• Title/Summary/Keyword: Spectre

Search Result 75, Processing Time 0.03 seconds

Intel SGX Vulnerability Research Trends (Intel SGX 취약점 연구 동향)

  • Kim, Kyung-Ho;Kwon, Hyeok-Dong;Kim, Hyun-Jun;Seo, Hwa-Jeong
    • Proceedings of the Korea Information Processing Society Conference
    • /
    • 2019.10a
    • /
    • pp.461-464
    • /
    • 2019
  • 2017년에 대표적인 프로세서 취약점인 Meltdown과 Spectre가 발표됨에 따라 Intel의 CPU에서 다양한 취약점이 노출되었다. 이 취약점은 하드웨어 기반으로 신뢰 할 수 있는 환경을 보장해주는 TEE(Trusted Execution Environment) 기술을 사용하는 Intel의 SGX(Software Guard Extensions)에서도 유효하다. 따라서 이러한 취약점을 이용하여 신뢰 할 수 있는 환경에서 데이터의 무결성 및 기밀성을 훼손하는 다양한 공격 연구가 활발히 이루어지고 있다. 본 논문에서는 Intel SGX의 다양한 공격 연구에 대한 최신 동향을 살펴보며, 이에 따른 향후 연구 전망을 제시하고자 한다.

Exploring Branch Target Buffer Architecture on Intel Processors with Performance Monitor Counter (Performance Monitor Counter를 이용한 Intel Processor의 Branch Target Buffer 구조 탐구)

  • Jeong, Juhye;Kim, Han-Yee;Suh, Taeweon
    • Proceedings of the Korea Information Processing Society Conference
    • /
    • 2019.10a
    • /
    • pp.24-27
    • /
    • 2019
  • Meltdown, Spectre 등 하드웨어의 취약점을 이용하는 side-channel 공격이 주목을 받으면서 주요 microarchitecture 구조에 대한 철저한 이해의 필요성이 커지고 있다. 현대 마이크로프로세서에서 branch prediction이 갖는 중요성에도 불구하고 세부적인 사항은 거의 알려지지 않았으며 잠재적 공격에 대비하기 위해서는 반드시 현재 드러난 정보 이상의 detail을 탐구하기 위한 시도가 필요하다. 본 연구에서는 Performance Monitor Counter를 이용해 branch 명령어를 포함한 프로그램이 실행되는 동안 Branch Prediction Unit에 의한 misprediction 이벤트가 발생하는 횟수를 체크하여 인텔 하스웰, 스카이레이크에서 사용되는 branch target buffer의 구조를 파악하기 위한 실험을 수행하였다. 연구를 통해 해당 프로세서의 BTB의 size, number of way를 추정할 수 있었다.

SWIR/VIS Reflectance Ratio Over Korea for Aerosol Retrieval

  • Lee, Kwon-Ho;Li, Zhangqing;Kim, Young-Joon
    • Korean Journal of Remote Sensing
    • /
    • v.23 no.1
    • /
    • pp.1-5
    • /
    • 2007
  • Relatively simplified method for determination of surface reflectance has been used by using the ratio between SWIR and VIS band reflectance over land surface. The surface reflectance ratios (SWIR/VIS) were estimated over land in Korea from Terra Moderate Resolution Imaging Spectre-radiometer (MODIS) L1 data. The ratios by using the minimum reflectance technique were lower than those by MODIS operational aerosol retrieval algorithm. Although the comparison between MODIS and sunphotometer Aerosol Optical Thickness (AOT) has a good correlation coefficient (R=0.84), slightly overestimated MODIS AOTs were shown with a slope of linear regression line of 0.89. The comparison between the ratio and AOT dearly exhibit that the error of MODIS AOT could be originated from the underestimated surface reflectances by MODIS operational algorithm.

Radiometric Characteristics of KOMPSAT EOC Data Assessed by Simulating the Sensor Received Radiance

  • Kim, Jeong-Hyun;Lee, Kyu-Sung;Kim, Du-Ra
    • Korean Journal of Remote Sensing
    • /
    • v.18 no.5
    • /
    • pp.281-289
    • /
    • 2002
  • Although EOC data have been frequently used in several applications since the launch of the KOMPSAT-1 satellite in 1999, its radiometric characteristics are not clear due to the inherent limitations of the on-board calibration system. The radiometric characteristics of remotely sensed imagery can be measured by the sensitivity of radiant flux coming from various surface features on the earth. The objective of this study is to analyze the radiometric characteristics of EOC data by simulating the sensor- received radiance. Initially, spectral reflectance values of reference targets were measured on the ground by using a portable spectre-radiometer at the EOC spectrum. A radiative transfer model, LOWTRAN, then simulated the sensor-received radiance values of the same reference target. By correlating the digital number (DN) extracted from the EOC image to the corresponding radiance values simulated from LOWTRAN, we could find the radiometric calibration coefficients for EOC image. The radiometric gain coefficients of EOC are very similar to those of other panchromatic optical sensors.

