• 한국재료학회지
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• 제30권4호
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.33-38
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• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.89-90
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• 2003

• 한국세라믹학회지
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• 제37권6호
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• pp.596-603
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• 2000

The hardness and elastic modulus of three bulk materials are computed from the load and displacement data which are measured during basic nanoindentation test and compared with values determined by independent means to assess the accuracy of the method. The results show that with this technique, modulus and hardness and elastic modulus profile through depth of silicon nitride and silicon oxynitride films. The results show that for silicon nitride film deposited on silicon, hardness and elastic modulus increase as the volume ratio of NH3 : SiH4, which had been used for deposition, increases up to 20.0; and for silicon oxynitride film on silicon, the hardness and elastic modulus profile changes distinctly as the relative amount of oxygen in deposition gas mixture changes.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.231-236
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• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• 대한전자공학회논문지
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• 제24권3호
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• pp.453-458
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• 1987

Amorphous silicon thin-film transtors (TFT's) have been designed and fabricated on glass substrates. The hydrogenated amorphous silicon (a-Si:H) thin-film has been deposited by decomposing silane(SiH4) in hydorgen ambient by rf glow discharge method. Amorphous silicon nitride(a-Si:H) has been chosen as the gate dielectric material. It has been prepared by decomposing the mixed gas of silane(SiH4) and ammonia(NH3). The electrical properties and performance characteristics of the thin-film transistrs have been measured and compared with the requirements for the switching elements in liquid crystal flat panel display. The results show that liquid crystal flat panel displays can be fabricated using the thin-film transistors described in this paper.

• 한국초전도ㆍ저온공학회논문지
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• 제20권4호
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• pp.20-25
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• 2018

Niobium nitride (NbN) superconducting thin films with the thickness of 100 and 400 nm have been deposited on the surfaces of silicon oxide/silicon substrates using a sputtering method. Their superconducting properties have been evaluated in terms of the transition temperature, critical magnetic field, and critical current density. In addition, the NbN films were patterned in a line with a width of $10{\mu}m$ by a reactive ion etching (RIE) process for their characterization. This study proves the applicability of the standard complementary metal-oxide-semiconductor (CMOS) process in the fabrication of superconducting thin films without considerable degradation of superconducting properties.

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• 전자공학회논문지A
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• 제29A권10호
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• pp.35-41
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• 1992

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.