• Title/Summary/Keyword: Solar Cells

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Process and Performance Analysis of a-Si:H/c-Si Hetero-junction Solar Sells Prepared by Low Temperature Processes (저온 공정에 의한 a-Si:H/c-Si 이종접합 태양전지 제조 및 동작특성 분석)

  • Lim, Chung-Hyun;Lee, Jeong-Chul;Jeon, Sang-Won;Kim, Sang-Kyun;Kim, Seok-Ki;Kim, Dong-Seop;Yang-Sumi;Kang-Hee-Bok;Lee, Bo-young;Song-Jinsoo;Yoon-Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.196-200
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    • 2005
  • In this work, we investigated simple Aㅣ/TCO/a-Si:H(n)/c-Si(p)/Al hetero-junction solar cells prepared by low temperature processes, unlike conventional thermal diffused c-Si solar cells. a-Si:H/c-Si hetero-junction solar cells are processed by low temperature deposition of n-type hydrogenated amorphous silicon (a-Si:H) films by plasma-enhanced chemical vapor deposition on textured and flat p-type silicon substrate. A detailed investigation was carried out to acquire optimization and compatibility of amorphous layer, TCO (ZnO:Al) layer depositions by changing the plasma process parameters. As front TCO and back contact, ZnO:Al and AI were deposited by rf magnetron sputtering and e-beam evaporation, respectively. The photovoltaic conversion efficiency under AMI.5 and the quantum efficiency on $1cm^2$ sample have been reported. An efficiency of $12.5\%$ is achieved on hetero-structure solar cells based on p-type crystalline silicon.

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Low-Temperature Solution Process of Al-Doped ZnO Nanoflakes for Flexible Perovskite Solar Cells

  • Nam, SeongSik;Vu, Trung Kien;Le, Duc Thang;Oh, Ilwhan
    • Journal of Electrochemical Science and Technology
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    • v.9 no.2
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    • pp.118-125
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    • 2018
  • Herein we report on the selective synthesis and direct growth of nanostructures using an aqueous chemical growth route. Specifically, Al-doped ZnO (AZO) nanoflakes (NFs) are vertically grown on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) sheets at low temperature and ambient environment. The morphological, optical, and electrical properties of the NFs are investigated as a function of the Al content. Furthermore, these AZO-NFs are integrated into perovskite solar devices as the electron transport layer (ETL) and the fabricated devices are tested for photovoltaic performance. It was determined that the doping of AZO-NFs significantly increases the performance metrics of the solar cells, mainly by increasing the short-circuit current of the devices. The observed enhancement is primarily attributed to the improved conductivity of the doped AZO-NF, which facilitates charge separation and reduces recombination. Further, our flexible solar cells fabricated through this low temperature process demonstrate an acceptable reproducibility and stability when exposed to a mechanical bending test.

Organic Sensitizers based on Bis-carbazole for Dye-Sensitized Solar Cells (비스-카바졸 유기염료를 이용한 염료감응태양전지)

  • Kim, Hyo-Jeong;Byun, Yeo-Jin;Nam, Jung-Eun;Kim, Dae-Hwan;Kang, Jin-Kyu
    • 한국태양에너지학회:학술대회논문집
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    • 2012.03a
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    • pp.397-399
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    • 2012
  • Dye-sensitized solar cells (DSSCs) have received considerable attention as the most promising candidates for renewable energy systems in recent years. Among these, organic dyes which have many advantages such as large absorption coefficients, customized molecular design for desired photophysical and photochemical properties, inexpensiveness and environment-friendliness, are suitable as photosensitizers for DSSCs. We have studied on the design and synthesis of two organic dyes (BECZ 1 and BECZ 2) with a 9-ethyl-9H-carbazole core for dye-sensitized solar cells (DSSCs). Two organic dyes comprised of two 9-ethyl-9H-carbazole moiety as electron-donor, two types of cyanoacrylic acid moiety acting as acceptor. In addition, n-ethyl unit introduced for increasing the solubility and the donating power. The obtained organic dyes were comprehensively characterized by NMR, GC-MS, FAB-MS and UV/Vis spectroscopies. DSSCs sensitized by the dyes BECZ1 and BECZ2 produced ${\eta}$ value 3.31% and a ${\eta}$ value 3.21%.

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High-Efficiency Heterojunction with Intrinsic Thin-Layer Solar Cells: A Review

  • Dao, Vinh Ai;Kim, Sangho;Lee, Youngseok;Kim, Sunbo;Park, Jinjoo;Ahn, Shihyun;Yi, Junsin
    • Current Photovoltaic Research
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    • v.1 no.2
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    • pp.73-81
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    • 2013
  • Heterojunction with Intrinsic Thin-layer (HIT) solar cells are currently an important subject in industrial trends for thinner solar cell wafers due to the low-temperature of production processes, which is around $200^{\circ}C$, and due to their high-efficiency of 24.7%, as reported by the Panasonic (Sanyo) group. The use of thinner wafers and the enhancement of cell performance with fabrication at low temperature have been special interests of the researchers. The fundamental understanding of the band bending structures, choice of materials, fabrication process, and nano-scale characterization methods to provide necessary understanding of the interface passivation mechanisms, emitter properties, and requirements for transparent oxide conductive layers is presented in this review. This information should be used for the performance characterization of the developing technologies for HIT solar cells.

