• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.3
• /
• pp.226-232
• /
• 2023

As a potential alternative to flash memory, HfO₂/Al₂O₃ stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO₂/Al₂O₃ stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO₂ layer, the memory window of the 5-layered stack increased by 152.4% after O₂ annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO₂/Al₂O₃ stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O₂ and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.2
• /
• pp.76-82
• /
• 2003

The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.1
• /
• pp.52-62
• /
• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.23 no.1
• /
• pp.34-40
• /
• 2015

A stack in the proton exchange membrane fuel cell (PEMFC) consists of bipolar plates, a membrane electrode assembly, a gas diffusion layer, a collector and end plates. High current density is usually obtainable partially from uniform temperature distribution in the fuel cell. A size optimization method considering the thermal expansion effect of stacked plates was developed on the basis of finite element analyses. The thermal stresses in end, bipolar, and cooling plates were calculated based on temperature distribution obtained from thermal analyses. Finally, the optimization method was applied and optimum thicknesses of the three plates were calculated considering both fastening bolt tension and thermal expansion of each unit cell (72 cells, 5kW). The optimum design considering both thermal and mechanical loads increases the thickness of an end plate by 0.64-0.83% the case considering only mechanical load. The effect can be enlarged if the number of stack increases as in an automotive application to 200-300 stacks.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.5 no.6
• /
• pp.1128-1135
• /
• 2001

In this paper, a new HSG-Si formation technology, "seeding method', which employs Si$_2$H$_{6}$-molecule irradiation and annealing, was applied for realizing 64Mbit DRAMs. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous-doped amorphous-Si electrode. The new HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors. In this technique, optimum process conditions of the phosphorous concentration, storage polysilicon deposition temperature and thickness of hemispherical grain silicon are in the range of 3.0-4.0E19atoms/㎤, 53$0^{\circ}C$ and 400$\AA$, respectively. In the 64M bit DRAM capacitor using optimum process conditions, limit thickness of dielectric nitride is about 65$\AA$.

• Advances in Automotive Engineering
• /
• v.1 no.1
• /
• pp.41-59
• /
• 2018

In the study, investigation of fiber- reinforced composite materials that can be an alternative to conventional steel was performed by finite element analysis with the help of software. Steel and composite materials have been studied on a four axle truck chassis model. Three-dimensional finite element model was created with software, and then analyzes were performed. The analyses were performed for static and dynamic/fatigue cases. Fatigue cases are formed with the help of design spectra model and fatigue analyses were performed as static analyses with this design spectra. First, analyses were performed for steel and after that optimization analyses were made for the AS4-PEEK carbon fiber composite and Eglass-Epoxy fiber composite materials. Optimization of composite material analyzes include determining the total laminate thickness, thickness of each ply, orientation of each ply and ply stacking sequence. Analyzes were made according to macro mechanical properties of composite, micromechanics case has not been considered. Improvements in weight reduction up to %50 provided at the end of the composite optimization analyzes with satisfying stiffness performance of chassis. Fatigue strength of the composite structure depends on various factors such as, fiber orientation, ply thickness, ply stack sequence, fiber ductility, ductility of the matrix, loading angle. Therefore, the accuracy of theoretical calculations and analyzes should be correlated by testing.

• Geophysics and Geophysical Exploration
• /
• v.26 no.4
• /
• pp.199-210
• /
• 2023

The physical properties of rocks in reservoirs change after CO₂ injection, we modeled a reservoir with a transition zone within which the physical properties change linearly. The function of the Wolf reflection coefficient consists of the velocity ratio of the upper and lower layers, the frequency, and the thickness of the transition zone. This function can be used to estimate the thickness of a reservoir or seafloor transition zone. In this study, we propose a method for predicting the thickness of the transition zone using deep learning. To apply deep learning, we modeled the thickness-dependent Wolf reflection coefficient on an artificial transition zone formation model consisting of sandstone reservoir and shale cap rock and generated time-frequency spectral images using the continuous wavelet transform. Although thickness estimation performed by comparing spectral images according to different thicknesses and a spectral image from a trace of the seismic stack did not always provide accurate thicknesses, it can be applied to field data by obtaining training data in various environments and thus improving its accuracy.

• The Journal of Engineering Geology
• /
• v.29 no.2
• /
• pp.153-162
• /
• 2019

Rapid variations in the geometry (i.e., thickness) of the refractor and low velocities affect greatly the imaging of the reflectors of land seismic data. Conventional solutions to obtain the weathering models utilizes first break picking method, which requires time consuming steps and causes the human error in picking the first arrivals. A new interferometric approach (interferometric refraction statics, IRS) which utilizes the first arrival signal (S/N enhanced by refraction convolution stack) instead of first break picking, is tested in this study to the synthetic data from the velocity structure provided by surface geophysics (refraction, MASW) and borehole geophysics (tomography, SPS logging) for the Cheongju granitic bodies. The results of IRS approach are found to be better than the ones from conventional first break picking in terms of continuities and horizontal resolution of the reflectors. The unresolved long-wavelength statics in brute stack are much removed by IRS weathering correction and the overlying refractors (the base of shallow weathering zone) are incidentally delineated in the refraction convolution stack.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.18 no.2
• /
• pp.251-258
• /
• 2023

In this paper, we propose DLP(Dual Linear Polarization) stack antenna for private network. The proposed antenna has general stack structure and design airgap between two substrate to obtain the maximum gain. Also, to improve cross polarization isolation, two feeding port is designed to separate for each substrate. The size of each patch antenna is 17.80 mm(W1)×16.70 mm(L1) for lower patch and 18.56 mm(W2)×18.73 mm(L2) for upper patch, which is designed on the FR-4 substrate which thickness (h) is 1.6 mm, and the dielectric constant is 4.3, and which is 40.0 mm(W)×40.0 mm(L) for total size of substrate. From the fabrication and measurement results, bandwidths of 100 MHz (4.74 to 4.84 GHz) for feeding port 1, and 150 MHz (4.67 to 4.82 GHz) for feeding port 2 are obtained on the basis of -10 dB return loss and transmission coefficient S21 is got under the -20 dB. Also, cross polarization isolation between each feeding port obtained

• Korean Journal of Materials Research
• /
• v.10 no.1
• /
• pp.90-96
• /
• 2000

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.