• 제목/요약/키워드: Stack Thickness

검색결과 91건 처리시간 0.024초

A Study on the Fluoro-polymer Composite Coatings for Protecting the Corrosion of Fossil-fuel Power Plants

  • Kang, Min Soo;Lee, Byung Seung;Chang, Hyun Young;Jin, Tae Eun;So, Il Soo
    • Corrosion Science and Technology
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    • 제6권2호
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    • pp.62-67
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    • 2007
  • Several heavy duty coatings at an every kind industry facilities to various systems currently have been applied review to the many industry fields. Corrosion-protective characteristics in the case of novolac epoxy among them and unsaturated polyester have been applied most widely. epoxy and flake heavy duty coatings are applied for such reason in an every kind facilities(stack, FGD, cooler, chemical tank etc) of a fossil-fuel power plants Cases of the fossil-fuel power plants are exposed to more severe corrosion environment compared with other facilities and It is difficult to display the performance of long-term method at apply to be the partial. Our study shows fluoro-polymer composite coating method to overcome of the limit. The comparison did previous method and heavy duty coating about FGD plants most at a corrosion environment among fossil-fuel power plants. Additionally, other facilities examined different heavy duty method. The design mode of fluoro-polymer composite coating according to an every kind facilities show extensive methods that are characteristic revelation of film(top, middle and primer layer) composition of the paint, film thickness in accordance with a facilities corrosion and the corrosion protective effectiveness to come into being use fluoro-polymer composite with heavy duty paint(epoxy).

Through Silicon Stack (TSS) Assembly for Wide IO Memory to Logic Devices Integration and Its Signal Integrity Challenges

  • Shin, Jaemin;Kim, Dong Wook
    • 한국전자파학회지:전자파기술
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    • 제24권2호
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    • pp.51-57
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    • 2013
  • The current expanding mobile markets incessantly demands small form factor, low power consumption and high aggregate throughput for silicon-level integration such as memory to logic system. One of emerging solution for meeting this high market demand is 3D through silicon stacking (TSS) technology. Main challenges to bring 3D TSS technology to the volume production level are establishing a cost effective supply chain and building a reliable manufacturing processes. In addition, this technology inherently help increase number of IOs and shorten interconnect length. With those benefits, however, potential signal and power integrity risks are also elevated; increase in PDN inductance, channel loss on substrate, crosstalk and parasitic capacitance. This paper will report recent progress of wide IO memory to high count TSV logic device assembly development work. 28 nm node TSV test vehicles were fabricated by the foundry and assembled. Successful integration of memory wide IO chip with less than a millimeter package thickness form factor was achieved. For this successful integration, we discussed potential signal and power integrity challenges. This report demonstrated functional wide IO memory to 28 nm logic device assembly using 3D package architecture with such a thin form factor.

Resistance Switching Characteristics of Metal/TaOx/Pt with Oxidation degree of metal electrodes

  • Na, Hee-Do;Kim, Jong-Gi;Sohn, Hyun-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.187-187
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    • 2010
  • In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.

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유무기 하이브리드 태양전지 적용을 위한 탠덤형 비정질 실리콘 태양전지 최적화 기술 (Optimization Amorphous Silicon Tandem Cell for an applying Inorganic-organic Hybrid Cell)

  • 박진주;유상민
    • Current Photovoltaic Research
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    • 제12권3호
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    • pp.80-85
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    • 2024
  • Purpose of higher conversion efficiencies, thin-film silicon solar cells based on amorphous silicon have been developed with a multiple-stack structure to fully utilize the absorption spectrum. Microcrystalline silicon (µc-Si) is commonly used in the bottom cell of such tandem junction solar cells, offering improved conversion efficiencies. However, the requirement for a thicker absorption layer to generate sufficient photocurrent presents challenges, primarily due to the lower absorption coefficient of µc-Si, resulting in longer deposition times and greater material thickness. To address these limitations, we propose the development of inorganic-organic hybrid solar cells by integrating a-Si tandem with solution-processed organic photovoltaic cells (OPVs), using low-bandgap semiconducting polymers. The OPVs have garnered significant attention as promising candidates for next-generation photovoltaic technology. As part of this effort, we have optimized the a-Si tandem cell by exploring different materials for a tunnel recombination layer and high quality intrinsic layers. The hybrid approach combines the advantages of both inorganic and organic materials, potentially offering a pathway towards more efficient and cost-effective solar cell solutions.

유도결합플라즈마를 이용한 TaN 박막의 식각 특성 (Etching Property of the TaN Thin Film using an Inductively Coupled Plasma)

  • 엄두승;우종창;김동표;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.104-104
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    • 2009
  • Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

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Atomic layer chemical vapor deposition of Zr $O_2$-based dielectric films: Nanostructure and nanochemistry

  • Dey, S.K.
    • E2M - 전기 전자와 첨단 소재
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    • 제16권9호
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    • pp.64.2-65
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    • 2003
  • A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{+}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{+}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

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평판형 SOFC 단전지 전극계면에서 발생되는 응력장에 관한 기초적 연구 (A Basic Study on the Stress Field in the Electrode Interface of the Planar SOFC Single Cell)

