Browse > Article
http://dx.doi.org/10.5573/ieie.2017.54.1.021

Schottky Barrier Diode Fabricated on Single Crystal β-Ga2O3 Semiconductor  

Kim, Hyun-Seop (School of Electronic and Electrical Engineering, Hongik University)
Jo, Min-Gi (School of Electronic and Electrical Engineering, Hongik University)
Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.54, no.1, 2017 , pp. 21-25 More about this Journal
Abstract
In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.
Keywords
Gallium oxide($Ga_2O_3$); Schottky barrier diode (SBD); single-crystal; power semiconductor;
Citations & Related Records
연도 인용수 순위
  • Reference
1 H. H. Tippins, "Optical Absorption and Photoconductivity in the Band Edge of ${\beta}-Ga_2O_3$," Phys. Rev., Vol. 140, no. 1A, pp. A316-A319, October 1965.   DOI
2 M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, "Gallium Oxide ($Ga_2O_3$) Metal-Semiconductor Field-Effect Transistors on Single-Crystal ${\beta}-Ga_2O_3$ (010) Substrates," Appl. Phys. Lett., Vol. 100, no. 1, p. 013504, January 2012.   DOI
3 K. Sasaki, A. Kuramata, T. Masui, E. G. Villora, K. Shimamura, and S. Yamakoshi, "Device-quality ${\beta}-Ga_2O_3$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy," Appl. Phys. Exp., Vol. 5, no. 3, p. 035502, March 2012.   DOI
4 B. J. Baliga, "Power Semiconductor Device Figure of Merit for High-Frequency Applications," IEEE Electron Device Lett., Vol. 10, no. 10, pp. 455-457, October 1989.   DOI
5 M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagaio, B. Monemar, A. Kuramata, T. Masui, and S. Yamakoshi, "Recent Advances in Gallium Oxide Device Technologies," Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Hakodate, Japan, 4-6 July 2016.
6 K. Sasaki, M. Higashiwaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, "First Demonstration of ${\beta}-Ga_2O_3$ Schottky Barrier Diode with Field Plate Edge Termination," International Conference on Solid State Devices and Materials (SSDM), p. 1076, Sapporo, Japan, 27-30 September 2015.
7 H. Murakami, K. Nomura, K. Goto, K. Sasaki, K. Kawara, Q. T. Thieu, R. Togashi, Y. Kumagai, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and A. Koukitu, "Homoepitaxial Growth of ${\beta}-Ga_2O_3$ Layers by Halide Vapor Phase Epitaxy," Appl. Phys. Exp., Vol. 8, no. 1, p. 015503, December 2014.   DOI
8 M. Higashiwaki, K. Sasaki, M. H. Wong, T. Kamimura, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, "Depletion-Mode $Ga_2O_3$ MOSFETs on ${\beta}-Ga_2O_3$ (010) Substrates with Si-Ion-Implanted Channel and Contacts," IEEE International Electron Devices Meeting (IEDM), pp. 28.7.1-28.7.4, Washington, USA, 9-11 December 2013.
9 M. H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, "Field-Plated $Ga_2O_3$ MOSFETs with a Breakdown Voltage of Over 750 V," IEEE Electron Device Lett., Vol. 37, no. 2, pp. 212-215, February 2016.   DOI
10 M. Higashiwaki, K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, "Temperature-Dependent Capacitance-Voltage and Current-Voltage Characteristics of Pt/$Ga_2O_3$ (001) Schottky Barrier Diodes Fabricated on ${n^-}-Ga_2O_3$ Drift Layers Grown by Halide Vapor Phase Epitaxy," Appl. Phys. Lett., Vol. 108, no. 13, p. 133503, March 2016.   DOI
11 K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, "$Ga_2O_3$ Schottky Barrier Diodes Fabricated by Using Single-Crystal ${\beta}-Ga_2O_3$ (010) Substrates," IEEE Electron Device Lett., Vol. 34, no. 4, pp. 493-495, April 2013.   DOI
12 M. Higashiwaki, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, "$Ga_2O_3$ Schottky Barrier Diodes with ${n^-}-Ga_2O_3$ Drift Layers Grown by HVPE," 2015 73rd Annual Device Research Conference (DRC), pp. 29-30, 21-24 June 2015.
13 B. Song, A. K. Verma, K. Nomoto, M. Zhu, D. Jena, and H. G. Xing, "Vertical $Ga_2O_3$ Schottky Barrier Diodes on Single-Crystal ${\beta}-Ga_2O_3$ (-201) Substrates," 2016 74th Annual Device Research Conference (DRC), 19-22 June 2016.