• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.294-299
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• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.169-170
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• 2008

In this study, low temperature sintering property of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with sintering adds were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_3O_8$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_3O_8$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. In the case of SnO addition, the bulk density and dielectric constant were increased but quality factor was decreased with amount of SnO additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$+xwt%SnO ceramics were shifted to negative direction. The dielectric constant, quality factor and TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with 2.5wt% addition of SnO sintered at $830^{\circ}C$ for 1hr were 29.86, 35,800 GHz, -0.58 ppm/$^{\circ}C$, respectively.

• 한국세라믹학회지
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• 제46권3호
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• pp.271-274
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• 2009

Redox investigation of Sn and S ion was attempted in alkaline earth borosilicate glass melts with only 1 mol% $Na_2O$ by means of Square Wave Voltammetry (SWV). According to voltammograms, there was only one peak due to $Sn^{4+}/Sn^{2+}$ in melt doped with $SnO_2$. The calculated standard enthalpy and entropy of the reduction of $Sn^{4+}$ to $Sn^{2+}$ were 116kJ/mole and 62 J/mol K, respectively. The determined redox ratio, [$Sn^{2+}$] / [$Sn^{4+}$] in the temperature range of $1300{\sim}1600^{\circ}C$ was in $0.4{\sim}2.1$. On the contrary, in the voltammogram of melt doped with $BaSO_4$ there was no peak due to $S^{4+}/S^o$ but shoulder that might be attributed to the adsorption of sulfur at the electrode. The absence of the peak related with $S^{4+}/S^o$ was discussed from the view-point of the thermal decomposition behavior of $BaSO_4$ in the glass batch.

• 센서학회지
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• 제16권1호
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• pp.62-67
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• 2007

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin (Au/Sn) eutectic solder bonding. The membrane chip has 2.5 mm${\times}$2.5 mm, $0.5{\mu}m$ thick low stress silicon nitride membrane, 2 mm${\times}$2 mm Au/Ni/Cr membrane electrode, and $3{\mu}m$ thick Au/Sn layer. The backplate chip has 2 mm${\times}$2 mm, $150{\mu}m$ thick single crystal silicon rigid backplate, 1.8 mm${\times}$1.8 mm backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50-60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is $39.8{\mu}V/Pa$ (-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• 한국소음진동공학회논문집
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• 제16권12호
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• 한국재료학회지
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• 제22권7호
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• pp.358-361
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• 2012

Co and Ni as catalysts in $SnO_2$ sensors to improve the sensitivity for $CH_4$ gas and $CH_3CH_2CH_3$ gas were coated by a solution reduction method. $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates with an electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a chamber. The structural properties of $SnO_2$ with a rutile structure investigated by XRD showed a (110) dominant $SnO_2$ peak. The particle size of the $SnO_2$:Ni powders with Ni at 6 wt% was about 0.1 ${\mu}m$. The $SnO_2$ particles were found to contain many pores according to a SEM analysis. The sensitivity of $SnO_2$-based sensors was measured for 5 ppm of $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air to that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors coated with 6 wt% Ni. The $SnO_2$:Ni gas sensors showed good selectivity to $CH_4$ gas. The response time and recovery time of the $SnO_2$:Ni gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 20 seconds and 9 seconds, respectively.

• 청정기술
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• 제9권3호
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• pp.133-144
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• 2003