  • 박철준;권오헌;강지웅
    • 한국안전학회지
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    • 제28권5호
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    • pp.5-9
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    • 2013
  • Recently, eco-friendly sources of energy by fuel cells that use hydrogen as an energy source has emerged as the next generation of energy to solve the problem of environmental issues and exhaustion of energy. A solid oxide fuel cell(SOFC) classified based on the type of ion transfer mediator electrolyte has actively being researched. However, the reliability according to the thermal cycle is low during the operation of the fuel cell, and deformation problem comes from the difference in thermal expansion coefficient between the electrode material, the components made of ceramic material is also brittle, which means disadvantages in terms of the strength. Therefore, in this study, considering the states of the manufacturing and operating of SOFC single cells, the stress analyses in the each of the interfacial layer between the anode, electrolyte and the cathode were performed to get the basic data for reliability assessment of SOFC. The obtained results show that von Mises stress according to the thickness direction on operating state occurred maximum stress value in the electrolyte layer. And also the stresses inside the active area on a distance of 1 ${\mu}m$ from the electrode interface were estimated. Futhermore the evaluation was done for the variation of the stress according to the stage of the operation divided into three stages of manufacturing, stack, and operating.

A Quantitative Study of the Quality of Deconvolved Wide-field Microscopy Images as Function of Empirical Three-dimensional Point Spread Functions

  • Adur, Javier;Vicente, Nathalie;Diaz-Zamboni, Javier;Izaguirre, Maria Fernanda;Casco, Victor Hugo
    • Journal of the Optical Society of Korea
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    • 제15권3호
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    • pp.252-263
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    • 2011
  • In this work, for the first time, the quality of restoration in wide-field microscopy images after deconvolution was analyzed as a function of different Point Spread Functions using one deconvolution method, on a specimen of known size and on a biological specimen. The empirical Point Spread Function determination can significantly depend on the numerical aperture, refractive index of the embedding medium, refractive index of the immersion oil and cover slip thickness. The influence of all of these factors is shown in the same article and using the same microscope. We have found that the best deconvolution results are obtained when the empirical PSF utilized is obtained under the same conditions as the specimen. We also demonstrated that it is very important to quantitatively check the process' outcome using several quality indicators: Full-Width at Half-Maximum, Contrast-to-Noise Ratio, Signal-to-Noise Ratio and a Tenengrad-based function. We detected a significant improvement when using an indicator to measure the focus of the whole stack. Therefore, to qualitatively determinate the best deconvolved image between different conditions, one approach that we are pursuing is to use Tenengrad-based function indicators in images obtained using a wide-field microscope.

농소읍 부근 울산단층대에서의 P파 및 S파 탄성파 조사 연구 (P- and S-wave seismic studies in the Ulsan fault zone near Nongso-Eup)

  • 이창민;김기영
    • 한국지구물리탐사학회:학술대회논문집
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    • 한국지구물리탐사학회 2006년도 공동학술대회 논문집
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    • pp.95-100
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    • 2006
  • 울산단층의 지하구조를 확인하기 위하여 울산시 농소읍 부근에서 750 m의 측선을 따라 탄성파 자료를 획득하였다. 5 kg의 해머를 지표에 비스듬히 설치된 알루미늄 플레이트에 타격하여 P파와 S파를 동시에 발생시켰으며, 3 m 간격의 10 Hz 3성분 지오폰 16개로 수신하였다. P파 굴절파 자료는 토모그래피 방식으로 역산하였으며, 반사파 자료는 통상적인 처리과정에 경사경로시차보정, 구조보정 등의 과정을 추가하였다. P파 굴절파로부터 구한 속도정보와 S파 및 P파 반사파 중합단면을 해석하여 4개 층을 구분하였다. 상부로부터 각 층의 P파 속도는 $300{\sim}1100\;m/s$, $1100{\sim}1700\;m/s$, $1700{\sim}2700\;m/s$, 2700 m/s 이상이고, 상부 3개 층의 두께는 각각 평균 3.9 m, 5.9 m, 4.4 m 정도이다. S파 중합단면은 10 m 이내의 지질구조 규명에 효과적이었다.

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CFRP 적용을 위한 Carbon NCF Prepreg 제작 및 구조해석을 활용한 적층패턴 최적설계 연구 (A Study of Carbon NCF Prepreg Manufacturing and Stacking Pattern Optimal Design Using Structure Analysis)

  • 김신;신헌충;하성규
    • Composites Research
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    • 제33권1호
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    • pp.13-18
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    • 2020
  • 기존 소방구조용 작업차에서 문제가 되고 있는 협소도로 진입의 어려움 및 구조를 위한 신속한 작업 전개 한계성을 극복하기 위한 목적으로 소형 구조작업차 연구가 진행되고 있으며 이에 따른 경량화 연구를 진행하였다. 본 연구에서는 소방 구조 작업차 5번 붐은 288 mm(W) × 299 mm(D) × 3,691 mm(L)이며 이에 걸리는 최대 하중은 876 kg이고, Steel Boom의 Thickness는 3 mm이다. Steel (STRENX960)을 CFRP 복합재로 변경하여 제작하기 위해 Carbon Fiber NCF (±45°, 2축)를 직조하고 이를 NCF Prepreg로 제작하였고 경량화와 강성, 강도를 극대화할 수 있는 최적설계 패턴을 제시하였다. 이 과정은 구조해석을 바탕으로 설계하였고, NCF Prepreg의 (±45°)가 비틀림에 미치는 영향을 확인했으며 적층패턴(b)로 최적설계 하였다. 기존 Steel Boom과 UD방향으로 적층한 CFRP Boom과 동등하거나 이상의 수준에 대한 적층패턴을 최적화하였고, 최종적으로 Steel 대비 약 49.6% 무게에 대한 경량화 효과를 확인하였다.