Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07b
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- Pages.1218-1221
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- 2004
A Study on the Resistivity-Temperature Characteristic of the Bi-Superconducting Thin Films Fabricated by using the Bon Beam Sputtering Method
이온 빔 스퍼링 법으로 제작한 Bismuth계 초전도 박막의 저항률-온도특성에 관한 연구
- Cheon, Min-Woo (Department of Electrical & Electronic Eng., Dongshin University) ;
- Park, No-Bong (Department of Electrical & Electronic Eng., Dongshin University) ;
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Yang, Sung-Ho
(Department of Electrical & Electronic Eng., Dongshin University) ;
- Park, Yong-Pil (Department of Electrical & Electronic Eng., Dongshin University)
- Published : 2004.07.05
Abstract
Bi2212 superconducting thin films fabricated by using the ion Beam Sputtering Method. As a result, although the composition of Bi2212 was set up, the phase of Bi2201, Bi2212 and Bi2223 was formed. The formation area of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation.
Keywords
- Sputtering method;
- Evaporation method;
- $Bi_2Sr_2Ca_nCu_{n+1}O_x(n{\geq}0)$;
- Superconducting thin film