• Electrical & Electronic Materials
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• v.7 no.6
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1098-1101
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• 1995

NbTi thin films were prepared on Si wafer and Cu substrate by rf magnetron sputtering in the range of sputtering pressure $3{\times}10^{-2}$torr to $3{\times}10^{-4}$torr at room temperature. The influence of sputtering pressure and substrate type on crystallographic orientation and morphology of NbTi thin films was investigated by using X-ray diffraction(XRD) and scanning electron microscopy(SEM), respectively. And the effect of crystallographic orientation and morphology of NbTi film on electromagnetic behaviors was estimated by measuring critical current in various applied magnetic field. The film morphology changed from porous structure consisting of tapered crystallites to densely deposited film decreasing with sputtering pressure. The change of crystallographic orientation with the sputtering pressure and rf power was calculated from the texture coefficient of(002) plane based on XRD patterns. It was found that a change of texture coefficient of(002) plane increased with decreasing sputtering pressure. From observation of critical current in various applied magnetic field, we have identified that the change of critical current abruptly decrease applying with magnetic field and NbTi film produced at high sputtering pressure does not exhibit superconductivity but at low sputtering pressure shows superconductivity.

• Journal of the Korean institute of surface engineering
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• v.33 no.5
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• pp.349-355
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• 2000

Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.379-382
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• 1998

(Ba, Sr)TiO$_3$[BST] thin films were fabricated on Pt/SiO$_2$/Si substrate by RF sputtering technique. The Mic개structure, dielectric and electrical properties of BST thin films were investigated with sputtering pressure. Dielectric constant and dielectric loss of the deposited thin film at sputtering pressure of 5 mTorr were about 91 and 1.9(%), respectively. Increasing sputtering pressure, leakage current was increased. It was found that leakage current of BST thin films was depended on the sputtering pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.427-431
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• 2000

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) and glass substrates have been deposited by a dc magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by sputtering power, oxygen partial pressure and films thickness. As the experimental results, the XRD patters of ITO films are influenced by sputtering power and pressure. As the power and pressure are increased, (411) peak is grown suddenly. the electrical resistivity is also increased, as the sputteing power and pressure are increased. Transmittance of ITO thin films in visible light ranges is lowered with increasing the sputtering power and film thickness. Reflectance of ITO films in infia-red region is decreased, as the power and pressure is increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.190-193
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• 2022

In this work, the effect of sputtering working pressure for the tellurium film and its thin-film transistor was investigated. The transfer characteristics of tellurium thin-film transistors were improved by increasing the working pressure during sputtering process. As increasing working pressure, physical and optical properties of Te films such as crystallinity, transmittance, and surface roughness were improved. Therefore, the improved transfer characteristics of Te thin-film transistors may originate from both improved interface properties between the silicon oxide gate dielectric layer and the tellurium active layer with an improved quality of Te film. In conclusion, the control of working pressure during sputtering would be important for obtaining high-performance tellurium-based thin film transistor

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.461-464
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• 1995

We have investigated the effects of sputtering Ar gas pressure on magnetic anisotropy of Co/Pt multilayers, where sputtering Ar gas pressure was varied from 2 to 20 mTorr. The surface and volume anisotropies were found to be strongly dependent on sputtering Ar gas pressure. In particular, the surface anisotropy exhibited more than fourfold enhancement as Ar pressure was decreased from 20 to 5 mTorr. We have found that the surface anisotropy was closely correlated with the low-angle x-ray diffraction intensity. We believe that these results are mainly ascribed to the variation of microstructure in the Co/Pt multilayer thin films with sputtering Ar gas pressure.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.19-22
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.26-29
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.141-145
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• 2011

ZnO:Al thin films were deposited by RF magnetron sputtering with various base pressure, and their structural, optical, and electrical properties were studied. The influence of the base pressure on the ZnO:Al thin film was confirmed and a high-quality thin film was obtained by controlling the base pressure. In all Al-doped ZnO thin films, the preferred orientation of (002) plane was observed and light transmittance in visible region (400 nm~800 nm) had above 85%. With decreasing of base pressure, crystallinity, resistivity, and figure of merit were improved. The improvement of resistivity with base pressure was attributed to the change of grain size.