Highly Flexible Dye-sensitized Solar Cell Prepared on Single Metal Mesh

  • Yun, Min Ju;Cha, Seung I.;Seo, Seon Hee;Lee, Dong Y.
    • Current Photovoltaic Research
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    • v.2 no.3
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    • pp.79-83
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    • 2014
  • Dye-sensitized solar cells (DSSCs) are applied in the emerging fields of building integrated photovoltaic and electronics integrated photovoltaic like small portable power sources as demands are increased with characteristic advantages. Highly flexible dye-sensitized solar cells (DSSCs) prepared on single stainless steel mesh were proposed in this paper. Single mesh DSSCs structure utilizing the spraying the chopped glass paper on the surface treated stainless steel mesh for integrating the space element and the electrode components, counter electrode component and photoelectrode component were coated on each side of the single mesh. The fabricated single mesh DSSCs showed the energy-conversion efficiency 0.50% which show highly bendable ability. The new single mesh DSSCs may have potential applications as highly bendable solar cells to overcome the limitations of TCO-based DSSCs.

Characterization of ${\mu}c$-Si:H Thin-film Solar Cells by Hot-wire CVD

  • Lee, J.C.;Chung, Y.S.;Kim, S.K.;Youn, K.H.;Song, J.S.;Park, I.J.;Kwon, S.W.;Lim, K.S.
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1598-1600
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    • 2003
  • Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

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Property of CdTe/CdS Solar Cells on Gamma-irradiation (방사선에 대한 CdTe/CdS 태양전지 특성 검토)

  • Kim, Ji-Yoo;Kim, Hwa-Jung;Park, Hae-Jun;Ha, Jang-Ho
    • Journal of Radiation Industry
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    • v.8 no.1
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    • pp.17-22
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    • 2014
  • In this study, we prepared CdTe/CdS solar cells using a thermal vacuum evaporation method. In particular, $CdCl_2$ treatment was attempted using this same method at $400^{\circ}C$ for 30 min. The prepared CdTe/CdS solar cells were investigated using Fouier transform infrared spectrometry (FTIR), field emission scanning electron microscopy (FE-SEM), and a solar simulator system including light absorption properties, morphological properties, and power conversion efficiency (PCE). In addition, we investigated the gamma-irradiation treatment at dose rates of 0 Gy, 500 Gy, 1 kGy, 10 kGy, and 30 kGy. The characteristics of gamma-irradiation treatment were studied based on the same method described above. In particular, it showed increased values as 0.826% higher than the non-irradiation of 0.448% from PCE analysis.

Recent Development of High-efficiency Silicon Heterojunction Technology Solar Cells (실리콘 이종접합 태양전지 개발동향)

  • Lee, Ahreum;Yoo, Jinsu;Park, Sungeun;Park, Joo Hyung;Ahn, Seungkyu;Cho, Jun-Sik
    • Current Photovoltaic Research
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    • v.9 no.4
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    • pp.111-122
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    • 2021
  • Silicon heterojunction technology (HJT) solar cells have received considerable attention due to advantages that include high efficiency over 26%, good performance in the real world environment, and easy application to bifacial power generation using symmetric device structure. Furthermore, ultra-highly efficient perovskite/c-Si tandem devices using the HJT bottom cells have been reported. In this paper, we discuss the unique feature of the HJT solar cells, the fabrication processes and the current status of technology development. We also investigate practical challenges and key technologies of the HJT solar cell manufacturers for reducing fabrication cost and increasing productivity.

A Study on Thin-Film Silicon Solar Cells with Multi-Architecture Etching Technique to Improve Light Trapping (광 포획 향상을 위한 다중 아키텍처 식각 기술을 적용한 박막 실리콘 태양전지에 관한 연구)

  • Hyeong Gi Park;Junsin Yi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.3
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    • pp.337-344
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    • 2024
  • This work focuses on improving the light-harvesting efficiency of thin-film silicon solar cells through innovative multi-architecture surface modifications. To create a regular optical structure, a lithographic process was performed to form it on a glass substrate through various etching processes, from Etch-1 to Etch-3. AZO was deposited on top of the structures and re-etched to create a multi-architectural surface. These surface-modified structures improved the light absorption and overall performance of the solar cell through changes in optical and physical properties, which we will analyze. In addition, we investigated the effect of post-cleaning on the etched glass structures through EDX analysis to understand the mechanism of the etching action. The results of this study are expected to provide important guidelines for the design and fabrication of solar cells and other photovoltaic devices.

Bulk Heterojunction Solar Cell using Ru Dye Attached PCBM

  • Il-Su Park;Jae-Keun Hwang;Yongseok Jun;Donghwan Kim
    • Journal of Electrochemical Science and Technology
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    • v.15 no.3
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    • pp.421-426
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    • 2024
  • Ru dye (Z-907) is a crucial photosensitizing material in dye-sensitized solar cells (DSSCs). To enhance the utilization of Ru dye's photosensitizing properties in bulk heterojunction solar cells, a method was developed to synthesize phenyl-C61-butyric acid methyl ester (PCBM) nanoparticles that are chemically linked to Ru dye. PCBM contains a methoxy (-OCH3) group, whereas Ru dye incorporates a carboxyl group (-COOH) within its molecular structure. By exploiting these complementary functional groups, a successful bond between Ru dye and PCBM was established through an anhydride functional group. The coupling of PCBM with Ru dye results in a modification of the energy levels, yielding lower LUMO (3.8 eV) and HOMO (6.1 eV) levels, compared with the LUMO (3.0 eV) and HOMO (5.2 eV) levels of Ru dye alone. This configuration potentially facilitates efficient electron transfer from Ru dye to PCBM, alongside promoting hole transfer from Ru dye to the conducting polymer. Consequently, the bulk heterojunction solar cells incorporating this Ru dye-PCBM configuration demonstrate superior performance, with an open circuit voltage (Voc) of 0.62 V, short circuit current (Jsc) of 0.63 mA cm-2, fill factor (FF) of 65.6%, and a photovoltaic conversion efficiency (η) of 0.25%.