• Journal of the Korean institute of surface engineering
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• v.45 no.5
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• Korean Journal of Materials Research
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• v.28 no.3
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• pp.159-165
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• 2018

In order to increase the efficiency of the sputtering method widely used in thin film fabrication, a dc sputtering apparatus which supplies both high frequency and magnetic field from the outside was fabricated, and cobalt thin film was fabricated using this apparatus. The apparatus can independently control the applied voltage, the target-substrate distance, and the target current, which are important parameters in the sputtering method, so that a stable glow discharge is obtained even at a low gas pressure of $10^{-3}$ Torr. The fabrication conditions using the sputtering method were mainly performed in $Ar+O_2$ mixed gas containing about 0.6 % oxygen gas under various Ar gas pressures of 1 to 30 mTorr. The microstructure of Co thin films deposited using this apparatus was examined by electron diffraction pattern and X-ray techniques. The magnetic properties were investigated by measuring the magnetization curves. The microstructure and magnetic properties of Co thin films depend on the discharge gas pressure. The thin film fabricated at high gas pressure showed a columnar structure containing a large amount of the third phase in the boundary region and the thin film formed at low gas pressure showed little or no columnar structure. The coercivity in the plane was slightly larger than that in the latter case.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.452-457
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• 2002

Titanium oxide films were prepared by RF reactive magnetron sputtering. The effect of sputtering conditions on structural and optical properties was investigated systemically as a function of sputtering pressure(5~20 mTorr) and $O_2/Ar$ flow ratio(0.08~0.4). The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. At low sputtering pressure and $O_2/Ar$ flow ratio, the films had preferred orientations along [101] and [200] directions. As the sputtering pressure and $O_2/Ar$ flow ratio increased, the intensity of the 101 and 200 diffraction peaks decreased gradually. The microstructure of the sputtered films showed the fine grain size (20nm~50nm) and columnar microcrystals perpendicular to the substrate. With increasing the sputtering pressure and decreasing $O_2/Ar$ flow ratio, the sputtered films showed the more porous columnar structure. XPS analysis showed that stoichiometric $TiO_2$ films were deposited at 7 mTorr sputtering pressure and 0.2 $O_2/Ar$ flow ratio. The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. Ellipsometeric analysis showed that the refractive index increased from 2.32 to 2.46 as the sputtering pressure decreased. The packing density calculated using the refractive index varied from 0.923 to 0.976, indicating that $TiO_2$films became denser as the sputtering pressure decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1384-1387
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• 2007

We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the $O_2$ partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the $O_2$ partial pressure as 0, $5.2{\times}10^{-5}$, $1.0{\times}10^{-4}$, and $4.1{\times}10^{-4}$ Torr. It has been known that the secondary electron emission coefficient and the number of defect energy levels increased as the $O_2$ partial pressure increases. So we have investigated the property of sputtering yield according to the $O_2$ partial pressure. We have known that the sputtering yield deceases as the $O_2$ partial pressure increases by using the FIB system.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.43-49
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• 2014

Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.190-196
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• 2014

Flexible $TiO_2$ films were deposited as dielectric materials for high-energy-density capacitors on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering method. Both the growth behavior and electrical properties of the flexible $TiO_2$ films were dependent on the sputtering pressure and $O_2$/Ar gas ratio during the sputtering process. All $TiO_2$ films had an amorphous structure regardless of the sputtering conditions due to the low substrate temperature. Microstructural characteristics such as the surface morphology and roughness of the films degraded with an increase in the sputtering pressure and $O_2$ gas concentration. The $TiO_2$ films deposited at a low pressure showed better electrical properties than those of films deposited at a high pressure. The $TiO_2$ films prepared at 10 mTorr exhibited a dielectric constant of approximately 90 at 1 kHz and a leakage current density of $5{\sim}6{\times}10^{-7}A/cm^2$ at 3 MV/cm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.786-788
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• 2013

Molybdenum (Mo) thin film has high electrical conductivity and has been used for a back contact of CIGS thin film solar cell. Generally, the electrical conductivity and the adhesion between the substrate and the film is greatly affected by sputtering conditions such as sputtering power, working pressure, and substrate temperature. In this study, Mo films were deposited by DC magnetron sputtering technique. The influence of sputtering pressure on the electrical and structural properties of Mo films was investigated by using SEM(scanning electron microscope), XRD(X-ray Diffraction), 4-point probe, Reflectance, Hall measurement.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.824-828
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• 1996

Co-based alloy thin films ddeposited by fcing targets sputtering(FTS) were investigated for use in high-density magnetic recording media to determine how their magnetic properties are dependent on the sputtering conditions, and thus to find appropriate parameters that allow the sputtering and thin films to meet the specificiations for magnetic properties. FTS can discharge at lower working gas pressure than other sputtering methods such as dcmagnetron sputteing because the plasma is sufficiently confined by a magnetic field applied perpendicular to both of the target planes, which results in plasma-free substrates. Co-Cr-Ta films were deposited by FTS on glass and silicon substrates at substrate temperature between room temperature and $350^{\circ}C$, and at argon gas pressure between 0.1 and 10mTorr. The films were also deposited on polyimide tapes at substrate temperature of $130^{\circ}C$ and argon gas pressure of 1 mTorr. The effective advantages of Ta as an additional element were investigated, using the same films on the tapes. As a result of the experiment, it was found that better magnetic properties were obtained in the ranges of higher temperature and lower argon gas pressure with background pressure in thr range of $1.5 \times 10^{-6}$ Torr. Ta addition at 2 to 4 atomic percent almost havled the Co-Cr grain sizes, indicating that Ta addition at an appropriate atomic percent is effective for improving the microstructure and characteristics of Co-Cr films.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1712-1715
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• 2018

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

• Journal of the Korean Magnetics Society
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• v.6 no.4
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• pp.235-241
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• 1996

Co/Pd and Co/Pt multilayered thin films for perpendicular magnetic recording media were fabricated by sput¬tering method and the effects of the sputtering pressure during the formation of Pd or Pt underlayers on the magnetization behavior and coercivity of the multilayers were investigated. It was found that the coercivity of Co/Pd multilayers was strongly dependent on the sputtering pressure of underlayer and could be enhanced to a large extent merely by increasing the sputtering pressure of underlayer, while in case of Co/Pt films, the degree of coercivity enhancement by controlling the sputtering pressure of underlayer was almost negligible. Coercivity variation of Co/Pd and Co/Pt multilayers with the underlayer material and deposition pressure of underlayer could be well explained in terms of the interface roughness of multilayer films induced by underlayer topology, which could also be correlated to the change of perpendicular anisotropy energy and magnetic reversal feature with the sputtering pressure of underlayer. Kerr rotation angle was hardly affected by the preparation conditions of underlayers.