• 전자공학회논문지D
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• 제35D권5호
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

• 한국결정성장학회지
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• 제7권2호
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• pp.292-300
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• 1997

150~$190^{\circ}C$에서 2시간 동안의 수열반응을 통해 입방체 모양을 갖는 0.5~5 $\mu\textrm{m}$의 ($Pb_{0.95}Sr_{0.05})(Zr_{0.52}Ti_{0.48})O_3$ 결정분말을 제조하였다. 실험결과 반응온도가 증가함에 따라 PSZT의 핵생성과 결정성장 속도가 빨라져서 평균입경이 커짐을 알 수 있었다. 광화제로 사용한 KOH의 농도를 증가시켜 평균입경이 작고 입도분포의 폭이 좁은 분말을 얻을 수 있었으며 결정화가 일어나는 반응온도를 낮출 수 있었다. Zr/Ti의 조성비가 0.40/0.60에서 0.60/0.40으로 증가함에 따라 PSZT의 주요 결정상은 정방정의 결정상에서 능면정의 결정상으로 전이되었다.

• 한국초전도ㆍ저온공학회논문지
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• 제1권2호
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• pp.1-7
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• 1999

we evaluated the effects of joining process such as contact method. shape of joined area and pressure on the electrical and mechanical properties of Bi-2223 superconducting tape, Specifically. the current capacity of the jointed tape was measured as a function of uniaxial pressure. and the thermal shock, bonding strength and the thermal of the tape were evaluated and correlated to the microstructural evolution. It was observed that the current capacity was significanrly dependent on the uniaxial pressure The jointed tape, fabricated with a pressure of 1,000-1,600 Mpa. showed the highest value of current capacity results from improvements in core density, contacting area and grain alignment, ect. In addition, the strength of jointed tape was measured to be 86 Mpa, which is about 88% of the unjoined ape's strength. The irreversible strain($\varepsilon$irrev) for the jointed tape was measured to be 0.1%, smaller than that of unjoined tape ($\varepsilon$irrev= 0.3%). The decrease in the strength and irreversible strain for jointed tape is believed to be due to the irregular geometry/morphology of the transition area of the tape.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2003년도 하계학술대회
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• pp.286-288
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• 2003

In this paper, in order to obtain a large differential phase shift with a little change in applied voltage, a ferroelectric reflective load circuit has been designed on top of barium strontium titanate $(Ba,Sr)TiO_3$ [BST] thin film. The design of the ferroelectric reflection-type phase shifter is based on a reflection theory of terminating circuit, which has a reflection-type analogue phase shifter with two ports terminated in symmetric phase-controllable reflective networks. To achieve large amounts of phase shift in low bias-voltage range, the effects of change of capacitance and transmission line connected with two coupled ports of a 3-dB $90^{\circ}$ branch-line hybrid coupler have been investigated. A large phase shift with a small capacitance change in the parallel terminating circuit has been demonstrated in the paper.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1218-1221
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• 2004

Bi2212 superconducting thin films fabricated by using the ion Beam Sputtering Method. As a result, although the composition of Bi2212 was set up, the phase of Bi2201, Bi2212 and Bi2223 was formed. The formation area of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.167-167
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• 2008

The barium strontium calcium titanate powders were prepared by sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. And we investigated the structural and dielectric properties of BSCT thick films with the variation of sintering temperature. As a result of thermal analysis, BSCT polycrystalline perovskite phase was formed at around $660^{\circ}C$. The results of X-ray diffraction analysis were showed a cubic perovskite structure without presence of the second phase in all BSCT thick films. The average grain size and the thickness of the specimen sintered at $1450^{\circ}C$ were about 1.6 mm and 45 mm, respectively. The relative dielectric constant increased and the dielectric loss decreased with increasing the sintering temperature, the values of the BSCT thick films sintered at $1450^{\circ}C$ were 5641 and 0.4% at 1kHz, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권3호
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• pp.141-157
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• 2001

Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.150-151
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• 2003

In the past years, a giant magnetoresistance (GMR) effect found in perovskite-like structured materials has attracted considerable attention among scientists and manufacturers, since, a practical point of view, the capacity of producing magnetic and sensing sensors. In a stream of this interest, further efforts to understand the underlying mechanism that leads to the GMR effect relative to the correlation between transport and magnetic properties, have been extensively devoted. In these cases, spin-glass-like behaviors are ascribed to the frustration of random competing exchange interactions, namely the ferromagnetic double-exchange interaction between Co$\^$3+/ (or Mn$\^$3+/) and Co$\^$4+/(or Mn$\^$4+/) and the antiferromagnetic one like spins. Noticeably, the distinction of spin-glass region from cluster-glass one, involved in the remarkable changes in transport and magnetic properties at a critical value of doping concentration, was observed. Magnetic anomalies in zero-field-cooled (ZFC) magnetization as well as ac magnetic susceptibility below Curie temperature T$\sub$c/ and the charge/orbital fluctuation were also realized. In this work, we present a study of magnetic properties of a deficient manganese perovskites system of La$\sub$0.6/Sr$\sub$x/MnTi$\sub$y/O$_3$, and particularly provide its new magnetic phase diagram.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2003년도 추계학술발표회
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• pp.107-111
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• 2003

Estuary of Nakdong river area is composed of unconsolidated sediments including clays that are deposited varying from 40 to 70m thick. The purpose of research is the knowledge of the correlation between engineering properties and mineralogy of clay sediments. The correlation analysis carry out multiple regression that have independent variables (Engineering properties) and dependent variables (mineralogy, geochemistry). Engineering properties of clay are correlated with the mineral compositions and geochemical characteristics. The result of the analysis is Wn=-0.6 Feldspar ＋ 1.1 pH ＋ 0.01 TDS ＋ 27.5, Ip=0.36 Clay ＋ 1.44 Vermiculite ＋ 0.94 clay mineral-22.88, P$_{L}$=0.005 TDS - 0.31 Feldspar ＋ 22.43, e$_{o}$=0.02 Vermiculite - 0.01 Quartz ＋ TDS ＋ 0.93, E$_{50}$=1.94 Vermiculite-0.96 Kaolinite -0.53 silt ＋ 49.64, SR=-0.25 Kaolinite ＋ 1.5 pH - 2.3 Conductivity, CC = 0.03 pH ＋ TDS - 0.2, LL = 0.5 Clay ＋ 1.3 Vermiculite ＋ 5.5 Conductivity ＋ 0.8 Caly mineral-20.4.4.4.4