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http://dx.doi.org/10.3740/MRSK.2002.12.3.225

A Study on the Metallization Properties of Cu-Sn Alloy Layers Deposited by the Electroplating Method  

Kim, Ju-Yeon (Department of Electronic Materials Engineering, The University of Suwon)
Bae, Gyu-Sik (Department of Electronic Materials Engineering, The University of Suwon)
Publication Information
Korean Journal of Materials Research / v.12, no.3, 2002 , pp. 225-230 More about this Journal
Abstract
Sn was selected as an alloying element of Cu. The Cu-Sn thin layers were deposited on the Si substrates by the electroplating method and their properties were studied. By rapidly thermal annealing(RTA) up to 40$0^{\circ}C$ after electroplating, sheet resistance decreased and adhesion strength increased, but that trend was reversed at the 50$0^{\circ}C$ RTA. Cu-Sn particles grew dense and the surface was uniform up to 40$0^{\circ}C$, but at 50$0^{\circ}C$, empty area was introduced and the surface became rough owing to oxidation and particle coarsening and agglomeration. Deposited layer contained significant amount of Si, while pure Cu-Sn layer with the composition ratio of 90:10 was present only on the top surface. However, no significant change in the Cu composition within alloy layers occured by the RTA regardless of its temperature. This indicates that the Cu diffusion into the Si was suppressed by the presence of Sn.
Keywords
cu metallization; Cu diffusion; Cu-Sn alloy layer; Electroplating;
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  • Reference
1 S.P. Murarka, in Proceedings of the Workshop on 'Tungsten and Other Advanced Metals for ULSI Application 1990', edited by G. C. Smith and R. Blumarthal (MRS, Pittsburgh, PA, 1991), 179 (1991)
2 D. Temple and A. Reisman, J. Electrochem. Soc., 136, 3525 (1989)   DOI
3 Shi-Qing Wang, MRS Bulletin, XIX (8), 30 (1994)
4 A.J. Cabrera, J.F. Kirner, and J.N. Armor, J. Mater. Res., 6, 71 (1990)   DOI
5 W.A. Lanford, P.J. Ding, W. Wang, S. Hymes, and S.P. Murarka, Thin Solid Films, 262, 234 (1995)   DOI   ScienceOn
6 H.L. Cho, and J.G. Lee, MRS Symp. Proc., Vol-564, 353 (1999)   DOI
7 R.L. Jackson, E. Broadbent, T. Cacouris, A. Harrus, M. Biberger, E. Patton, and T. Walsh, Solid State Technol., 41(3), 50 (1998)
8 P.J. Ding, W.A. Langford, S. Hymes, and S. P. Murarka, Appl. Phys. Lett., 64(21), 2897 (1994)   DOI   ScienceOn
9 C. Cabral, Jr., J.M.E. Harper, K. Holloway, D.A. Smith, and R. G. Schad, J. Vac. Sci. Technol. A. 10(4), 1706 (1992)   DOI
10 J. Li, J.W. Mayer, and E.G. Colgan, J. Appl. Phys. 70(5), 2820 (1991)   DOI