• Electronics and Telecommunications Trends
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• v.20 no.5 s.95
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• pp.84-92
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• 2005

실리콘 포토닉스 기술은 차세대 실리콘 기술로서 optoelectronic integrated circuit을 위한 실리콘 기반 광기술에 대한 것이다. 본 고에서는 이러한 실리콘 포토닉스 기술을 이용한 단일 집적화에 있어서 응용과 문제점 및 연구개발 동향에 대해 알아본다. 특히, 세부 기술들에 대한 현재의 기술적 수준을 단일 집적화 측면에서 검토하였으며, 가장 큰 문제점으로 인식되는 실리콘 발광원의 국내외 기술 현황을 살펴보았다.

• Journal of the Optical Society of Korea
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• v.17 no.5
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• pp.433-440
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• 2013

We present an experimental and numerical study of spectral profiles of effective group indices of hydrogenated amorphous silicon (a-Si:H) waveguides and of their chromatic-dispersion effect on the four-wave-mixing (FWM) signal generation. The a-Si:H waveguides of 220-nm thickness and three different widths of 400, 450 and 500 nm were fabricated by using the conventional CMOS device processes on a $2-{\mu}m$ thick $SiO_2$ bottom layer deposited on 8-inch Si wafers. Mach-Zehnder interferometers (MZIs) were formed with the a-Si:H waveguides, and used for precise measurement of the effective group indices and thus for determination of the spectral profile of the waveguides' chromatic dispersion. The wavelength ranges for the FWM-signal generation were about 45, 75 and 55 nm for the 400-, 450- and 500-nm-wide waveguides, respectively, at the pump wavelength of 1532 nm. A widest wavelength range for the efficient FWM process was observed with the 450-nm-wide waveguide having a zero-dispersion near the pump wavelength.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.149-154
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• 2007

Bragg reflecting waveguide devices have been fabricated on a flexible polymer substrate utilizing a post lift-off process which could Provide excellent uniformity of grating Patterns on Plastic film. The 510 m Period Bragg grating pattern is made by two methods. In the first sample the grating is fabricated by exposing the laser interference pattern on a photoresist, and then it is inscribed by $O_2$ plasma etching. The grating pattern of the second sample is formed by a PDMS soft mold imprinting process. The selective adhesion property of SU-8 material for Au and Si surfaces is utilized to prepare a 100-mm thick plastic substrate. Single mode waveguide is fabricated on the plastic substrate using polymer materials with refractive indices of 1.540 and 1.430 for the core and the cladding layers, respectively. The Bragg grating on Plastic substrate does not show any degradation in its spectral response compared to the reference sample made on a silicon wafer.

• Korean Journal of Optics and Photonics
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• v.31 no.5
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• pp.213-217
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• 2020

In this study we report a wet-etching-based fabrication method for adiabatic optical-fiber tapers (OFTs), and describe their adiabaticity and HE₁₁ mode evolution at a wavelength of 1550 nm. The profile of the fabricated system satisfies the adiabaticity properties well, and the far-field pattern from the etched OFT shows that the fundamental HE₁₁ mode is maintained without a higher-order mode coupling throughout the tapers. In addition, the measured far-field pattern agrees well with the simulated result. The proposed adiabatic OFTs can be applied to a number of photonic applications, especially fiber-chip packages. Based on the fabricated adiabatic OFT structures, the optical transmission to the inversely tapered silicon waveguide shows large spatial-dimensional tolerances for 1 dB excess loss of ~60 ㎛ (silicon waveguide angle of 1°) and insertion loss of less than 0.4 dB (silicon waveguide angle of 4°), from the numerical simulation. The proposed adiabatic coupler shows the ultrabroadband coupling efficiency over the O- and C-bands.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.83-93
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• 2014

