• The Korean Journal of Ceramics
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• 제4권3호
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• pp.235-239
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• 1998

Ultrafine $SnO_2$ powder was prepared by the diffusion mixing gas-phase reaction of $SnCl_4$(g) and water vapor. The effects of reaction variables, such as the chloride partial pressure, the reaction temperature, and the residence time is the reactor, on the powder size were examined systematically. Calculated concentration and distribution of chemical species, using the Burke-Schumann diffusion mixing model, were compared with the experimetal results. The effects of the reaction variables on the powder size were also discussed qualitatively.

• 마이크로전자및패키징학회지
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• 제13권1호통권38호
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• pp.7-15
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• 2006

63Sn-37Pb 솔더의 실시간 electromigration 거동 관찰을 박막형 edge 이동 선형시편과 주사전자현미경을 이용하여 실시하였다. 공정조성 63Sn-37Pb 솔더의 electromigration에 의한 edge 이동 잠복기는 $90{\sim}110^{\circ}C$에서 뚜렷하게 존재하였다. 온도에 따른 electromigration 우선확산원소는 실험온도 $90{\sim}110^{\circ}C$에서 Pb, $25{\sim}50^{\circ}C$에서는 Sn으로 나타났고, $70^{\circ]C$에서는 Sn과 Pb가 거의 동시에 이동하여 우선확산 원소가 관찰되지 않았다. $90{\sim}110^{\circ}C$에서 관찰된 SnPb의 electromigration에 의한 edge 이동 잠복기는 Pb 우선이동에 의해 발생되었다. 이러한 edge 이동 잠복기의 존재는 플립칩 (flip chip) 솔더범프의 수명과 밀접한 관계를 가지는 것으로 보인다. Electromigration에 의해 발생되는 SnPb 솔더의 우선확산원소의 온도 의존성은 Pb와 Sn의 확산계수와 함께 $Z^*$ (전기장내의 유효전하 수)도 크게 영향을 미치는 것으로 생각된다.

• 한국표면공학회지
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• 제51권5호
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• pp.297-302
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• 2018

The important drawback of hardware fasteners consisted of 304 stainless steel (STS) is a frequent galling caused by a combination of friction and adhesion between the sliding surface. To improve the anti-galling effect, Sn-Al coatings by a thermal diffusion have been developed. The thermal diffusion by pack cementation with an $AlCl_3$ activator at $250^{\circ}C$ for 1 hour produced an Sn-Al alloy coating layer with an average thickness of $9.9{\pm}0.5{\mu}m$ on the surface of 304 STS fasteners. Compared with the galling frequency of the 304 STS fasteners, Sn-Al coatings on the surface of 304 STS fasteners demonstrated about 2.8-time reduction of the galling frequency.

• 대한치과보철학회지
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• 제30권4호
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• pp.481-492
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• 1992

Author measured the bonding strength between Dental Porcelain and Nonprecious Dental Alloy and analyzed diffusion Phenomena at the interfaceby by Auger electron spectroscopy and also Electron spectroscopy for Chemical Analysis. The each specimen was sputtered with Al, Cr, In and Sn. 1. Ni whic is the main element of the matris of dental nonprecious alloy diffuse more than the other element and the Ni diffusion rate of each specimen was well coordinated with the bonding strength of each. 2. The Sn thin film suppress the diffusion rate of Ni of matrix into the Dental Porcelain than the In or Cr thin films. 3. The Al thin film suppress the diffusion rate of Ni than the Sn thin film. 4. The main coponent of dental porcelain : Al, Si, Mo diffused into the matrix of alloy. It means that the each element of dental alloy and dental porelain diffused into the each other part.

