• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.33.1-33.1
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• 2009

Lead-free (1-x)$(Na_{0.5}K_{0.5})NbO_3$-xBa($Ti_{0.9}Sn_{0.1})O_3$ [NKN-BTS-100x] ceramics doped with 1 mol% $MnO_2$ have been prepared by the conventional solid state method and their structural and piezoelectric properties were investigated. The NKN-BTS-100x ceramics exhibited a dense and homogeneous microstructure when they were sintered at $1030-1150^{\circ}C$. Grain growth was observed for the specimen sintered at relatively low temperature of $1050^{\circ}C$. A tetragonal/orthorhombic morphotropic phase boundary (MPB) in the perovskite structure was also appeared for the NKN-BTS-100x ceramics (0.04$1050^{\circ}C$. The enhanced piezoelectric properties in the NKN-BTS ceramics with a MPB composition were obtained. Especially, for the NKN-BTS-6 ceramics, a high dielectric constant (${\varepsilon}^T_3/\varepsilon_0=1,400$), piezoelectric constant ($d_{33}=237$) and electromechanical coupling factor ($k_p=0.42$) were obtained.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1437-1443
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• 2018

In this work, $SnO_2$ modified with reduced graphene oxide (rGO) and carbon nanotubes (CNTs) separately and combined sensitized by using the co-precipitation method and their sensing behavior toward ethanol vapor at room temperature were investigated. An interdigitated electrode (IDE) gold substrate is very expensive compared to a fluorine doped tin oxide (FTO) substrate; hence, we used the latter to reduce the fabrication cost. The structure and the morphology of the studied materials were characterized by using differential thermal analyses (DTA) and thermogravimetric analysis (TGA), transmission electron microscope (TEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Brunauer-Emmett-Teller surface area and Barrett-Joyner-Halenda (BJH) pore size measurements. The studied composites were subjected to ethanol in its gas phase at concentrations from 10 to 200 ppm. The present composites showed high-performance sensitivity for many reasons: the incorporation of $SnO_2$ and CNTs which prevents the agglomeration of rGO sheets, the formation of a 3D mesopourus structure and an increase in the surface area. The decoration with rGO and CNTs led to more active sites, such as vacancies, which increased the adsorption of ethanol gas. In addition, the mesopore structure and the nano size of the $SnO_2$ particles allowed an efficient diffusion of gases to the active sites. Based on these results, the present composites should be considered as efficient and low-cost sensors for alcohol.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.278.2-278.2
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• 2014

We have investigated the highly flexible and transparent Si-doped $In_2O_3$(ISO)/Ag/ISO multilayer grown on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering system. The electrical and optical properties of ISO/Ag/ISO multilayer electrodes depended on the insertion of a nano-size Ag layer. Due to the high conductivity of a nano-size Ag layer, the optimized ISO/Ag/ISO multilayer electrodes showed the lowest resistivity of $3.679{\times}10^{-5}Ohm-cm$, even though the ISO/Ag/ISO multilayer electrodes was sputtered at room temperature. Furthermore, the ISO/Ag/ISO multilayer electrodes exhibited a high transmittance of 86.33%, because of the anti-reflection effect, comparable to Sn-doped $In_2O_3$ (ITO) electrodes. In addition, the ISO/Ag/ISO multilayer electrodes had a very smooth surface morphology without surface defects and showed good flexibility. The flexible OSCs fabricated on ISO(30nm)/Ag(8nm)/ISO(30nm) multilayer electrode showed a power conversion efficiency of 3.272%. This result indicates that the ISO/Ag/ISO multilayer is a promising transparent conducting electrode for flexible OSCs.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.21-25
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• 2017

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.

• Bulletin of the Korean Chemical Society
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• v.32 no.6
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• pp.1865-1872
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• 2011

This study investigates the sensitivity of a gas sensor to volatile organic compounds (VOCs) at various operating temperatures and catalysts. Nano-sized powdered $WO_3$ prepared by sol-gel and chemical precipitation methods was mixed with various metal oxides. Next, transition metals (Pt, Ru, Pd, and In) were doped on the surface of the mixture. Metal-$WO_3$ thick films were prepared using the screen-printing method. The physical and chemical properties of the films were studied by SEM/EDS, XRD, and BET techniques. The measured sensitivity to VOCs is defined as the ratio ($R_a/R_g$) of resistance ($R_{air}$) of $WO_3$ film in the air to resistance ($R_{gas}$) of $WO_3$ film in a VOCs test gas. The sensitivity and selectivity of the films were tested with various VOCs such as acetaldehyde, formaldehyde, methyl alcohol, and BTEX. The thick $WO_3$ film containing 1 wt % of Ru and 5 wt % of $SnO_2$ showed the best sensitivity and selectivity to acetaldehyde gas at an operating temperature of 300 $^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.394-400
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• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R. F. magnetron sputtering technique. The electrochemical results for lithium secondary battery anodes showed that addition of silicon decreases the oxidic state of tin, and, hence, reduced the irreversible capacity during the first discharge/charge cycle. The (110),(101),(211) planes were grown with increasing substrate temperatures. The reversible capacity of thin films fabricated in conditions of $300^{\circ}C$ substrate temperature and 7:3 $Ar:O_2$ ratio was 700 mAh/g.

• Journal of Surface Science and Engineering
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• v.31 no.2
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• pp.109-116
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• 1998

Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{\circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}\Omega$cm, and the mobiiity from 10 to $14\textrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}\Omega$cm, and the mobility from 14 to $19\textrm{cm}^2$/Vs.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1352-1354
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• 1997

Transparent conductive thin films have found many application in many active and passive electronic and opto-electronic devices as like flat Panel display electrode and window heat mirror, etc. Low resistivity and high transmittance of this films can be obtained by controlling deposition parameters, which are oxygen partial Pressure, substrate temperature and dopant concentration. In this study, We prepared non-stoichiometric and Sb-doped thin films of tin dioxide by reactive DC magnetron sputtering technology. The lowest resistivity of about $3.0{\times}10^{-3}\;{\Omega}cm$ and 80% transmittance in the visible light region have heed obtained at optimal deposition condition.