• Korean Journal of Materials Research
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• v.10 no.12
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• pp.853-863
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• 2000

In this study, a new UBM materials system for solder flip chip interconnection of Cu pads were investigated using electroless copper (E-Cu) and electroless nickel (E-Ni) plating method. The interfacial reaction between several UBM structures and Sn-36Pb-2Ag solder and its effect on solder bump joint mechanical reliability were investigated to optimife the UBM materials design for solder bump on Cu pads. Fer the E-Cu UBM, continuous coarse scallop-like $Cu_{6}$ $Sn_{5}$ , intermetallic compound (IMC) was formed at the solder/E-Cu interface, and bump fracture occurred this interface under relative small load. In contrast, Fer the E-Ni/E-Cu UBM, it was observed that E-Ni effectively limited the growth of IMC at the interface, and the Polygonal $Ni_3$$Sn_4$ IMC was formed because of crystallographic mismatch between monoclinic $Ni_3$$Sn_4$ and amorphous E-Ni phase. Consequently, relatively higher bump adhesion strength was observed at E-Ni/E-Cu UBM than E-Cu UBM. As a result, it was fecund that E-Ni/E-Cu UBM material system was a better choice for solder flip chip interconnection on CU PadS.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.54-56
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• 2005

Ultrasonic soldering using of Si-wafer to FR-4 PCB atroom temperature was investigated. Sn3.5Ag foil rolled $100{\mu}m$ was used for solder. The UBM of Si-die was Cu/ Ni/ Al from top to bottom and its thickness was $0.4{\mu}m$, $0.4{\mu}m$, $0.3{\mu}m$ respectively. Pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom and its thickness was $0.05{\mu}m$, $5{\mu}m$, $18{\mu}m$ respectively. The ultrasonic soldering time was changed from 0.5sec to 3.0sec and its power 1400W. As experimental result, reliable bond joint by ultrasonic at room temperature was obtained. The shear strength increased with soldering time up to 2.5 sec. That means at 2.5sec, the shear strength showed maximum rate of 65.23N. The strength decreased to 33.90N at 3.0 sec because the cracks generated along the intermetallic compound between Si-wafer and Sn-3.5mass%Ag solder. intermetallic compound produced by ultrasonic between the solder and the Si-die was $(Cu, Ni)_{6}Sn_{5}$ and the intermetallic compound between solder and pad on FR-4 was $(Ni, Cu)_{3}Sn_{4}$.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.1
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• pp.35-39
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• 2011

Shearing characteristics of Sn-3.0wt%Ag-0.5wt%Cu ball for standardization of high speed shear test were investigated. The solder ball of 450 ${\mu}m$ in diameter was reflowed at $245^{\circ}C$ on FR4 PCB (Printed Circuit Board) to prepare a sample for the high-speed shear test. The metal pads on the PCB were OSP (Organic Solderability Preservative, Cu pad) and ENIG (Electroless Nickel/Immersion Gold, i.e CulNi/Au). Shearing speed was varied from 0.5 to 3.0 m/s, and tip height from 10 to 135 ${\mu}m$. As experimental results, for the OSP pad, a ductile fracture increased with tip height, and it decreased with shearing speed. In the case of ENIG pad, the ductile fracture increased with the tip height. The tip height of 10 ${\mu}m$ (2% of solder ball diameter) was unsuitable since the fracture mode was mostly pad lift. Shear energy increased with increasing shearing tip height from 10 to 135 ${\mu}m$ for both of OSP and ENIG pads.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.67-73
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• 2001

To investigate the relationships of solder joint characteristics with solder composition and A:V ratio (solder volume per pad area), Sn-37Pb and Sn-4.0Ag-0.5Cu solder balls with 330, 400, 450 and $457{\mu}{\textrm}{m}$ size were reflowed on same substrate. Sn-37Pb and Sn-4.0Ag-0.5Cu was reflowed at $220^{\circ}C$ and $240^{\circ}C$ respectively by IR-type soldering machine. As a result of reflowed solder- ball diameter(D) and height(H) measurement, D/H was decreased with solder ball size increment in range of 330~450 ${\mu}{\textrm}{m}$. But, D/H was increased in the solder joint for 457 ${\mu}{\textrm}{m}$ size, it was caused possibly by decrement of solder ball height increment compared with solder volume increment. As a result of shear and pull test, joint strength with A:V ratio was high. Joint strength of Sn-4.0Ag-0.5Cu was higher than Sn-37Pb. However, Sn-37Pb had more stable solder joint of small standard deviation. A thick and clean scallop type Ni-Cu-Sn intermetallic compound layer was formed in high A:V ratio and Sn-4.0Ag-0.5Cu solder joint interface.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.235-237
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• 2007

