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The Properties of RF Sputtered Zinc Tin Oxide Thin Film Transistors at Different Sputtering Pressure  

Lee, Hong Woo (Development Center (LCD), Samsung Display)
Yang, Bong Seob (Department of Materials Science and Engineering, Seoul National University)
Oh, Seungha (Department of Materials Science and Engineering, Seoul National University)
Kim, Yoon Jang (Department of Materials Science and Engineering, Seoul National University)
Kim, Hyeong Joon (Department of Materials Science and Engineering, Seoul National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.13, no.1, 2014 , pp. 43-49 More about this Journal
Abstract
Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.
Keywords
Zinc Tin Oxide (ZTO); Thin Film Transistor (TFT); Sputtering pressure; Multi-layer channel; Pumping; Negative Bias Illumination Stability (NBIS);
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