• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2245-2247
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• 2000

The purpose of this paper is to demonstrate for the design and the fabrication of suspended spiral inductors using the micromachining technology. Also. the characteristics of spiral inductors with substrate lossless are simulated by lumped-element model. The absence of the lossy silicon substrate after micormachining results in significantly improved quality factor characteristics of 14. Micromachined spiral inductors have the improvement of a quality factor of about 60% than spiral inductors on silicon which is not micromachined.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.645-648
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• 1998

We used a three-dimensional inductance extraction program, Fasthenry for optimal design of the spiral inductors on silicon substrate. The inductance and quality factor of the spiral inductors with various design parameters were calculated so that the optimal parameter value was determined. The spiral inductors then were fabricated using different foundary processes and were measured using the network analyzer and microwave probes. The pad and other parasitics of measurement system were de-embedded using the y-parameter calibration technique. the inductors fabricated using the LG 0.8um process and HP 0.5um process showed the quality factor of 5.8 and 3, respectively. Finally the equivalent circuit farameters of the spiral inductors on silicon substrate were extracted from the measurement data using the matlab.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.890-893
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• 2004

In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.216-218
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• 2005

Planar spiral inductors on silicon substrates were optimally designed using MATLAB, which is a tool to perform numerical computations with matrices. The equivalent circuit parameters of the spiral inductors were extracted from the data measured from the spiral inductors fabricated using a 0.18 $\mu\textrm{m}$ RF CMOS process. The metal width, which is a critical design parameter, was optimized for the maximum quality factor with respect to the operating frequency.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.987-990
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• 2003

This paper presents a cross-coupled RF VCO with high-Q MEMS-based spiral inductors. Since the use of high-Q inductors is critical to VCO design, MEMS-based spiral inductors with the Q-factor of nearly 22 are used for the RF VCO with an active cascode current source. The RF VCO circuits including spiral inductors have been designed and simulated in GaAs MMIC-MEMS process. The simulation results of the VCO circuits showed the phase noise of -180dBc/Hz at an offset frequency of 500KHz. The RF VCO circuit simulatinon used 2mA DC current and 3.3V supply.

• 전기학회논문지
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• 제56권11호
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• pp.1967-1971
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• 2007

In this paper, we verified basic forms and equivalent circuits of spiral inductors and various kinds of parasitics of equivalent circuits by using HFSS and Nexxim program that were 3-D EM analysis tools, and fabrication on-chip spiral inductors using Hynix's 0.25um 1-poly and 5-metal CMOS process. Comparing with PGS(patterned ground shield) and NPGS(non patterned ground shield) of spiral inductors of 3.5 turn, 4.5 turn and 5.5 turn, etc, the application of PGS could improve maximum Q value by 8-12%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1301-1302
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• 2006

In this paper, embedded spiral inductors are investigated into the PCB substrate for low cost RF SOP applications. The spiral inductors designed with geometrical variations were simulated, fabricated, measured, and characterized by using 3D EM simulator, 8 layered PCB standard process and HP 8510B network analyzer (or verifying their applicability. The fabricated embedded spiral inductor has inductance of 9.4 nH at 800MHz, maximum quality factor of 64.8 at 1.09GHz and self resonant frequency of 3.93GHz, respectively. As the measured inductances and quality factors are well matched with simulated ones. PCB embedded spiral inductors are promising for advanced electronic systems with various functionality, low cost, small size and volume.

• Journal of information and communication convergence engineering
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• 제4권4호
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• pp.155-157
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• 2006

This paper presents the thermal technique to improve characteristic of planar spiral inductors. The spiral inductors were fabricated on silicon dioxide/silicon (SiO2/Si) wafer. The thermal treatment was done by annealing processes. The measure results showed a considerable improvement of return loss (Sl1). This thermal treatment seems very promising for enhancing spiral inductors based RF IC's.

• 한국산학기술학회논문지
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• 제12권9호
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• pp.4101-4106
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• 2011

본 논문에서 기존 underpass와 via를 갖는 단층 나선형 박막 인덕터를 확장하여 제한된 점유면적 내에서 인덕턴스를 증가시킬 수 있는 하층 나선형 코일과 via를 갖는 2층 나선형 박막 인덕터의 구조를 제안하고 주파수 특성을 확인하였다. 인덕터의 구조는 Si를 $300{\mu}m$, $SiO_2$를 $7{\mu}m$으로 하였으며, Cu 코일의 폭과 선간의 간격은 각각 $20{\mu}m$으로 설정하여 3회 권선하였다. 나선형 박막 인덕터의 성능을 나타내는 인덕턴스, quality-factor, SRF에 대한 주파수 특성을 HFSS로 시뮬레이션 하였다. 2층 나선형 박막 인덕터는 0.8~1.8GHz 범위에서 3.2nH의 인덕턴스, 2.5GHz에서 최대 8.2 정도의 품질계수를 가지며, SRF는 5.8GHz로 시뮬레이션 결과를 얻었다. 반면에 단층 나선형 박막 인덕터는 0.8~1.8GHz 범위에서 1.5nH의 인덕턴스, 8GHz에서 최대 18 정도의 품질계수를 가지며, SRF는 19.2GHz로 시뮬레이션 결과를 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.89-93
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• 2002

In the present paper we suggested a parallel-branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on P-type silicon wafer (5∼15 Ω-cm) under the standard CMOS process and it showed a improved quality(Q) factor by more than 10% with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with those of the conventional spiral inductors.