• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.17-18
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• 2006

고상 확산 방법을 이용하여 얕은 소스/드레인 접합을 가지는 SOI (Silicon-On-Insulator) MOSFET 소자를 제작하였다. 확산원으로는 PSG(Phosphorus silicate glass) 박막과 PBF(Poly Boron Film) 박막이 각각 n, p-type 소자 형성을 위해 사용되었다. 얕은 접합 형성을 위하여 급속 열처리 방법(RTA: Rapid Thermal Annealing)을 이용하여 PSG와 PBF로부터 인과 붕소를 SOI MOSFET 소자의 소스/드레인으로 확산시켰다. 또한, 소자 특성 개선을 위한 후 속 열처리 공정으로 희석된 수소 분위기 중에서 FA(Furnace Annealing)를 실시하였다. SPD 기술을 적용하여 10 nm 이하의 매우 얕은 p-n 접합을 형성할 수 있었고, 양호한 다이오드 특성을 얻을 수 있었다. 또한, SPD 방법으로 결함이 없는 접합 형성이 가능하며, 소자 제작 공정의 최적화를 통해 차세대 CMOS 소자로 기대되는 SOI MOSFET를 성공적으로 제작할 수 있었다.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1862-1864
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• 2000

Recently diagnostic techniques have been investigated to detect a partial discharge(PD) associated with a dielectric material defect in a high-voltage electrical apparatus. Among the PD measuring method, detecting electromagnetic wave generated by PD is one of the most effective method because PD radiates wide frequency of electromagnetic wave up to UHF. From the above points of view, we have investigated the polarization and distance characteristics of electromagnetic wave radiated by an insertion of solid insulators between needle-plane electrodes in the air. According to the magnitude of applied voltage, the frequency spectrum of radiated electromagnetic waves were increased about under 100(MHz), compared with background noise. The electromagnetic wave magnitude is attenuated about 4$\sim$7.6[dB] at the point 3[m] away from PD.

• Current Applied Physics
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• v.18 no.12
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• pp.1546-1552
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• 2018

The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.65-67
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• 1996

The spacer is solid insulator which supports main conductor in GIS and seperates gas area. The 800kV spacer was designed and manufactured considering the results of electrical and structural analysis using commercial package MSC/NASTRAN. Temperature test and water pressure test were carries out, and the results from water pressure test were compared with the calculated ones from MSC/NSATRAN.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1264-1265
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• 2011

본 논문은 가스 절연 차단기를 대체하는 고체 절연체의 성형 시 발생하는 집중 열응력에 의한 고체 절연체의 기계적 특성에 관한 연구 결과이다. 친환경 문제가 대두되고 전기 산업에서 고객은 좀 더 안정적이고 안전한 전기 공급이 필요시 됨에 따라서 고체 절연 개폐기 및 차단기의 수요가 늘어남에 따라 고체 절연체의 생산 불량률이 이슈화가 되고 있다. 특히 성형 시 발생되는 열응력 및 거동으로 인하여 절연체의 균열 및 내부 진공 인터럽터의 파손 등으로 경제적 비용 손실의 문제가 발생하게 되어 집중 응력을 피할 수 있는 합리화 구조에 대한 연구가 진행되었다.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2320-2322
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• 1999

This paper was studied on the surface discharge characteristics and tracking phenomena on the solid insulator in liquid nitrogen ($LN_2$) at atmospheric pressure. In order to investigate the bubbles which have much influence on electric surface discharge in liquid nitrogen, Knife type electrode and plane electrode were arranged in different modes(Mode A, Mode B, and Mode C) and investigated for surface discharge and tracking phenomena. In Mode A, by the movement of bubbles tracking damage was formed under the electrodes. The tracking pattern in Mode B was formed along the electrode axis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.202-205
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• 1997

In this paper, we synthesized poly(N-(2-4-imidazolyl) ethyl) maleimide-alt-1-octadecene(IMI-O) polymer that can have function group and improvement of mechnical strength and then confirmed the possibility of molecular device made by LB method. Evaluation of LB film have been processed such as the technique of EA, $^{1}$H-NMR, FT-IR. Also, the deposition status was observed by SEM and Metal/Insulator/Metal(MIM) device was fabricated for investigation of electric properties. In our experimental results. The surface pressure for the solid state was investigated to 20~35[dyne/cm] by the $\pi$ -A isotherm and the limiting area was about 40 ~45 ($\AA$$^2$/molecule). The deposition status of LB films was confirmed by SEM. The conductivity of LB film was found to be 10$^{-14}$ ~10$^{-13}$ [S/cm] by I-V characteristic.

• 전기의세계
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• v.22 no.2
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• pp.19-22
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• 1973

The contents of this paper are the effects of heat treatment on the breakdown strength of Amber Mica. In this study the breakdown strength of Amber Mica of which thickness is about 0.2-0.5(mm) was found to be raised by approximately 10% when it is heat treated at proper temperature and during suitable interval of time. Furthermore, both the heat-treatment temperature and time interval are higher and longer respectively within some extent, the more breakdown strength increasing effects are able to be expected. The results of this experiments are explained qualitively by the existence of contained gas, Hippel's breakdown theory in crystal solid insulator, and disorder of crystal structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.1006-1012
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• 2004

In this paper, neural networks is studied to apply as a PD source classification in XLPE power cable specimen. Two learning schemes are used to classification; BP(Back propagation algorithm), SOM(self organized map - kohonen network). As a PD source, using treeing discharge sources in the specimen, three defected models are made. And these data making use of a computer-aided discharge analyser, statistical and other discharge parameters is calculated to discrimination between different models of discharge sources. And a]so these distribution characteristics are applied to classify PD sources by two scheme of the neural networks. In conclusion, recognition efficiency of BP is superior to SOM.