• The KIPS Transactions:PartA
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• v.13A no.5 s.102
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• pp.413-420
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• 2006

Most vendors of digital signal processors (DSPs) support a Harvard architecture, which has two or more memory buses, one for program and one or more for data and allow the processor to access multiple words of data from memory in a single instruction cycle. We already addressed how to efficiently assign data to multi-memory banks in our previous work. This paper reports on our recent attempt to optimize run-time memory. The run-time environment for dual data memory banks (DBMBs) requires two run-time stacks to control activation records located in two memory banks corresponding to calling procedures. However, activation records of two memory banks for a procedure are able to have different size. As a consequence, dual run-time stacks can be unbalanced whenever a procedure is called. This unbalance between two memory banks causes that usage of one memory bank can exceed the extent of on-chip memory area although there is free area in the other memory bank. We attempt balancing dual run-time slacks to enhance efficiently utilization of on-chip memory in this paper. The experimental results have revealed that although our algorithm is relatively quite simple, it still can utilize run-time memories efficiently; thus enabling our compiler to run extremely fast, yet minimizing the usage of un-time memory in the target code.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.486-490
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• 2004

Programmable logic controller (PLC) is widely used in manufacturing system or process control. This paper presents the design of a 32-bit microprocessor for a sequence control using an Application Specification Integrated Circuit (ASIC). The 32-bit microprocessor was designed by a VHDL with top down method; the program memory was separated from the data memory for high speed execution of 274 specified sequence instructions. Therefore it was possible that sequence instructions could be operated at the same time during the instruction fetch cycle. And in order to reduce the instruction decoding time and the interface time of the data memory interface, an instruction code size was implemented by 32-bits. And the real time debugging as single step run, break point run was implemented. Pulse instruction, step controller, master controllers, BIN and BCD type arithmetic instructions, barrel shit instructions were implemented for many used in PLC system. The designed microprocessor was synthesized by the S1L50000 series which contains 70,000 gates with 0.65um technology of SEIKO EPSON. Finally, the benchmark was performed to show that designed 32-bit microprocessor has better performance than Q4A PLC of Mitsubishi Corporation.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.4
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• pp.389-394
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• 2010

This paper describes the conceptual design of mass memory unit for high speed data processing and mass memory management in the STSAT-3 compared to that of STSAT-2. The FPGA directly controls the data receiving from two payloads with the maximum 100Mbps speed and 32Gb mass memory management to satisfy these requirements. We used SRAM-based FPGA from XILINX having fast operating speed and large logic cells. Therefore, the Triple Modular Redundancy(TMR) and configuration memory scrubbing techniques will also be used to protect FPGA from Single Event Upset(SEU) in space.

• ETRI Journal
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• v.37 no.6
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• pp.1188-1198
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• 2015

In this paper, a multi-time programmable (MTP) cell based on a $0.18{\mu}m$ bipolar-CMOS-DMOS backbone process that can be written into by using dual pumping voltages - VPP (boosted voltage) and VNN (negative voltage) - is used to design MTP memories without high voltage devices. The used MTP cell consists of a control gate (CG) capacitor, a TG_SENSE transistor, and a select transistor. To reduce the MTP cell size, the tunnel gate (TG) oxide and sense transistor are merged into a single TG_SENSE transistor; only two p-wells are used - one for the TG_SENSE and sense transistors and the other for the CG capacitor; moreover, only one deep n-well is used for the 256-bit MTP cell array. In addition, a three-stage voltage level translator, a VNN charge pump, and a VNN precharge circuit are newly proposed to secure the reliability of 5 V devices. Also, a dual memory structure, which is separated into a designer memory area of $1row{\times}64columns$ and a user memory area of $3rows{\times}64columns$, is newly proposed in this paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.240-240
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• 2010

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (~5.2 eV) and extremely high dot density (${\sim}\;1.2{\times}10^{13}/cm^2$) was fabricated. Its structural effect for multiple layers was evaluated and compared to one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with 2-4 multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN)-tunneling could be a candidate structure for future flash memory.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.418-425
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• 2012

In this paper, efficient implementation of error correction code (ECC) processing circuits based on single error correction and double error detection (SEC-DED) code with check bit pre-computation is proposed for memories. During the write operation of memory, check bit pre-computation eliminates the overall bits computation required to detect a double error, thereby reducing the complexity of the ECC processing circuits. In order to implement the ECC processing circuits using the check bit pre-computation more efficiently, the proper SEC-DED codes are proposed. The H-matrix of the proposed SEC-DED code is the same as that of the odd-weight-column code during the write operation and is designed by replacing 0's with 1's at the last row of the H-matrix of the odd-weight-column code during the read operation. When compared with a conventional implementation utilizing the odd-weight- column code, the implementation based on the proposed SEC-DED code with check bit pre-computation achieves reductions in the number of gates, latency, and power consumption of the ECC processing circuits by up to 9.3%, 18.4%, and 14.1% for 64 data bits in a word.

