• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.50-54
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• 1999

$(Pb_xLa_{1-x}) (Zr_yTi_{1-y})O_3$ (PLZT) thin films with electrooptic effect are promising for the optical application such as display or light shutter. However, it is difficult to use inexpensive and transparent glass substrates because the conventional process for preparation of PLZT requires temperatures above $600^{\circ}C$. In order to deposit a perovskite PLZT thin films at low processing temperatures through alkoxide route, we have offered several seeding processes which reduce the activation energy for crystallization. In this study, we optimized the stacking structure of multilayered PLZT for obtaining single phase perovskite at lower temperatures. As a result, ferroelectric PLZT thin films with different compositions were successfully prepared at a temperature as low at $500^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.196-199
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• 2000

Since the reports of CMR(colossal magnetoresistance) effects in some single crystal R-P phase $La_{1+x}Sr_{2-x}Mn_2O_7$, considerable researches have been carried out to find optimum composition and to understand the role of dimensionality in the CMR mechanism of this system. In this study, layered perovskite $Ln_xCa_{1-x}MnO_{4}$ (x=0.5, Ln=Pr, Nd, Sm, Gd) phases were synthesized by solid state reaction and their structures were refined by Rietveld method. Electrical and magnetic properties were measured between room temperature and liquid helium temperature and compared with those of two dimensional $La_{1.4}Sr_{1.6}Mn_2O_7$ phase.

• Advances in materials Research
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• v.2 no.3
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• pp.173-180
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• 2013

Lead-free complex perovskite ceramics $NaMeO_3$ ($Me{\equiv}Nb$, Ta) were synthesized using conventional solid state reaction technique and characterized by structural, FTIR and electrical (dielectric and ac conductivity) studies. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. XRD analysis of the compound indicated the formation of single-phase orthorhombic structure with the space group Pmmm (47). Dielectric studies showed the diffuse phase transition at $394^{\circ}C$ for $NaNbO_3$ and $430^{\circ}C$ for $NaTaO_3$. Ac conductivity in both the compounds follows Jonscher's power law.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.178-183
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• 2016

Ferroelectric relaxor ceramics with $BaTiO_3-NaNbO_3-Bi(Mg_{1/2}Ti_{1/2})O_3$ ternary compositions (BT-NN-BMT) have been prepared by sol-gel powder synthesis and consequent bulk ceramic processing. Through the modified chemical approach, fine and single-phase complex perovskite compositions were successfully obtained. Temperature and frequency dependent dielectric properties indicated typical relaxor characteristics of the BT-NN-BMT compositions. The ferroelectric-paraelectric phase transition became diffusive when NN and BMT were added to form BT based solid solutions. BMT additions to the BT-NN solid solutions affected the high temperature dielectric properties, which might be attributable to the compositional inhomogeneity of the complex perovskite and resulting weak dielectric coupling of the Bi-containing polar nanoregions (PNRs). The temperature stability of the dielectric properties was good enough to satisfy the X9R specification. The quasi-linear P-E response and the temperature- stable dielectric properties imply the high potential of this ceramic compound for use in high temperature capacitors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.1
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• pp.6-11
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• 2019

Methylammonium lead halide ($MAPbX_3$, X = I, Br) thin films, used as the light absorber of perovskite solar cells, were prepared using the dual feed ultrasonic spray method. Going through a deposition at a substrate temperature of below $60^{\circ}C$ and then a final heat treatment at $75^{\circ}C$ for 5 minutes using dual feed ultrasonic spray method, $MAPbI_3$ single phase could be formed. Whereas undergoing a deposition at temperatures above $80^{\circ}C$, the spheroidal grains could be changed into rod-shaped fractal structures due to the decomposition of the perovskite phase. Furthermore, using the same method at a higher heat treatment temperature of $100^{\circ}C$, $MAPbI_{3-x}Br_x$ thin films could also be formed from $MAPbI_3$ and $MAPbIBr_2$ solution.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.282-289
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• 2000

