열시스템의 고장 및 전기화재 분석 (Analysis of Failure and Electrical Fire for Bolt Induction Heating System Using FTA)

  • 김두현;김성철;엄한얼;강문수;정천기
    • 한국안전학회지
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    • 제36권4호
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    • pp.12-19
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    • 2021
  • This paper presents a safety assessment method for FTA-based induction heating systems; the failures and causes of electrical fire are first analyzed for each part and module qualitatively, and methods to manage high probabilities of failure and electrical fire are considered, thereby improving the reliability of the induction heating system. The cumulative importance value (ACC) of the minimal cut set is drawn by setting failure as the top event, and STACK and SMPS are observed to account for about 70% of the induction heating system failures. Thus, intensively managing the basic events contained in the minimal cut set of failures for STACK and SMPS is expected to provide effective and stable operation of the induction heating system. When electrical fire is set as the top event, the STACK percentage is 90%. Accordingly, the current IGBT is changed to a FET to increase the applied voltage and prevent induction heating system failure, and a heat sink plane is installed to prevent FET heating caused by switching, thereby preventing an electrical fire. By classifying the parts and modules of the induction heating system in detail and by applying FTA based on actual failure rates and relevant data, more practical and reasonable results may be expected. Hence, continuous research must be conducted to ensure safety when using induction heating systems.

연료전지/배터리 하이브리드 차량 개발 (Development of Fuel Cell/Battery Hybrid Vehicle)

  • 손영준;박구곤;임성대;엄석기;양태현;윤영기;이원용;김창수
    • 한국전기화학회:학술대회논문집
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    • 한국전기화학회 2005년도 수소연료전지공동심포지움 2005논문집
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    • pp.103-110
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    • 2005
  • Fuel cell systems are consisted of various parts, for example fuel cell stack, fuel supplier, electrical converters, controllers and so on. Each components of system should have appropriate specification for their applications as well as simplicity. Because thermal load can be managed simply by using fans without any water cooling system, the air-cooled PEMFC is widely used in sub kW and around 1kW systems. The performance of an air-cooled system is highly dependent on ambient temperature and humidity. In this paper, the air-cooled PEMFC systems are developed and investigated to study the operating characteristics in the aspect of the thermal and water coupled management by the control of the axial fans and compressors. Various experiments were also conducted to get the cell voltage distribution, the relative humidity of the reactant gas and the thermal management by axial cooling fans, which cannot be observed in single cell experiment. After then, as practical applications, portable fuel cell system and a hybrid electric cart were successfully integrated and operated by using this air-cooled stack.

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Development of Bipolar Plate Stack Type Microbial Fuel Cells

  • Shin, Seung-Hun;Choi, Young-jin;Na, Sun-Hee;Jung, Seun-ho;Kim, Sung-hyun
    • Bulletin of the Korean Chemical Society
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    • 제27권2호
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    • pp.281-285
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    • 2006
  • Microbial fuel cells (MFC) stacked with bipolar plates have been constructed and their performance was tested. In this design, single fuel cell unit was connected in series by bipolar plates where an anode and a cathode were made in one graphite block. Two types of bipolar plate stacked MFCs were constructed. Both utilized the same glucose oxidation reaction catalyzed by Gram negative bacteria, Proteus vulgaris as a biocatalyst in an anodic compartment, but two different cathodic reactions were employed: One with ferricyanide reduction and the other with oxygen reduction reactions. In both cases, the total voltage was the mathematical sum of individual fuel cells and no degradation in performance was found. Electricity from these MFCs was stored in a supercapacitor to drive external loads such as a motor and electric bulb.