• Journal of the Korean Society for Heat Treatment
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• v.15 no.1
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• pp.9-15
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• 2002

Deformation behavior of nickel-rich Ti-51.5at.%Ni single crystals was investigated over a wide range of temperatures(77 to 440K) and strain levels(up to 9%) in compression. These alloys combined superior strength with wide range of pseudoelasticity temperature interval(~200K). The slip deformation in [001] orientation did not occur due to the prevailing slip system, and consequently, exhibited pseudoelastic deformation at temperatures ranging from 77 to 283K and 273 to 440K for the solutionized and over-aged cases, respectively. The critical transformation stress levels were in the range of 800 to 1800MPa for the solutionized case, and 200 to 1000MPa for the over-aged case depending on the temperature and specimen orientation. These stress levels are considerably higher compared to these class of alloys having lower Ni contents. The maximum transformation strains, measured from incremental straining experiments in compression, were lower compared to the phenomenological theory with Type II twinning. A compound twinning model depending on the successive austenite(B2) to intermediate phase(R) to martensite(B19') transformation predicts lower transformation strains compared to the Type II twinning case.

• Journal of Astronomy and Space Sciences
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• v.18 no.2
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• pp.109-118
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• 2001

KITSAT-1, launched in 1992, passes through Inner Van Allen Radiation Belt in which high energy Protons cause single event upsets(SBUs) in the main memory of KITSAT-1 OBC(On-Board Computer) 186. The present paper compares SEU data from the OBC186 with the AP-8 model of NASA/NSSDC using the Chi-Square method to estimate the SEU threshold energy. Shielding effect by the satellite body has been taken into account to model the proton fluxes at the position of OBC186, and SEUs recorded during the high solar activities have been removed to avoid the spurious result. The result shows that the SEU threshold energy of the main memory of KITSAT-1 OBC186 is estimated to be about $110{pm}10MeV$.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2207-2212
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• 2012

Dimethylaluminum isopropoxide (DMAI, $(CH_3)_2AlO^iPr$) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide ($AlO_x$) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited $AlO_x$ film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that ${\beta}$-hydrogen elimination mechanism is mainly contributed to the $AlO_x$ CVD process of DMAI precursor. The current-voltage characteristics of the $AlO_x$ film in Au/$AlO_x$/Ir metalinsulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than ${\sim}10^6$ with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.

• IEMEK Journal of Embedded Systems and Applications
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• v.14 no.2
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• pp.87-96
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• 2019

Low power issue is one of the most critical problems in the Internet of Things (IoT), which are powered by battery. To solve this problem, various approaches have been presented so far. In this paper, we propose a method to reduce the power consumption by reducing the numbers of accesses into the flash memory consuming a large amount of power for on-chip software execution. Our approach is based on using cooperative logging structure to distribute the sampling overhead in single sensor node to adjacent nodes in case of rare-event applications. The proposed algorithm to identify event occurrence is newly introduced with negative feedback method by observing difference between past data and recent data coming from the sensor. When an event with need of flash access is determined, the proposed approach only allows access to write the sampled data in flash memory. The proposed event detection algorithm (EDA) result in 30% reduction of power consumption compared to the conventional flash write scheme for all cases of event. The sampled data from the sensor is first traced into the random access memory (RAM), and write access to the flash memory is delayed until the page buffer of the on-chip flash memory controller in the micro controller unit (MCU) is full of the numbers of the traced data, thereby reducing the frequency of accessing flash memory. This technique additionally reduces power consumption by 40% compared to flash-write all data. By sharing the sampling information via LoRa channel, the overhead in sampling data is distributed, to reduce the sampling load on each node, so that the 66% reduction of total power consumption is achieved in several IoT edge nodes by removing the sampling operation of duplicated data.