In this paper, fabrication of Sn-3.0Ag-0.5Cu solder bumping having accurate composition and behavior of intermetallic compounds(IMCs) growth at interface between Sn-Ag-Cu bumps and Cu substrate were studied. The ternary alloy of the Sn-3.0Ag-0.5Cu solder was made by two binary(Sn-Cu, Sn-Ag) electroplating on Cu pad. For the manufacturing of the micro-bumps, photo-lithography and reflow process were carried out. After reflow process, the micro-bumps were aged at $150^{\circ}C$ during 1 hr to 500 hrs to observe behavior of IMCs growth at interface. As a different of Cu contents(0.5 or 2wt%) at Sn-Cu layer, behavior of IMCs was estimated. The interface were observed by FE-SEM and TEM for estimating of their each IMCs volume ratio and crystallographic-structure, respectively. From the results, it was found that the thickness of $Cu_3Sn$ layer formed at Sn-2.0Cu was thinner than the thickness of that layer be formed Sn-0.5Cu. After aging treatment $Cu_3Sn$ was formed at Sn-0.5Cu layer far thinner.

• Journal of Welding and Joining
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• v.21 no.2
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• pp.97-101
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• 2003

The change of microstructures in the base metal during transient liquid phase bonding process of directionally Ni base superalloy, GID-111 was investigated. Bonds were fabricated using a series of holding times(0~7.2ks) at three different temperatures. The flip chip bonding utilizing self-aligning characteristic of solder becomes mandatory to meet tolerances for the optical device. In this paper, a parametric study of aging condition and pad size of samples was evaluated. A TiW/Cu/electroplated Cu UBM structure was selected and the samples were aging treated to analyze the effect of intermetallic compounds with the time variations. An FIB technique was applied to the preparation of samples for TEM observations. An FIB technique is very useful to prepare TEM thin foil specimens from the solder joint interface. After aging treatment, the tendency to decrease in shear strength was measured and the structure of the solder and the UBM was observed by using SEM, TEM and EDS. As a result, the shear strength was decreased of about 21% in the 100${\mu}{\textrm}{m}$ sample at 17$0^{\circ}C$ aging compared with the maximum shear strength of the sample with the same pad size. In the case of the 12$0^{\circ}C$ aging treatment, 18% of decrease in shear strength was measured at the 100${\mu}{\textrm}{m}$ pad size sample. An intermetallic compound of Cu6Sn5 and Cu3Sn were also observed through the TEM measurement by using.

• ETRI Journal
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• v.35 no.6
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• pp.1152-1155
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• 2013

A cost-effective and simple solder on pad (SoP) process is proposed for a fine-pitch microbump interconnection. A novel solder bump maker (SBM) material is applied to form a 60-${\mu}m$ pitch SoP. SBM, which is composed of ternary Sn3.0Ag0.5Cu (SAC305) solder powder and a polymer resin, is a paste material used to perform a fine-pitch SoP through a screen printing method. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder, the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. Test vehicles with a daisy chain pattern are fabricated to develop the fine-pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si chip has 6,724 bumps with a 45-${\mu}m$ diameter and 60-${\mu}m$ pitch. The chip is flip chip bonded with a Si substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of the underfill. The optimized bonding process is validated through an electrical characterization of the daisy chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and microbump interconnection using a screen printing process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2217-2220
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• 2007

In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.204-207
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• 2003

The flip chip bonding utilizing self-aligning characteristic of solder becomes mandatory to meet to tolerances for the optical device. In this paper, a parametric study of aging condition and pad size of sample was conducted. A TiW/Cu UBM structure was adopted and sample was aging treated to analyze the effect of intermetallic compound with time variation. After aging treatment, the tendency to decrease in shear strength was measured and the structure of the fine joint area was observed by using SEM, TEM and EDS. In result, the shear strength was decreased of about 20% in the $100{\mu}m$ sample at $170^{\circ}C$ aging compared with the maximum shear strength of same pad size sample. In the case of the $120^{\circ}C$ aging treatment, 17% of decrease in shear strength was measured at the $100{\mu}m$ pad size sample. Also, intremetallic compound of $Cu_6Sn_5$ and $Cu_3Sn$ were observed through the TEM measurement by using an FIB technique that is very useful to prepare TEM thin foil specimens from the solder joint interface.

• ETRI Journal
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• v.35 no.2
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• pp.340-343
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• 2013

A novel bumping process using solder bump maker is developed for the maskless low-volume solder on pad (SoP) technology of fine-pitch flip chip bonding. The process includes two main steps: one is the aggregation of powdered solder on the metal pads on a substrate via an increase in temperature, and the other is the reflow of the deposited powder to form a low-volume SoP. Since the surface tension that exists when the solder is below its melting point is the major driving force of the solder deposit, only a small quantity of powdered solder adjacent to the pads can join the aggregation process to obtain a uniform, low-volume SoP array on the substrate, regardless of the pad configurations. Through this process, an SoP array on an organic substrate with a pitch of $130{\mu}m$ is successfully formed.