• Title/Summary/Keyword: Silicon valley

Search Result 46, Processing Time 0.02 seconds

The Strategic Impact of the Summer Palace on China′s ″Silicon Valley″

  • Gao, Da-wei
    • Journal of the Korean Institute of Landscape Architecture International Edition
    • /
    • no.1
    • /
    • pp.120-126
    • /
    • 2001
  • The Haidian Garden of Zhongguancun Science and Technology Zone is an area with high intellectual intensity. It is therefore known as China's Silicon Valley. The Summer Palace, a World Heritage Site, sits in the northwest part of it. 250 years ago, the construction of imperial gardens in this area, including the Summer Palace, gave birth to the appearance and prosperity of the town of Haidian. This will also provide various opportunities for the growth of the science and technology. Today the green space, the cultural and ecological environment of the Summer Palace, and its 3-kilometer buffer zone are becoming one important strategic factor for the Haidian Garden to attract talents, improve international competitiveness and realize sustainable development. How to taking advantage of the favorable resources, to achieve balance between protection of the environment around the Summer Palace and urban development, will be of great importance in the future plans of the science and technology.

  • PDF

What Is to Be Done with Creative Ecosystem Based on Creative Economic Innovation Center: An Implication through Comparing Silicon Valley and Kyoto Eco-system (창조경제혁신센터형 창조생태계 어떻게 할 것인가?: 실리콘 밸리 및 교토생태계와의 비교를 통한 시사점)

  • Lee, Hong
    • Journal of Technology Innovation
    • /
    • v.25 no.4
    • /
    • pp.145-164
    • /
    • 2017
  • This research targeted discussions on re-utilization of Korean creative economic innovation center. It is meaningless to simply discuss its re-organization. The focus of this study was to find a way that transforms it into totally new one. The study followed several steps. First, it delineated criteria from existing literature for comparing creative eco-system of Silicon valley, Kyoto eco-system and eco-system based on Korean creative economic innovation center. Second, it compared the three eco-systems in details. Third, it discussed a direction for transforming eco-system based on Korean creative economic innovation center. It was suggested that the Kyoto eco-system can be a role model. It was also suggested that governmental role should be changed from controller to facilitatior which stimulates regulation relaxations and helps to establish market formation.

fabrication of the Large Area Silicon Mirror for Slim Optical Pickup Using Micromachining Technology (미세가공기술을 이용한 초소형 광픽업용 대면적 실리콘 미러 제작)

  • Park Sung-Jun;Lee Sung-Jun;Choi Seog-Moon;Lee Sang-Jo
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.23 no.1 s.178
    • /
    • pp.89-96
    • /
    • 2006
  • In this study, fabrication of the large area silicon mirror is accomplished by anisotropic wet etching using micromachining technology for implementation of integrated slim optical pickup and the process condition is also established for improving the mirror surface roughness. Until now, few results have been reported about the production of highly stepped $9.74^{\circ}$ off-axis-cut silicon wafers using wet etching. In addition rough surface of the mirror is achieved in case of tong etching time. Hence a novel method called magnetorheolocal finishing is applied to enhance the surface quality of the mirror plane. Finally, areal peak to valley surface roughness of mirror plane is reduced about 100nm in large area of $mm^2$ and it is applicable to optical pickup using infrared wavelength.

Dependency of Phonon-limited Electron Mobility on Si Thickness in Strained SGOI (Silicon Germanium on Insulator) n-MOSFET (Strained SGOI n-MOSFET에서의 phonon-limited전자이동도의 Si두께 의존성)

  • Shim Tae-Hun;Park Jea-Gun
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.42 no.9 s.339
    • /
    • pp.9-18
    • /
    • 2005
  • To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

Technology Odyssey: An Introductory Engineering Course based on Soft Engineering

  • Yoon, Joongsun
    • Journal of Engineering Education Research
    • /
    • v.23 no.4
    • /
    • pp.22-27
    • /
    • 2020
  • We propose and execute an introductory engineering course for investigating the history of technology and the philosophy of technology. Soft engineering, to explore proper technology and appropriate ways of exercising engineering, has been explored. Creative cases for technology are presented following the most creative, successful periods-the ancient greece, the Renaissance and Silicon Valley era. Ancient greek technology has been investigated in terms of "techne" with the origin of technology and/or art, and their equivalences. The Renaissance period has been investigated in terms of "Uomo universale (polymath)" with Firenze geniuses. The successful drives for the Silicon Valley creativeness have been investigated following "entrepreneurship". To overcome the difficult goal to grasp course subject-technology issues, we take a stance as a tourist guide and tourists utilizing offline onsite experiences and online informations. Categorized course materials are surveyed at the beginning of each period and presented following the preferences of the students to maintain the students' interests. Team efforts including group discussions and project executions have been encouraged to seek the aspects of creativeness and/or technology. This paper summarizes the 3-lecture experiences over 2 years for Korean students and/or foreign students conducted at Pusan National University.