$PbTiO_3$ films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD). Deposition characteristics of $PbTiO_3$films on $RuO_2$ and Pt substrates were investigated with varying the flow rate of metalorganic source and substrate temperature. The residence time of Pb-oxide molecules in much longer on $RuO_2$ than on Pt substrate, while the perovskite nucleation is more difficult on $RuO_2$ than on Pt substrate. Therefore, the process conditions to obtain the single perovskite $PbTiO_3$ phase are more restricted on $RuO_2$ than on Pt substrates. An introduction of Ti-oxide seed layer increases perovskite nucleation density and thus enlarges the process window to obtain the single perovkite phase. The introduction of Ti-oxide seed layer make the PZT film that Ti-components of $PbTiO_3$ are partially substituted with Zr atoms have single perovskite phase for the wide range of Zr/(Zr+Ti) concentration ratios.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1152-1157
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• 1998

The PZT films were deposited on the Pt/Ti/$SiO_2$/Si substrates using multi- target DC magnetron reactive sputtering. The perovskite single phase with the composition close to the stoichiometric one, was obtained even at high substrate temperature of $540^{\circ}C$ by 2-step method, which is that PZT film was deposited for a short time at low substrate temperature ($480^{\circ}C$) to promote the nucleation of perovskite phase by reducing the volatility of Pb oxide molecules, followed by the deposition at the elevated temperature to suppress the excess incorporation of Pb component in the PZT film. This two-step method, in combination with the RTA treatment, gives rise to good electrical properties of the deposited PZT films: remanent polarifaion,$18\mu$C/$\textrm{cm}^2$; coercive field, 45kV/cm; leakage current of 10$^{-4}$ A/$\textrm{cm}^2$ at high electric field of -500kV/cm.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.18-19
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• 2006

In this study, dielectric properties of the ${Mg_5}{B_4}{O_{15}}$ (B=Ta, Nb) cation-deficient perovskite ceramics and its oscillator application are investigated. The cation-deficient perovskite ceramics are prepared through the solid-state route. According to the XRD pattern, ${Mg_4}{Ta_2}{O_9}$ and $Mg{Ta_2}{O_6}$ phase existed in calcined and sintered ${Mg_5}{Ta_4}{O_15}$ powder. Also ${Mg_5}{Ta_4}{O_{15}}$ phase added with increasing sintering temperature. In the case of calcined and sintered ${Mg_5}{Nb_4}{O_{15}}$ powder, single phase of ${Mg_5}{Nb_4}{O_{15}}$ is appeared. In the case of the ${Mg_5}{Ta_4}{O_{15}}$ and ${Mg_5}{Nb_4}{O_{15}}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, $-10.91ppm/^{\circ}C$ and 14, 37,350 GHz, $-52.3\;ppm/^{\circ}C$, respectively. Simulated DR with ${Mg_5}{Ta_4}{O_{15}}$ ceramics had the operating frequency of 10.99 GHz and S(2,1) of -29.795 dB. Size of manufactured oscillator was $56{\times}48{\times}34\;mm^3 and operated at 11.93 GHz. Power output and second harmonic of oscillator were +13.61 dBm and -23.81 dBc at 23.85 GHz, respectively.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.453-458
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• 2008

New inorganic red pigments based on Cr-doped $Y_2O_3$ and $Al_2O_3$ were synthesized by solid state method and characterization of their pigments were characterized by using XRD, FT-IR, SEM and UV-Vis spectrophotometer. The single perovskite phase revealed at $1450^{\circ}C{\sim}1550^{\circ}C$ for 6 h due to using mineralizers. The color of pigment powders resulted out various red-shades depending on the compositions of used materials and temperatures. Glazed tiles painted with pigment powders showed red color in oxidation and reduction firing. The best red colour was obtained when the $Cr_2O_3$ was used 0.04 mole at $1450^{\circ}C$ for 6 h.