• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.7-17
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• 2010

In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlines. They are accessed by totally new read and write method which results in low operating power dissipation in the nature. Moreover, the design reduces the leakage current in the memory cells. The proposed SRAM has been demonstrated through 16-kbit test chip fabricated in a 0.18-${\mu}m$ CMOS process. It shows 17.5 ns access at 1.8-V supply while consuming dynamic power of $87.6\;{\mu}W/MHz$ (for read cycle) and $70.2\;{\mu}W/MHz$ (for write cycle). Compared with those of the conventional 6-transistor SRAM, it exhibits the power reduction of 30 % (read) and 42 % (write) respectively. Silicon measurement also confirms that the proposed SRAM achieves nearly 64 % reduction in the total standby power dissipation. This novel SRAM might be effective in realizing low-power embedded memory in future mobile applications.

• Journal of the Korean Applied Science and Technology
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• v.27 no.2
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• pp.137-143
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• 2010

Oxide semiconductors Thin-film transistors are an exemplified one owing to its excellent ambient stability and optical transparency. In particular zinc oxide (ZnO) has been reported because It has stability in air, a high electron mobility, transparency and low light sensitivity, compared to any other materials. For this reasons, ZnO TFTs have been studied actively. Furthermore, we expected that would be satisfy the demands of flexible display in new generation. In order to do that, ZnO TFTs must be fabricated that flexible substrate can sustain operating temperature. So, In this paper we have studied low-temperature process of zinc oxide(ZnO) thin-film transistors (TFTs) based on silicon nitride ($SiN_x$)/cross-linked poly-vinylphenol (C-PVP) as gate dielectric. TFTs based on oxide fabricated by Low-temperature process were similar to electrical characteristics in comparison to conventional TFTs. These results were in comparison to device with $SiN_x$/low-temperature C-PVP or $SiN_x$/conventional C-PVP. The ZnO TFTs fabricated by low-temperature process exhibited a field-effect mobility of $0.205\;cm^2/Vs$, a thresholdvoltage of 13.56 V and an on/off ratio of $5.73{\times}10^6$. As a result, We applied experimental for flexible PET substrate and showed that can be used to ZnO TFTs for flexible application.

• Analytical Science and Technology
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• v.8 no.1
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• pp.63-68
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• 1995

For the preparation of pH-selectrode, tribenzylamine, polyvinylchloride, dioctylphthalate, sodium tetraphenylborate and tetrahydrofuran were mixed with 0.02, 0.62, 1.34, 0.02g and 10ml respectively, and added 1g of acetylene black, graphite, silicon carbide or tungsten carbide respectively to improve electric conductivity. The selectrodes of seven kinds were shown linear to hydrogen ion in the range of pH 2 and 9. The best electric conductor for preparation of pH-selectrode based on tribenzylamine as neutral carrier was acetylene black and responded potential of the selectrode to hydrogen ion was shown the values near to theoretical Nernstian slope at $20^{\circ}C$. The interfering effects of the selectrode on hydrogen ion in the presence of alkali and alkaline earth metal ions were shown the better results with less error than glass electrode. The reproducibility and stability were good for use as a selectrode, especially in the presence of fluoride ion.

• Journal of the Korean Society of Radiology
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• v.1 no.1
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• pp.11-16
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• 2007

In this study, we have performed contrast-detail analysis for an amorphous selenium(a-Se) based digital X-ray imaging system by using a contrast-detail phantom(CDRAD 2.0) to test its low contrast performance. The X-ray imaging system utilizes an 500-mm-thick a-Se semiconductor X-ray absorber coated over an amorphous silicon(a-Si) TFT(thin-film transistor) detector matrix with a $139mm{\times}139mm$ pixel size and a $46.7cm{\times}46.7cm$ active area. In the measurement of contrast-detail curves we first acquired X-ray images of the CDRAD 2.0 phantom at given test conditions(i.e., 40, 50, 60, 70, 80 kVp, and 16 mA.s), and then evaluated the contrast-detail characteristics of the imaging system from each phantom image by using an image quality factor called the image-quality-figure-inverse(IQFinv). The IQFinv values for the imaging system gradually improved with the photon fluence, indicating the improvement of image visibility: 24.4, 35.3, 39.2, 41.5, and 43.4 at photon fluences of $1.8{\times}105$, $5.9{\times}105$, $11.3{\times}105$, $19.4{\times}105$, and $29.4{\times}105$ photons/$mm^2$, respectively.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.73-77
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• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.43-49
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• 1999

Gas pressure sintered silicon nitride based composites with 0~5wt% $\beta$-Si3N4 whiskers were prepared. The whiskers were unidirectionally oriented by a modified tape casting technqiue and green bodies with various microstructure were formed by changing stacking sequences of sheets cut from the tape. Orientations of the large elongated grains of the sample after gas pressure sintering were the same as the those of the whiskers of green body, and the sintering shrinkage and mechanical properties of sintered sample were consistent with the microstructural characteristics. In case of unidirectional samples, the sintering shrinkage normal to whisker alignment direction was larger than that parallel to the direction. The shrinkage difference inceaed as the whiskercontent increaed. As whisker content increaed, the crack length normal to and parallel to tape casting direction became shorter and larger, respectively. Although the grain size increased by th whisker addition, the flexural strength of unidirectional samples was not lower than that of smaple without the whisker. In case of crossplied and 45$^{\circ}$rotated samples, the anisotropy of mechanical preoperties disappeared.

