• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.439-444
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• 2016

The method for extracting the SPICE model parameter of Schottky diode under DC forward bias is proposed. A method for improving the accuracy of the SPICE model parameter at various temperatures is proposed. Three analysis steps according to the magnitude of the current is used in order to extract the parameters effectively. At each analysis step, initial parameters are calculated by using the current-voltage equations and the Levenberg-Marquardt analysis is proceeded. To verify the validity of the proposed method, the SPICE model parameters for the BAT45 and FSV1045 under DC forward bias is extracted. Schottky diode currents obtained from the proposed method shows the average relative error of 6.1% and 9% compared with the measured data for the BAT45 and FSV1045 sample at various temperatures.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1203-1204
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• 2007

In the methods for securing software quality and safety, two approaches - product centered approach and process centered approach - can be suggested. SPICE is a standard for the process improvement and the capability determination, which is planned for securing software quality and safety by the process centered approach. In this paper, general SPICE model, which is presented in ISO/IEC 15504 and Automotive SPICE model for automobile industry are analyzed. For securing railway software quality and safety, appropriate scheme to apply Automotive SPICE to railway software is proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.347-352
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• 1998

In this paper, the extraction and optimization of SPICE parameters on SONOSFET for NVSM circuit design were discussed. SONOSFET devices with different channel widths and lengths were fabricated using conventional 1.2 um n-well CMOS process. And, electric properties for dc parameters and capacitance parameters were measured on wafer. SPICE parameters for the SONOSFET were extracted from the UC Berkeley level 3 model for the MOSFET. And, local optimization of Ids-Vgs curves has carried out in the bias region of subthreshold, linear, saturation respectively. Finally, the extracted SPICE parameters were optimized globally by comparing drain current (Ids), output conductance(gds), transconductance(gm) curves with theoretical curves in whole region of bias conditions. It is shown that the conventional model for the MOSFET can be applied to the SONOSFET modeling except sidewalk effect.

• Journal of Power Electronics
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• v.19 no.6
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• pp.1591-1600
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• 2019

In this paper, a practical SPICE model for an IGBT and a PiN diode is proposed based on the Finite Differential Method (FDM). Other than the conventional Fourier model and the Hefner model, the excess carrier distribution can be accurately solved by a fast FDM in the SPICE simulation tool. In order to improve the accuracy of the SPICE model, the Taguchi method is adopted to calibrate the extracted parameters. This paper presents a numerical modelling approach of an IGBT and a PIN diode, which are also verified by SPICE simulations and experiments.

• Proceedings of the Korea Information Processing Society Conference
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• 2012.11a
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• pp.227-229
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• 2012

모바일 클라우드 서비스에 대한 요구에 따라 다양한 관련 기술들이 소개되고 있다. 이 중에서 모바일 원격접속 프로토콜은 RFB와 RDP, 두 개의 표준 프로토콜로 나뉜다. RFB 프로토콜은 구조의 단순함이, RDP 프로토콜은 빠른 응답속도가 상대적인 장점이다. 이 중, RDP 프로토콜은 윈도우즈 환경에 종속적인 제약이 있는데, SPICE 프로토콜은 이러한 RDP 프로토콜과는 달리 가상화 환경에 최적화된 오픈소스 프로토콜이다. 이러한 SPICE 프로토콜의 특징은 모바일 클라우드 환경에 상당한 이점을 가질 수 있다. 본 논문은 PC환경에서 RFB와 RDP, SPICE 프로토콜을 비교해 보고 모바일 환경에서의 활용성을 가늠해 본다. 그리고 모바일 환경에 가장 적합한 SPICE 프로토콜이 안드로이드에서 동작가능한지를 살펴보고 발생 가능한 문제점과 해결방안을 살펴보고자 한다.

• Proceedings of the Korea Information Processing Society Conference
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• 2012.11a
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• pp.223-226
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• 2012

스마트폰과 같은 모바일 단말은 모바일 클라우드의 서비스를 받기 위해 모바일 가상머신에 원격접속 할 수 있는 기술이 필요하다. 원격접속 표준 프로토콜은 프레임 버퍼 방식의 Remote Frame Buffer(RFB) 프로토콜과 메시지 전송방식의 Remote Desktop Protocol(RDP)로 나뉜다. SPICE 프로토콜은 RDP 프로토콜 기반의 오픈소스 원격접속 프로토콜이다. SPICE 프로토콜은 가상머신에 원격접속 할 수 있지만 모바일 환경을 지원하지 않는다. 따라서 SPICE 프로토콜을 모바일 환경에서 사용하려면 포팅 작업이 필요하다. 본 논문은 리눅스용 SPICE 클라이언트 모듈을 안드로이드 환경에 맞도록 포팅하는 방법을 소개하고자 한다. 또한 포팅시 발생하는 문제점과 이를 해결하는 방법 몇 가지를 함께 소개한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.7
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• pp.560-565
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• 2018

The SPICE (Sparse Iterative Covariance-based Estimation) algorithm estimates the azimuth angle by applying a sparse recovery method to the covariance matrix in the time domain. In this paper, we show how the SPICE algorithm, which was originally formulated in the time domain, can be extended to the frequency domain. Furthermore, we demonstrate, through numerical results, that the performance of the proposed algorithm is superior to that of the conventional frequency domain algorithm.

• Journal of information and communication convergence engineering
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• v.14 no.2
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• pp.115-121
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• 2016

Currently there is a lack of literature on SPICE-level models of double-gate (DG) tunnel field-effect transistors (TFETs). A DG TFET compact model is presented in this work that is used to develop a SPICE model for DG TFETs implemented with Verilog-A language. The compact modeling approach presented in this work integrates several issues in previously published compact models including ambiguity about the use of tunneling parameters A_k and B_k, and the use of a universal equation for calculating the surface potential of DG TFETs in all regimes of operation to deliver a general SPICE modeling procedure for DG TFETs. The SPICE model of DG TFET captures the drain current-gate voltage (I_ds-V_gs) characteristics of DG TFET reasonably well and offers a definite computational advantage over TCAD. The general SPICE modeling procedure presented here could be used to develop SPICE models for any combination of structural parameters of DG TFETs.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.59-63
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• 2005

A simulation method combined with the simulation program with integrated circuit emphasis (SPICE) and the technology computer-aided design (TCAD) has been proposed to estimate the electrical characteristics of the metal-ferroelectric-semiconductor field effect transistor (MFS/MFISFET). The complex behavior of the ferroelectric property was analyzed and surface potential of the channel region in the MFS gate structure was calculated with the numerical TCAD method. Since the calculated surface potential is equivalent with the surface potential obtained with the SPICE model of the conventional MOSFET, we can obtain the current-voltage characteristics of MFS/MFISFET corresponding to the applied gate bias. Therefore, the proposed method will be very useful for the design of the integrated circuits with MFS/MFISFET memory cell devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.7-12
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• 2010

We have developed a SPICE compatible model of thermoelectric devices, and a parameter extracting technique only by electrical and temperature measurement by using Harman method was proposed. The proposed model and parameter extraction technique do not require experimental data from thermal conductivity measurements. The maximum error between extracted parameters extracted by proposed method and conventional method was about 14%, which is not a severe mismatch for real application. The proposed model is applicable to design of both for thermoelectric coolers and thermo electric generators.