본 연구는 불용성 산화물계 촉매전극을 제조하고 이를 이용하여 난분해성 유기물질을 포함하고 있는 염색폐수를 대상으로 전해처리 실험을 수행하였으며, 이때 전해시스템에 사용된 가용성 전극(Fe, Al)과 불용성 전극 [SUS, R.C.E(Replaced Catalyst Electrode);금속산화물 전극]에 대한 환경오염물질의 처리 효율성과 각 전극에 대한 유용성 여부를 비교 고찰하였고, 또한 전해 처리 효율성을 극대화하기 위한 전해처리 조건들에 관해 조사하였다. 이 결과 오 폐수 처리를 위한 전기분해 공정의 실용화에 있어서 가장 큰 문제점 중의 하나인 전극 안정성은 불용성 산화물계 촉매전극을 제조 사용함으로써 해결될 수 있었으며 이에 따른 실험결과는 다음과 같다. 1. 불용성 전극인 R.C.E 제조시 $RuO_2-SnO_2-IrO_2-TiO_2$의 4성분계 혼합물의 몰 비가 70/20/5/5이 될 때 내구성이 가장 양호함을 확인 할 수 있었다. 2. 불용성 전극인 R.C.E를 이용한 염색폐수 처리 시 전극간 거리 5mm, 전해시간 60분, 인가전압 10 V, 처리 용량 $0.5{\ell}$의 실험 조건에서 90% 이상의 양호한 CODMn 처리효율을 얻을 수 있었으며 또한 T-N 제거에도 양호한 결과를 얻을 수 있었다.

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.297-302
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• 2014

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrode thin films with a resistivity of ~ 1,600 ${\mu}{\Omega}cm$ were grown on c-$Al_2O_3$ (0001) substrate. $ZnSnO_3$ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-$Al_2O_3$ (0001) substrates at a substrate temperature that ranged from 550 to $750^{\circ}C$ using Pulsed Laser Deposition (PLD). The secondary phase $Zn_2SnO_4$ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 ${\mu}C/cm^2$ and 48 kV/cm, respectively, were obtained in the ZTO film grown at $700^{\circ}C$ in 200 mTorr.

• 한국군사과학기술학회지
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• 제6권3호
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• pp.54-61
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• 2003

$SnO_2$ gas sensor for the detection DMMP, simulant of nerve gas was fabricated and its characteristics were examined. Sensing materials were $SnO_2$ added by TEX>$\alpha$-$Al_{2}O_{3}$ with 0∼20wt.% and $In_{2}O_{3}$ with 0∼3wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Its dimension was 7$\times$10$\times$0.6$\textrm{mm}^2$. Crystallite size 8t phase identification, specific surface area and morphology of fabricated $SnO_2$ powders were analyzed by X-ray diffraction(XRD), surface area analyzer(BET) and by a scanning electron microscope(SEM), respectively. Sensor was measured as flow type and sensor resistance change was monitored as real time using LabVIEW program. The best sensitivities were 75% at adding 4wt.% TEX>$\alpha$-$Al_{2}O_{3}$, operating temperature $300^{\circ}C$ and 87% at adding 2wt.% $In_{2}O_{3}$, operating temperature $350^{\circ}C$ to DMMP 0.5ppm. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with $\pm$3% in full scale. As a result, operating temperature was lower TEX>$\alpha$-$Al_{2}O_{3}$ than $In_{2}O_{3}$, but sensitivity was higher $In_{2}O_{3}$ than $\alpha$-$Al_{2}O_{3}$.

• Journal of Korean Society for Atmospheric Environment
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• 제20권E2호
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• pp.69-75
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• 2004

In this study, thin film gas sensor based on tin oxide was fabricated to examine its characteristics. Target gas is acetonitrile ($CH_3$CN) which is a blood simulant for the chemical warfare agent. Sensing materials are SnO$_2$ SnO$_2$/Pt, and Sn/Pt with thickness from 1000 to 3000 $\AA$. The sensor consists of a sensing electrode with inter-digit (IDT) type in front side and a heater in rear side. Resistance changes of sensing materials are monitored on real time basis using a data acquisition board with a 12-bit analog to digital converter. Sensitivities are measured at different operating temperatures also with different gas concentrations and film thickness. The high sensitivity is obtained for Sn (3000 $\AA$)/Pt (30 $\AA$) at 30$0^{\circ}C$ for 3 ppm. Response and recovery times were about 40 and 160 s, respectively. Repetition measurements showed very good results with $\pm$3% in full scale range.