Design of the Noise Margin Improved High Voltage Gate Driver IC for 300W Resonant Half-Bridge Converter (잡음 내성이 향상된 300W 공진형 하프-브리지 컨버터용 고전압 구동 IC 설계)

  • Song, Ki-Nam;Park, Hyun-Il;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.45 no.10
    • /
    • pp.7-14
    • /
    • 2008
  • In this paper, we designed the HVIC(High Voltage Gate Driver IC) which has improved noise immunity characteristics and high driving capability. Operating frequency and input voltage range of the designed HVIC is up to 500kHz and 650V, respectively. Noise protection and schmitt trigger circuit is included in the high-side level shifter of designed IC which has very high dv/dt noise immunity characteristic(up to 50V/ns). And also, rower dissipation of high-side level shifter with designed short-pulse generation circuit decreased more that 40% compare with conventional circuit. In addition, designed HVIC includes protection and UVLO circuit to prevent cross-conduction of power switch and sense power supply voltage of driving section, respectively. Protection and UVLO circuit can improve the stability of the designed HVIC. Spectre and Pspice circuit simulator were used to verify the operating characteristics of the designed HVIC.

Design of 1.0V O2 and H2O2 based Potentiostat (전원전압 1.0V 산소 및 과산화수소 기반의 정전압분극장치 설계)

  • Kim, Jea-Duck;XIAOLEI, ZHONG;Choi, Seong-Yeol;Kim, Yeong-Seuk
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.21 no.2
    • /
    • pp.345-352
    • /
    • 2017
  • In this paper, a unified potentiostat which can measure the current of both $O_2$-based and $H_2O_2$-based blood glucose sensors with low supply voltage of 1.0V has been designed and verified by simulations and measurements. Potentiostat is composed of low-voltage operational transconductance amplifier, cascode current mirrors and mode-selection circuits. It can measure currents of blood glucose chemical reactions occurred by $O_2$ or $H_2O_2$. The body of PMOS input differentional stage of the operational transconductance amplifier is forward-biased to reduce the threshold voltage for low supply voltage operation. Also, cascode current mirror is used to reduce current measurement error generated by channel length modulation effects. The proposed low-voltage potentiostat is designed and simulated using Cadence SPECTRE and fabricated in Magnachip 0.18um CMOS technology with chip size of $110{\mu}m{\times}60{\mu}m$. The measurement results show that consumption current is maximum $46{\mu}A$ at supply voltage of 1.0V. Using the persian potassium($K_3Fe(CN)_6$) equivalent to glucose, the operation of the fabricated potentiostat was confirmed.

Design of the High Brightness LED Driver IC with Enhanced the Output Current Control Function (출력전류 제어 기능이 향상된 고휘도 LED 구동 IC 설계)

  • Song, Ki-Nam;Han, Seok-Bung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.23 no.8
    • /
    • pp.593-600
    • /
    • 2010
  • In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

High Voltage Driver IC for LCD/PDP TV Power Supply (LCD/PDP TV 전원장치용 고전압 구동 IC)

  • Song, Ki-Nam;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.11-12
    • /
    • 2009
  • In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

  • PDF

Modeling of Gate/Body-Tied PMOSFET Photodetector with Built-in Transfer Gate (내장된 전송게이트를 가지는 Gate/Body-Tied PMOSFET 광 검출기의 모델링)

  • Lee, Minho;Jo, Sung-Hyun;Bae, Myunghan;Choi, Byoung-Soo;Choi, Pyung;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
    • /
    • v.23 no.4
    • /
    • pp.284-289
    • /
    • 2014
  • In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by $10^3$ due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence's Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 im 2-poly 4-metal standard CMOS technology.

A Study on the Mass Collection Efficiency in Collector Step of Electrostatic Precipitator by Physical Gas Characterization (전기집진장치에서 가스의 물리적인 특성에 따른 포집구역내의 입자포집율 연구)

  • Ha, Sang-An;Im, Gyeong-Taek;Sin, Nam-Cheol
    • Journal of Environmental Science International
    • /
    • v.7 no.1
    • /
    • pp.36-40
    • /
    • 1998
  • This study was carried out to investigate the collection Efficiency of mass in collector step at the different of physical gas characterization. This work has focused on the dependence of the collection efficiency of mass in the collector zone of a two-stage set up field with gas temperature T and the dew point tmeperature. To identify the dependence of the mass collection efficiency on the Bounded plate of the collector zone MP.k by the spectre electric resistance of dust $p_e$. and the relative humidify ${\varphi}$, 20 at- tempts have been made with three different gas temperature ($50{\circ}C, 80{\circ}C, 110{\circ}C$) at different dew point. At the specific electric resistance of dust $p_e$=$10^6{\Omega}m$ which relative humidity corresponds to $\phi$ > 15%, a easy rise of the sounded plate secluded dust mass share was measured atwain. As the result of the higher cohesion imprisonment power due to the adsorbtion of particle, the rinse of the relative humidity developed on the particle surface. Therefore, the collection efficiency of mass was not predominant the high temperature T in the collector zone, neither was the pecific ellectric resistance of dust dependent.

  • PDF