Integrated Study on the Factors Influencing Sustainable Innovation Cluster of Pangyo Techno Valley (판교테크노벨리의 지속가능한 혁신 클러스터 영향요인에 관한 통합연구)

  • Park, Jeong Sun;Park, Sang Hyeok;Hong, Sung Sin
    • Asia-Pacific Journal of Business Venturing and Entrepreneurship
    • /
    • v.15 no.1
    • /
    • pp.71-94
    • /
    • 2020
  • Korea's innovation cluster policy has been implemented since 2005 with the goal of balanced regional development. The purpose of this study is to investigate the factors affecting the sustainability of innovative cluster tenants by using Pangyo Techno Valley as an example. Pangyo Techno Valley was established under the leadership of the local government (Gyeonggi-do) rather than the central government and it is called "Silicon Valley of Korea" and "Asia Silicon Valley" and is becoming more representative. The growing number of companies in Pangyo Techno Valley decreased in 2017 compared to 2016. This is because Pangyo Techno Valley's business ecosystem will change from 2019. In this paper, quantitative and qualitative studies were conducted to investigate the influencing factors. Quantitative research was conducted based on the survey and qualitative research was applied through interviews. The quantitative research examined the factors affecting the sustainability of Pangyo Techno Valley, and the qualitative research examined the specific reasons and additional factors for the quantitative research results. The quantitative results showed that factors affecting sustainability in terms of changes in corporate internal conditions, human and physical infrastructure, cooperation and synergy, and occupancy patterns. The specific reason for the impact appeared in the qualitative research process. The support category of local governments did not show any significant factors in quantitative research. In addition, qualitative research suggested 'Good image of Pangyo Techno Valley' as the category that has the greatest impact on sustainability. It is shown that companies are passive and expect the role of local governments in activating cooperation network in Pangyo Techno Valley. In this paper, based on the results of the study, Pangyo Techno Valley is presented with a realistic plan based on real estate issues and an ideal plan with a long-term perspective.

Fabrication of Large Area Silicon Mirror for Integrated Optical Pickup (집적형 광 픽업용 대면적 실리콘 미러 제작)

  • Kim, Hae-Sung;Lee, Myung-Bok;Sohn, Jin-Seung;Suh, Sung-Dong;Cho, Eun-Hyoung
    • Transactions of the Society of Information Storage Systems
    • /
    • v.1 no.2
    • /
    • pp.182-187
    • /
    • 2005
  • A large area micro mirror is an optical element that functions as changing an optical path by reflection in integrated optical system. We fabricated the large area silicon mirror by anisotropic etching using MEMS for implementation of integrated optical pickup. In this work, we report the optimum conditions to better fabricate and design, greatly improve mirror surface quality. To obtain mirror surface of $45^{\circ},\;9.74^{\circ}$ off-axis silicon wafer from (100) plane was used in etching condition of $80^{\circ}C$ with 40wt.% KOH solution. After wet etching, polishing process by MR fluid was applied to mirror surface for reduction of roughness. In the next step, after polymer coating on the polished Si wafer, the Si mirror was fabricated by UV curing using a trapezoid bar-type way structure. Finally, we obtained peak to valley roughness about 50 nm in large area of $mm^2$ and it is applicable to optical pickup using blu-ray wavelength as well as infrared wavelength.

  • PDF

Influence of Inverted Pyramidal Surface on Crystalline Silicon Solar Cells (결정질 실리콘 태양전지 표면 역 피라미드 구조의 특성 분석)

  • Yang, Jeewoong;Bae, Soohyun;Park, Se Jin;Hyun, Ji Yeon;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Current Photovoltaic Research
    • /
    • v.6 no.3
    • /
    • pp.86-90
    • /
    • 2018
  • To generate more current in crystalline silicon solar cells, surface texturing is adopted by reducing the surface reflection. Conventionally, random pyramid texturing by the wet chemical process is used for surface texturing in crystalline silicon solar cell. To achieve higher efficiency of solar cells, well ordered inverted pyramid texturing was introduced. Although its complicated process, superior properties such as lower reflectance and recombination velocity can be achieved by optimizing the process. In this study, we investigated optical and passivation properties of inverted pyramid texture. Lifetime, implied-Voc and reflectance were measured with different width and size of the texture. Also, effects of chemical rounding at the valley of the pyramid were observed.

Fabrication of Large Area Si Mirror for Integrated Optical Pickup by using Magnetorheological Finishing (MRF 공정을 이용한 집적형 광 픽업용 대면적 실리콘 미러 제작)

  • Park S.J.;Lee S.J.;Choi S.M.;Min B.K.;Lee S.J.
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2005.06a
    • /
    • pp.1522-1526
    • /
    • 2005
  • In this study, the fabrication of large area silicon mirror is accomplished by anisotropic etching using MEMS for implementation of integrated optical pickup and the process condition is also established for improving the mirror surface roughness. Until now, few results have been reported about the production of highly stepped $9.74^{\circ}$ off-axis-cut silicon wafer using wet etching. In addition rough surface of the mirror is achieved in case of long etching time. Hence a novel method called magnetorheolocal finishing is introduced to enhancing the surface quality of the mirror plane. Finally, areal peak to valley surface roughness of mirror plane is reduced about 100nm in large area of $mm^2$ and it is applicable to optical pickup using infrared wavelength.

  • PDF