1 |
H. H. Tippins, "Optical Absorption and Photoconductivity in the Band Edge of ," Phys. Rev., Vol. 140, no. 1A, pp. A316-A319, October 1965.
DOI
|
2 |
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, "Gallium Oxide () Metal-Semiconductor Field-Effect Transistors on Single-Crystal (010) Substrates," Appl. Phys. Lett., Vol. 100, no. 1, p. 013504, January 2012.
DOI
|
3 |
K. Sasaki, A. Kuramata, T. Masui, E. G. Villora, K. Shimamura, and S. Yamakoshi, "Device-quality Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy," Appl. Phys. Exp., Vol. 5, no. 3, p. 035502, March 2012.
DOI
|
4 |
B. J. Baliga, "Power Semiconductor Device Figure of Merit for High-Frequency Applications," IEEE Electron Device Lett., Vol. 10, no. 10, pp. 455-457, October 1989.
DOI
|
5 |
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagaio, B. Monemar, A. Kuramata, T. Masui, and S. Yamakoshi, "Recent Advances in Gallium Oxide Device Technologies," Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Hakodate, Japan, 4-6 July 2016.
|
6 |
K. Sasaki, M. Higashiwaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, "First Demonstration of Schottky Barrier Diode with Field Plate Edge Termination," International Conference on Solid State Devices and Materials (SSDM), p. 1076, Sapporo, Japan, 27-30 September 2015.
|
7 |
H. Murakami, K. Nomura, K. Goto, K. Sasaki, K. Kawara, Q. T. Thieu, R. Togashi, Y. Kumagai, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and A. Koukitu, "Homoepitaxial Growth of Layers by Halide Vapor Phase Epitaxy," Appl. Phys. Exp., Vol. 8, no. 1, p. 015503, December 2014.
DOI
|
8 |
M. Higashiwaki, K. Sasaki, M. H. Wong, T. Kamimura, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, "Depletion-Mode MOSFETs on (010) Substrates with Si-Ion-Implanted Channel and Contacts," IEEE International Electron Devices Meeting (IEDM), pp. 28.7.1-28.7.4, Washington, USA, 9-11 December 2013.
|
9 |
M. H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, "Field-Plated MOSFETs with a Breakdown Voltage of Over 750 V," IEEE Electron Device Lett., Vol. 37, no. 2, pp. 212-215, February 2016.
DOI
|
10 |
M. Higashiwaki, K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, "Temperature-Dependent Capacitance-Voltage and Current-Voltage Characteristics of Pt/ (001) Schottky Barrier Diodes Fabricated on Drift Layers Grown by Halide Vapor Phase Epitaxy," Appl. Phys. Lett., Vol. 108, no. 13, p. 133503, March 2016.
DOI
|
11 |
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, " Schottky Barrier Diodes Fabricated by Using Single-Crystal (010) Substrates," IEEE Electron Device Lett., Vol. 34, no. 4, pp. 493-495, April 2013.
DOI
|
12 |
M. Higashiwaki, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, and S. Yamakoshi, " Schottky Barrier Diodes with Drift Layers Grown by HVPE," 2015 73rd Annual Device Research Conference (DRC), pp. 29-30, 21-24 June 2015.
|
13 |
B. Song, A. K. Verma, K. Nomoto, M. Zhu, D. Jena, and H. G. Xing, "Vertical Schottky Barrier Diodes on Single-Crystal (-201) Substrates," 2016 74th Annual Device Research Conference (DRC), 19-22 June 2016.
|