Highly Flexible and Transparent ISO/Ag/ISO Multilayer Grown by Roll-to-roll Sputtering System

  • Cho, Da-Young (Department of Advanced Materials Engineering for Information and Electronics, Kyung-Hee University) ;
  • Shin, Yong-Hee (Department of Advanced Materials Engineering for Information and Electronics, Kyung-Hee University) ;
  • Na, Seok-In (Graduate School of Flexible and Printable Electronics, Polymer Materials Fusion Research Center, Chonbuk National University) ;
  • Kim, Han-Ki (Department of Advanced Materials Engineering for Information and Electronics, Kyung-Hee University)
  • Published : 2014.02.10

Abstract

We have investigated the highly flexible and transparent Si-doped $In_2O_3$(ISO)/Ag/ISO multilayer grown on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering system. The electrical and optical properties of ISO/Ag/ISO multilayer electrodes depended on the insertion of a nano-size Ag layer. Due to the high conductivity of a nano-size Ag layer, the optimized ISO/Ag/ISO multilayer electrodes showed the lowest resistivity of $3.679{\times}10^{-5}Ohm-cm$, even though the ISO/Ag/ISO multilayer electrodes was sputtered at room temperature. Furthermore, the ISO/Ag/ISO multilayer electrodes exhibited a high transmittance of 86.33%, because of the anti-reflection effect, comparable to Sn-doped $In_2O_3$ (ITO) electrodes. In addition, the ISO/Ag/ISO multilayer electrodes had a very smooth surface morphology without surface defects and showed good flexibility. The flexible OSCs fabricated on ISO(30nm)/Ag(8nm)/ISO(30nm) multilayer electrode showed a power conversion efficiency of 3.272%. This result indicates that the ISO/Ag/ISO multilayer is a promising transparent conducting electrode for flexible OSCs.

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