• 한국표면공학회지
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• 제55권6호
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• pp.408-416
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• 2022

In this study, the effect of Au-Sn alloy coating on reliability of electrical contacts was investigated via comparison with Au-Co alloy coating. The results show that Au-Sn alloy exhibited lower contact resistance and higher solder spreadability than those of Au-Co alloy after thermal aging. In the case of Au-Co alloy plating, the underlying Ni element diffused into Au-Co layer to form Ni oxides on surface during thermal aging, leading to increased contact resistance and decreased solder spreadability. Meanwhile, for Au-Sn alloy plating, Au-Ni-Sn metallic compound was formed at the interface between Au-Sn layer and underlying Ni layer. This compound acted as a diffusion barrier, thereby inhibiting the diffusion of Ni to Au-Sn layer during thermal aging. Consequently, Au-Sn alloy layer showed better contact reliability than that of Au-Co alloy layer.

• 한국산업융합학회 논문집
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• 제4권4호
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• pp.451-455
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• 2001

The epitaxial growth of Ge on the clean and surfactant(Sn) adsorbed surface of Ge(111) was studied by the intensity oscillation of a RHEED specular spot. In the case of epitaxial growth without the adsorbed surfactant, the RHEED intensity oscillation was stable and periodic up to 24ML at the substrate temperature of $200^{\circ}C$. Therefore the optimum temperature for the epitaxial growth of Ge on clean Ge(111) seems to be $200^{\circ}C$. However, in the case of epitaxial growth with the adsorbed surfactant, the irregular oscillations are observed in the early stage of the growth. The RHEED intensity oscillation was very stable and periodic up to 38ML, and the $d2{\times}2$ structure was not charged with continued adsorption of Ge at the substrate temperature of $200^{\circ}C$. These results may be explained by the fact that the diffusion length of Ge atoms is increased by decreasing the activation energy of the Ge surface diffusion, resulted by segregation of Sn toward the growing surface. From the desorption process, the desorption energy of Sn in Ge $\sqrt{5}{\times}\sqrt{5}$ structure is observed to be 3.28eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• 한국수소및신에너지학회논문집
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• 제13권3호
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• pp.242-248
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• 2002

SnCo alloy powder prepared by high energy ball milling is examined as an anode material for lithium-ion batteries. As the ball-milling time increased, the crystallinity of SnCo decreased. XRD and TEM SADP showed that nanocrystalline and amorphous phase coexisted after 16 h ball-milling. As the crystallinity decreased, the cycleability increased. At first cycle, there are 4 plateau potentials. The observation of voltage plateau at about 0.68 V confirms the formation of Sn-Li alloy and Co metal. It is considered that The plateau potentials below 0.68 V were reaction between Li and Sn. The change of chemical diffusion coefficient showed that the structure of SnCo alloy abruptly changed at first cycle, and maintained after 2nd cycle.

• 한국재료학회지
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• 제12권3호
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• pp.225-230
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• 2002

Sn was selected as an alloying element of Cu. The Cu-Sn thin layers were deposited on the Si substrates by the electroplating method and their properties were studied. By rapidly thermal annealing(RTA) up to 40$0^{\circ}C$ after electroplating, sheet resistance decreased and adhesion strength increased, but that trend was reversed at the 50$0^{\circ}C$ RTA. Cu-Sn particles grew dense and the surface was uniform up to 40$0^{\circ}C$, but at 50$0^{\circ}C$, empty area was introduced and the surface became rough owing to oxidation and particle coarsening and agglomeration. Deposited layer contained significant amount of Si, while pure Cu-Sn layer with the composition ratio of 90:10 was present only on the top surface. However, no significant change in the Cu composition within alloy layers occured by the RTA regardless of its temperature. This indicates that the Cu diffusion into the Si was suppressed by the presence of Sn.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 1999년도 제1회 학술대회논문집(KIASC 1st conference 99)
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• pp.14-17
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• 1999

Four designed $Nb_{3}$Sn superconductors have been fabricated in order to investigate the effect of pre-heat treatment for internal tin process. 3 types of sub-elements and 2 types of Sn reservers were fabricated. Diffusion of Sn is better in the strand divided Sn equally than in the strand had one large Sn reserver during pre heat-treatment.