Fig. 1. Temperature dependence curves of normalized resistance for different NbN film thicknesses. The inset data shows the values of critical temperature, T90% , and T10%. These are defined as the values at R(T90%) = 0.9R(20 K), and R(T10%) = 0.1R(20 K), respectively.
Fig. 2. Superconducting properties of NbN-patterned film with a thickness of 400 nm. (a) Temperature dependence of resistance at different magnetic fields. The inset image shows a patterned film with dimensions of 10 μm (width) × 1 cm (length) × 400 nm (thickness). (b) Magnetic field dependence of resistance at different temperatures. (c) H-T phase diagram for a 400nm thick NbN film. The two values of critical magnetic field, H90% and H10%, are defined as the values at R(H90%, T) = 0.9R(20 K) and R(H10%, T) = 0.1R(20 K), respectively.
Fig. 3. Superconducting properties of NbN-patterned film with a thickness of 100 nm. (a) Resistance as a function of temperature at different magnetic fields. The inset shows the optic image of a patterned film with 10 μm (width) × 1 cm (length) × 100 nm (thickness). (b) Magnetic field dependence of resistance at different temperatures. (c) H-T phase diagram for a 100nm thick NbN film. The same definition as Fig.2 is used for critical magnetic fields.
Fig. 4. Critical current of NbN-patterned film with a thickness of 400 nm. I–V characteristics at (a) various temperatures and (b) various magnetic fields. The critical current as a function of (c) temperature and (d) magnetic field. The critical current is defined as the value where the voltage becomes 5μV.
Fig. 5. Critical current of NbN-patterned film with a 100 nm thickness. I–V characteristics under (a) various temperatures and (b) various magnetic fields, respectively. The dependence of critical current on (c) temperature and (d) magnetic field, respectively.
TABLE 1 COMPARISON OF CRITICAL TEMPERATURE OF NBN THIN FILMS UNDER VARIOUS DEPOSITION CONDITIONS.
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