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http://dx.doi.org/10.3740/MRSK.2006.16.10.652

Direct Bonding of GOI Wafers with High Annealing Temperatures  

Byun, Young-Tae (Photonics Research Center, Korea Institute of Science and Technology)
Kim, Sun-Ho (Photonics Research Center, Korea Institute of Science and Technology)
Publication Information
Korean Journal of Materials Research / v.16, no.10, 2006 , pp. 652-655 More about this Journal
Abstract
A direct wafer bonding process necessary for GaAs-on-insulator (GOI) fabrication with high thermal annealing temperatures was studied by using PECVD oxides between gallium arsenide and silicon wafers. In order to apply some uniform pressure on initially-bonded wafer pairs, a graphite sample holder was used for wafer bonding. Also, a tool for measuring the tensile forces was fabricated to measure the wafer bonding strengths of both initially-bonded and thermally-annealed samples. GaAs/$SiO_2$/Si wafers with 0.5-$\mu$m-thick PECVD oxides were annealed from $100^{\circ}C\;to\;600^{\circ}C$. Maximum bonding strengths of about 84 N were obtained in the annealing temperature range of $400{\sim}500^{\circ}C$. The bonded wafers were not separated up to $600^{\circ}C$. As a result, the GOI wafers with high annealing temperatures were demonstrated for the first time.
Keywords
GaAs-on-Insulator (GOI); Wafer direct bonding; PECVD oxide; Bonding strength;
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Times Cited By KSCI : 3  (Citation Analysis)
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1 M. Bruel, Electron. Lett., 31, 1201 (1995)   DOI   ScienceOn
2 Y. T. Byun, H. K. Kim, T. G. Kim, S. H. Kim, S. K. Han and H. J. Woo, in Proceedings of the Optical Society of Korea Annual Meeting 2004 (Chonnam National University, Korea, 12-13 February 2004), pp.316-317
3 Y. T. Byun, J. H. Kim, S. L. and S. H. Kim, Korea, patent number 10-0507331, 2005
4 H. Wada and T. Kamijoh, Jpn. J. Appl. Phys. 33, Part 1, No. 9A, 4878 (1994)   DOI
5 Shinpei Ogawa, Masahiro Imada and Susumu Nodab, Appl. Phys. Lett., 82, 3406 (2003)   DOI   ScienceOn
6 Q-Y Tong, U.M. Gosele, 'Semiconductor Wafer Bonding: Science and Technology' , John Wiley & Sons, Inc, pp.205 (1999)
7 M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K.Uomi, and A. Takai, IEEE J Quantum Electron., 29, 2088 (1993)   DOI   ScienceOn
8 H. K. Kim, T. G. Kim, S. H. Kim, Y. T. Byun, S. K. Han and H. J. Woo, in Proceedings of the Optical Society of Korea Annual Meeting 2004 (Chonnam National University, Korea, 12-13 February 2004), pp.314-315
9 Y. T. Byun and H. K. Kim, Sae Muli, 46, 297 (2003)
10 Y. T. Byun, Y. M. Jhon and S. H. Kim, Sae Muli, 51, 254 (2005)
11 J. K. Park, Y. T. Byun and J. Park, Sae Muli, 51, 322 (2005)
12 J. Binsma, P. Thijs, T. VanDongen, E. Jansen, A. Staring, G. Van-DenHoven, and L. Tiemeijer, IEICE Trans. Electron., E80-C, 675 (1997)
13 P. D. Han and J. Zou, Appl, Phys. Lett., 72, 2424 (1998)   DOI   ScienceOn