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http://dx.doi.org/10.4313/TEEM.2008.9.6.231

Hydrogen and Alkali Ion Sensing Properties of Ion Implanted Silicon Nitride Thin Film  

Park, Gu-Bum (Department of Electrical Engineering, Yuhan College)
Publication Information
Transactions on Electrical and Electronic Materials / v.9, no.6, 2008 , pp. 231-236 More about this Journal
Abstract
B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.
Keywords
Silicon nitride; Ion implantation; Ion sensitivity; ISFET (Ion sensitive field effect transistor);
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Times Cited By KSCI : 1  (Citation Analysis)
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