It is a widespread concern that electrical interconnection based network-on-chip (NoC) will ultimately face the limitation in communication bandwidth, transmission latency and power consumption in the near future. With the development of silicon photonics technology, a hybrid optical network-on-chip (HONoC) which embraces both electrical- and optical interconnect, is emerging as a promising solution to overcome these problems. Today's leading edge systems-on-chips (SoCs) comprise heterogeneous many-cores for higher energy efficiency, therefore, extended study beyond regular topology based NoC is required. This paper proposes an energy and latency optimization topology design technique for HONoC taking into account the traffic characteristics of target applications. The proposed technique is implemented with genetic algorithm and simulation results show the reduction by 13.84% in power loss and 28.14% in average latency, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.3
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• pp.311-317
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• 2019

We first numerically analyzed the characteristics of a silicon-based grating structure for beam steering. The analysis includes the basic principle of the grating structure according to the wavelength, peak radiation angle, radiation efficiency, and full-width at the half maximum(FWHM) of the radiation angle. Based on the analysis, we propose a silicon-based grating structure integrated with distributed Bragg reflector(DBR) to obtain a high radiation efficiency and narrow beam width simultaneously. We performed the numerical optimization of the radiation efficiency and FWHM of the radiation angle according to the DBR position. By the design optimization using the proposed grating structure compatible with the complementary metal-oxide semiconductor(CMOS) process, we achieved a maximum radiation efficiency of 87.1% and minimum FWHM of radiation angle of $4.68^{\circ}$.

• Current Optics and Photonics
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• v.3 no.6
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• pp.510-515
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• 2019

In this paper, we introduce a 1.3-㎛ 25-GHz waveguide-integrated vertical PIN type Ge-on-Si photodetector fabricated using a multi-project wafers service based on fringing field analysis in the depletion region. In general, 1.3-㎛ photodetectors fabricated using a commercial foundry service can achieve limited bandwidths because a significant amount of photo-generated carriers are located within a few microns from the input along the device length, and they are influenced by the fringing field, leading to a longer transit time. To estimate the response time, we calculate the fringing field in that region and the transit time using the drift velocity caused by the field. Finally, we compare the estimated value with the measured one. The photodetector fabricated has a bandwidth of 20.75 GHz at -1 V with an estimation error of <3 GHz and dark current and responsivity of 110 nA and 0.704 A/W, respectively.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.652-655
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• 2006

A direct wafer bonding process necessary for GaAs-on-insulator (GOI) fabrication with high thermal annealing temperatures was studied by using PECVD oxides between gallium arsenide and silicon wafers. In order to apply some uniform pressure on initially-bonded wafer pairs, a graphite sample holder was used for wafer bonding. Also, a tool for measuring the tensile forces was fabricated to measure the wafer bonding strengths of both initially-bonded and thermally-annealed samples. GaAs/$SiO_2$/Si wafers with 0.5-$\mu$m-thick PECVD oxides were annealed from $100^{\circ}C\;to\;600^{\circ}C$. Maximum bonding strengths of about 84 N were obtained in the annealing temperature range of $400{\sim}500^{\circ}C$. The bonded wafers were not separated up to $600^{\circ}C$. As a result, the GOI wafers with high annealing temperatures were demonstrated for the first time.

• Current Optics and Photonics
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• v.6 no.3
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• pp.323-331
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• 2022

Electro-optic modulator (EOM) takes a vital role in connecting the electric and optical fields. Here, we present a heterogeneously integrated EOM based on the lithium niobate-on-insulator (LNOI) platform. The key modulation waveguide structure is a field-enhanced slot waveguide formed by embedding silicon nanowires in a thin-film lithium niobate (LN), which is different from the previously reported LN ridge or etchless LN waveguides. Based on such slot structure, optical mode field area is reduced and enhanced electric field in the slot region can interact well with LN material with high Electro-optic (EO) coefficient. Therefore, the improvements in both aspects have positive effects on enhancing the modulation performance. From results, the corresponding EOM by adding such modulation waveguide structure achieves better performance, where the key half-wave-voltage-length product (V_𝜋L) and 3 dB EO bandwidth are 1.78 V·cm and 40 GHz under the electrode gap width of only 6 ㎛, respectively. Moreover, Lower V_𝜋L can also be achieved. With these characteristics, such field-enhanced waveguide structure could further promote the development of LNOI-based EOM.