• Korean Journal of Optics and Photonics
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• v.24 no.4
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• pp.184-188
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• 2013

Two types of polymer-based optical splitters with $200{\mu}m$ large core are presented for optical multimode networks, such as smart home networks, intelligent automotive networks, etc. Optical splitters that have 1:1 symmetric and 9:1 asymmetric structure were fabricated by a ultra violet(UV)-imprint technology using a deep etched Si(silicon) master by the Bosch process. In this paper, we successfully fabricated the symmetric and asymmetric optical splitters with suitable optical network applications.

• Resources Recycling
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• v.18 no.2
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• pp.39-50
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• 2009

Portland cement production is under critical review due to high amount of $CO_2$ gas released to the atmosphere. Attempts to increase the utilization of fly ash, a by-products from thermal power plant to partially replace the cement in concrete are gathering momentum. But most of fly ash is currently dumped in landfills, thus creating a threat to the environment. Many researches on alkali-activated concrete that does not need the presence of cement as a binder have been carried out recently. Instead, the source of material such as fly ash, that are rich in Silicon(Si) and Aluminium(Al), are activated by alkaline liquids to produce the binder. Hence concrete with no cement is effective in the reduction of $CO_2$ gas. In this study, we investigated the influence of the compressive strength of mortar on alkaline activator and curing condition in order to develop cementless fly ash based alkali-activated concrete. In view of the results, we found out that it was possible for us to make alkali-activated mortar with 70MPa at the age of 28days by using alkaline activator manufactured as 1:1 the mass ratio of 9M NaOH and sodium silicate and applying the atmospheric curing after high temperature at $60^{\circ}C$ for 48hours.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.44-45
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• 2010

We are currently conducting studies on culturing and biocompatibility assessment of various cells such as neural stem cells and induced pluripotent stem cells(IPS cells) on carbon nanotube (CNT), on nerve regeneration electrodes, and on silicon wafers with a focus on developing nerve integrated CNT based bio devices for interfacing with living organisms, in order to develop brain-machine interfaces (BMI). In addition, we are carried out the chemical modification of carbon nanotube (mainly SWCNTs)-based bio-nanosensors by the plasma ion irradiation (plasma activation) method, and provide a characteristic evaluation of a bio-nanosensor using bovine serum albumin (BSA)/anti-BSA binding and oligonucleotide hybridization. On the other hand, the researches in the case of "novel plasma" have been widely conducted in the fields of chemistry, solid physics, and nanomaterial science. From the above-mentioned background, we are conducting basic experiments on direct irradiation of body tissues and cells using a micro-spot atmospheric pressure plasma source. The device is a coaxial structure having a tungsten wire installed inside a glass capillary, and a grounded ring electrode wrapped on the outside. The conditions of plasma generation are as follows: applied voltage: 5-9 kV, frequency: 1-3 kHz, helium (He) gas flow: 1-1.5 L/min, and plasma irradiation time: 1-300 sec. The experiment was conducted by preparing a culture medium containing mouse fibroblasts (NIH3T3) on a culture dish. A culture dish irradiated with plasma was introduced into a $CO_2$-incubator. The small animals used in the experiment involving plasma irradiation into living tissue were rat, rabbit, and pick and are deeply anesthetized with the gas anesthesia. According to the dependency of cell numbers against the plasma irradiation time, when only He gas was flowed, the growth of cells was inhibited as the floatation of cells caused by gas agitation inside the culture was promoted. On the other hand, there was no floatation of cells and healthy growth was observed when plasma was irradiated. Furthermore, in an experiment testing the effects of plasma irradiation on rats that were artificially given burn wounds, no evidence of electric shock injuries was found in the irradiated areas. In fact, the observed evidence of healing and improvements of the burn wounds suggested the presence of healing effects due to the growth factors in the tissues. Therefore, it appears that the interaction due to ion/radicalcollisions causes a substantial effect on the proliferation of growth factors such as epidermal growth factor (EGF), nerve growth factor (NGF), and transforming growth factor (TGF) that are present in the cells.

• Applied Chemistry for Engineering
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• v.25 no.1
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• pp.1-13
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• 2014

Lithium ion batteries (LIBs) are the state-of-the-art technology among electrochemical energy storage and conversion cells, and are still considered the most attractive class of battery in the future due to their high specific energy density, high efficiency, and long cycle life. Rapid development of power-hungry commercial electronics and large-scale energy storage applications (e.g. off-peak electrical energy storage), however, requires novel anode materials that have higher energy densities to replace conventional graphite electrodes. Germanium (Ge) and silicon (Si) are thought to be ideal prospect candidates for next generation LIB anodes due to their extremely high theoretical energy capacities. For instance, Ge offers relatively lower volume change during cycling, better Li insertion/extraction kinetics, and higher electronic conductivity than Si. In this focused review, we briefly describe the basic concepts of LIBs and then look at the characteristics of ideal anode materials that can provide greatly improved electrochemical performance, including high capacity, better cycling behavior, and rate capability. We then discuss how, in the future, Ge anode materials (Ge and Ge oxides, Ge-carbon composites, and other Ge-based composites) could increase the capacity of today's Li batteries. In recent years, considerable efforts have been made to fulfill the requirements of excellent anode materials, especially using these materials at the nanoscale. This article shall serve as a handy reference, as well as starting point, for future research related to high capacity LIB anodes, especially based on semiconductor Ge and Si.